JPS5617023A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5617023A
JPS5617023A JP9221879A JP9221879A JPS5617023A JP S5617023 A JPS5617023 A JP S5617023A JP 9221879 A JP9221879 A JP 9221879A JP 9221879 A JP9221879 A JP 9221879A JP S5617023 A JPS5617023 A JP S5617023A
Authority
JP
Japan
Prior art keywords
film
flatten
sio2
oxide film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9221879A
Other languages
Japanese (ja)
Inventor
Hirokazu Miyoshi
Kanji Konishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9221879A priority Critical patent/JPS5617023A/en
Publication of JPS5617023A publication Critical patent/JPS5617023A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To flatten the surface of an oxide film in a semiconductor device without lowering its yield by forming an oxide film on a substrate formed with an element and heat treating it in high pressure gas containing P. CONSTITUTION:A thermal oxidation film 2 is formed on an Si substrate 1, and a polysilicon film 3 is selectively formed thereon. After an SiO2 film 4 is further laminated thereon by the reaction of SiH4 with O2, it is treated in Ar containing 1% of PH3 added with small amount of O2 thereto at 7kg/cm<2> and 900 deg.C for 1hr. This treatment allows the P to be impregnated into the film 4 to lower the melting point of the SiO2 to thus melt the SiO2 film 4 so as to flatten the surface thereof. Since this configuration can flatten the oxide film at relatively lower temperature, it can prevent disconnection of wires without lowering its yield.
JP9221879A 1979-07-19 1979-07-19 Manufacture of semiconductor device Pending JPS5617023A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9221879A JPS5617023A (en) 1979-07-19 1979-07-19 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9221879A JPS5617023A (en) 1979-07-19 1979-07-19 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5617023A true JPS5617023A (en) 1981-02-18

Family

ID=14048296

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9221879A Pending JPS5617023A (en) 1979-07-19 1979-07-19 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5617023A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57167633A (en) * 1981-03-16 1982-10-15 Fairchild Camera Instr Co Method of flowing and densifying phosphosilicate glass for integrated circuit
JPS6373539A (en) * 1986-09-16 1988-04-04 Nec Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57167633A (en) * 1981-03-16 1982-10-15 Fairchild Camera Instr Co Method of flowing and densifying phosphosilicate glass for integrated circuit
JPS6373539A (en) * 1986-09-16 1988-04-04 Nec Corp Manufacture of semiconductor device

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