DE69317800D1 - Verfahren zur Herstellung einer Halbleiteranordnung - Google Patents
Verfahren zur Herstellung einer HalbleiteranordnungInfo
- Publication number
- DE69317800D1 DE69317800D1 DE69317800T DE69317800T DE69317800D1 DE 69317800 D1 DE69317800 D1 DE 69317800D1 DE 69317800 T DE69317800 T DE 69317800T DE 69317800 T DE69317800 T DE 69317800T DE 69317800 D1 DE69317800 D1 DE 69317800D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/78654—Monocrystalline silicon transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76275—Vertical isolation by bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76281—Lateral isolation by selective oxidation of silicon
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP04035729A JP3114894B2 (ja) | 1992-01-28 | 1992-01-28 | 絶縁ゲート型電界効果トランジスタの製造方法、半導体装置の製造方法及び絶縁ゲート型電界効果トランジスタ |
JP4049492A JPH05218326A (ja) | 1992-01-31 | 1992-01-31 | 半導体装置及び液晶表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69317800D1 true DE69317800D1 (de) | 1998-05-14 |
DE69317800T2 DE69317800T2 (de) | 1998-09-03 |
Family
ID=26374720
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69332960T Expired - Fee Related DE69332960T2 (de) | 1992-01-28 | 1993-01-27 | Halbleiteranordnung |
DE69317800T Expired - Fee Related DE69317800T2 (de) | 1992-01-28 | 1993-01-27 | Verfahren zur Herstellung einer Halbleiteranordnung |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69332960T Expired - Fee Related DE69332960T2 (de) | 1992-01-28 | 1993-01-27 | Halbleiteranordnung |
Country Status (4)
Country | Link |
---|---|
US (1) | US6096582A (de) |
EP (2) | EP0553775B1 (de) |
DE (2) | DE69332960T2 (de) |
HK (1) | HK1004843A1 (de) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06314790A (ja) * | 1993-04-23 | 1994-11-08 | Internatl Business Mach Corp <Ibm> | 半導体デバイス及び半導体デバイス製造方法 |
US7081938B1 (en) | 1993-12-03 | 2006-07-25 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and method for manufacturing the same |
US6747627B1 (en) | 1994-04-22 | 2004-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Redundancy shift register circuit for driver circuit in active matrix type liquid crystal display device |
JP3402400B2 (ja) | 1994-04-22 | 2003-05-06 | 株式会社半導体エネルギー研究所 | 半導体集積回路の作製方法 |
JP3253808B2 (ja) * | 1994-07-07 | 2002-02-04 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
US5726720A (en) * | 1995-03-06 | 1998-03-10 | Canon Kabushiki Kaisha | Liquid crystal display apparatus in which an insulating layer between the source and substrate is thicker than the insulating layer between the drain and substrate |
TW335503B (en) | 1996-02-23 | 1998-07-01 | Semiconductor Energy Lab Kk | Semiconductor thin film and manufacturing method and semiconductor device and its manufacturing method |
TW374196B (en) * | 1996-02-23 | 1999-11-11 | Semiconductor Energy Lab Co Ltd | Semiconductor thin film and method for manufacturing the same and semiconductor device and method for manufacturing the same |
EP0844661A1 (de) * | 1996-11-20 | 1998-05-27 | STMicroelectronics S.r.l. | Silicium Gate CMOS-Transistore und Verfahren zu ihrer Herstellung |
KR100238234B1 (ko) * | 1997-03-20 | 2000-01-15 | 윤종용 | 반도체소자용 인-시튜 세정장치 및 그를 이용한 반도체 소자의 세정방법 |
US6686623B2 (en) | 1997-11-18 | 2004-02-03 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile memory and electronic apparatus |
JP2000012864A (ja) | 1998-06-22 | 2000-01-14 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
US6271101B1 (en) | 1998-07-29 | 2001-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Process for production of SOI substrate and process for production of semiconductor device |
JP4476390B2 (ja) | 1998-09-04 | 2010-06-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
WO2000016153A1 (fr) * | 1998-09-10 | 2000-03-23 | Seiko Epson Corporation | Substrat pour panneau a cristaux liquides, panneau a cristaux liquides, appareil electronique comprenant ce panneau, et procede de fabrication d'un substrat pour panneau a cristaux liquides |
US6677613B1 (en) * | 1999-03-03 | 2004-01-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
US6876145B1 (en) * | 1999-09-30 | 2005-04-05 | Semiconductor Energy Laboratory Co., Ltd. | Organic electroluminescent display device |
US6261876B1 (en) * | 1999-11-04 | 2001-07-17 | International Business Machines Corporation | Planar mixed SOI-bulk substrate for microelectronic applications |
