JPS56158431A - Forming of oxidized film of semiconductor element for electric power - Google Patents

Forming of oxidized film of semiconductor element for electric power

Info

Publication number
JPS56158431A
JPS56158431A JP6295080A JP6295080A JPS56158431A JP S56158431 A JPS56158431 A JP S56158431A JP 6295080 A JP6295080 A JP 6295080A JP 6295080 A JP6295080 A JP 6295080A JP S56158431 A JPS56158431 A JP S56158431A
Authority
JP
Japan
Prior art keywords
dry
wet
temperature
fixed period
oxidation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6295080A
Other languages
Japanese (ja)
Other versions
JPS6217853B2 (en
Inventor
Takayasu Kawamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Meidensha Electric Manufacturing Co Ltd
Original Assignee
Meidensha Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Meidensha Electric Manufacturing Co Ltd filed Critical Meidensha Electric Manufacturing Co Ltd
Priority to JP6295080A priority Critical patent/JPS56158431A/en
Publication of JPS56158431A publication Critical patent/JPS56158431A/en
Publication of JPS6217853B2 publication Critical patent/JPS6217853B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate

Abstract

PURPOSE:To contrive to reduce defects of crystal by a process wherein an Si substrate is put ito dry N2 at 500-900 deg.C to be raised up to the oxidation temperature whereby up to 90% of the set temperature dry N2 is fed, then for a fixed period dry O2 is fed and thereafter to be changed over to wet O2 for maintaining for a fixed period to be slowly cooled as predetermined. CONSTITUTION:An Si substrate is put into the furnace being filled with dry N2 to be heated up to 900 deg.C for preventing low temperature oxidation. Next, when N2 surpassing 1,100 deg.C is changed over to dry O2 to be kept for more than 10min for making dense SiO2. After maintaining at the set temperature of 1,150 deg.C for more than 5min, the atmosphere is changed into wet O2 to be kept for a fixed period followed by wet oxidation for quick growth of SiO2. Subsequently the temperature is lowered to 900 deg.C at 100-300 deg.C/hr for further lowering at 50-60 deg.C/min. According to said process, crystal defects can be considerably checked.
JP6295080A 1980-05-13 1980-05-13 Forming of oxidized film of semiconductor element for electric power Granted JPS56158431A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6295080A JPS56158431A (en) 1980-05-13 1980-05-13 Forming of oxidized film of semiconductor element for electric power

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6295080A JPS56158431A (en) 1980-05-13 1980-05-13 Forming of oxidized film of semiconductor element for electric power

Publications (2)

Publication Number Publication Date
JPS56158431A true JPS56158431A (en) 1981-12-07
JPS6217853B2 JPS6217853B2 (en) 1987-04-20

Family

ID=13215096

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6295080A Granted JPS56158431A (en) 1980-05-13 1980-05-13 Forming of oxidized film of semiconductor element for electric power

Country Status (1)

Country Link
JP (1) JPS56158431A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59227128A (en) * 1983-06-08 1984-12-20 Hitachi Ltd Oxidation method for semiconductor substrate
JPS61220338A (en) * 1985-03-26 1986-09-30 Toshiba Corp Manufacture of semiconductor device
US4885257A (en) * 1983-07-29 1989-12-05 Kabushiki Kaisha Toshiba Gettering process with multi-step annealing and inert ion implantation
US5401669A (en) * 1993-05-13 1995-03-28 Memc Electronic Materials, Spa Process for the preparation of silicon wafers having controlled distribution of oxygen precipitate nucleation centers
US5403406A (en) * 1990-11-15 1995-04-04 Memc Electronic Materials, Spa Silicon wafers having controlled precipitation distribution
US6235563B1 (en) * 1989-02-14 2001-05-22 Seiko Epson Corporation Semiconductor device and method of manufacturing the same

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59227128A (en) * 1983-06-08 1984-12-20 Hitachi Ltd Oxidation method for semiconductor substrate
JPH0223023B2 (en) * 1983-06-08 1990-05-22 Hitachi Ltd
US4885257A (en) * 1983-07-29 1989-12-05 Kabushiki Kaisha Toshiba Gettering process with multi-step annealing and inert ion implantation
JPS61220338A (en) * 1985-03-26 1986-09-30 Toshiba Corp Manufacture of semiconductor device
US6235563B1 (en) * 1989-02-14 2001-05-22 Seiko Epson Corporation Semiconductor device and method of manufacturing the same
US6403497B1 (en) 1989-02-14 2002-06-11 Seiko Epson Corporation Method of manufacturing semiconductor device by two stage heating of deposited noncrystalline semiconductor
US5403406A (en) * 1990-11-15 1995-04-04 Memc Electronic Materials, Spa Silicon wafers having controlled precipitation distribution
US5401669A (en) * 1993-05-13 1995-03-28 Memc Electronic Materials, Spa Process for the preparation of silicon wafers having controlled distribution of oxygen precipitate nucleation centers

Also Published As

Publication number Publication date
JPS6217853B2 (en) 1987-04-20

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