JP3425603B2 (ja) * | 2000-01-28 | 2003-07-14 | 独立行政法人産業技術総合研究所 | 電界効果トランジスタの製造方法 |
US6613643B1 (en) | 2000-01-28 | 2003-09-02 | Advanced Micro Devices, Inc. | Structure, and a method of realizing, for efficient heat removal on SOI |
US6399427B1 (en) * | 2000-02-24 | 2002-06-04 | Advanced Micro Devices, Inc. | Formation of ultra-thin active device area on semiconductor on insulator (SOI) substrate |
US7101772B2 (en) * | 2000-12-30 | 2006-09-05 | Texas Instruments Incorporated | Means for forming SOI |
US6759282B2 (en) * | 2001-06-12 | 2004-07-06 | International Business Machines Corporation | Method and structure for buried circuits and devices |
US6737332B1 (en) * | 2002-03-28 | 2004-05-18 | Advanced Micro Devices, Inc. | Semiconductor device formed over a multiple thickness buried oxide layer, and methods of making same |
US7611928B2 (en) | 2002-04-16 | 2009-11-03 | Infineon Technologies Ag | Method for producing a substrate |
DE50312772D1 (de) * | 2002-04-16 | 2010-07-15 | Infineon Technologies Ag | Substrat und verfahren zum herstellen eines substrats |
US7078773B2 (en) * | 2002-12-23 | 2006-07-18 | International Business Machines Corporation | Nitride-encapsulated FET (NNCFET) |
FR2860919B1 (fr) * | 2003-10-09 | 2009-09-11 | St Microelectronics Sa | Structures et procedes de fabrication de regions semiconductrices sur isolant |
JP4420196B2 (ja) * | 2003-12-12 | 2010-02-24 | 三菱電機株式会社 | 誘電体分離型半導体装置およびその製造方法 |
WO2006043687A1 (en) * | 2004-10-22 | 2006-04-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
DE102005027369A1 (de) * | 2005-06-14 | 2006-12-28 | Atmel Germany Gmbh | Integrierter Schaltkreis und Verfahren zur Herstellung eines integrierten Schaltkreises |
US8049253B2 (en) | 2007-07-11 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
KR102251817B1 (ko) | 2008-10-24 | 2021-05-12 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
US8859337B2 (en) * | 2009-12-15 | 2014-10-14 | Soitec | Thermal matching in semiconductor devices using heat distribution structures |
EP2757580A1 (de) * | 2013-01-22 | 2014-07-23 | Nxp B.V. | Bipolar-CMOS-DMOS-Prozesse |
US9570437B2 (en) | 2014-01-09 | 2017-02-14 | Nxp B.V. | Semiconductor die, integrated circuits and driver circuits, and methods of maufacturing the same |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5620370A (en) * | 1979-07-28 | 1981-02-25 | Oki Electric Ind Co Ltd | Answer system distributing-charging system |
JPS5629369A (en) * | 1979-08-17 | 1981-03-24 | Nippon Telegr & Teleph Corp <Ntt> | Insulated gate type field effect transistor |
JPS57177559A (en) * | 1981-04-24 | 1982-11-01 | Fujitsu Ltd | Semiconductor device and manufacture thereof |
JPS61125163A (ja) * | 1984-11-22 | 1986-06-12 | Agency Of Ind Science & Technol | 3次元半導体装置 |
US4829018A (en) * | 1986-06-27 | 1989-05-09 | Wahlstrom Sven E | Multilevel integrated circuits employing fused oxide layers |
JPH0824162B2 (ja) * | 1989-07-10 | 1996-03-06 | 日本電装株式会社 | 半導体装置およびその製造方法 |
JP2617798B2 (ja) * | 1989-09-22 | 1997-06-04 | 三菱電機株式会社 | 積層型半導体装置およびその製造方法 |
US5750000A (en) * | 1990-08-03 | 1998-05-12 | Canon Kabushiki Kaisha | Semiconductor member, and process for preparing same and semiconductor device formed by use of same |
CA2069038C (en) * | 1991-05-22 | 1997-08-12 | Kiyofumi Sakaguchi | Method for preparing semiconductor member |
JPH08501900A (ja) * | 1992-06-17 | 1996-02-27 | ハリス・コーポレーション | 結合ウェーハの製法 |
-
1993
- 1993-01-27 DE DE69332960T patent/DE69332960T2/de not_active Expired - Fee Related
- 1993-01-27 DE DE69317800T patent/DE69317800T2/de not_active Expired - Fee Related
- 1993-01-27 EP EP93101168A patent/EP0553775B1/de not_active Expired - Lifetime
- 1993-01-27 EP EP97111478A patent/EP0810652B1/de not_active Expired - Lifetime
-
1997
- 1997-07-23 US US08/898,992 patent/US6096582A/en not_active Expired - Fee Related
-
1998
- 1998-05-12 HK HK98104069A patent/HK1004843A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0553775B1 (de) | 1998-04-08 |
US6096582A (en) | 2000-08-01 |
EP0810652B1 (de) | 2003-05-07 |
DE69332960T2 (de) | 2004-05-13 |
EP0810652A2 (de) | 1997-12-03 |
DE69317800T2 (de) | 1998-09-03 |
EP0810652A3 (de) | 1998-05-20 |
DE69332960D1 (de) | 2003-06-12 |
EP0553775A1 (de) | 1993-08-04 |
HK1004843A1 (en) | 1998-12-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |