JPS5553451A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5553451A JPS5553451A JP12716178A JP12716178A JPS5553451A JP S5553451 A JPS5553451 A JP S5553451A JP 12716178 A JP12716178 A JP 12716178A JP 12716178 A JP12716178 A JP 12716178A JP S5553451 A JPS5553451 A JP S5553451A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- epi
- sio2
- resistance element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/8605—Resistors with PN junctions
Abstract
PURPOSE:To form a part of resistance element in impurity diffusion layer of a determined density under a film of dielectric liquid film by forming such film. CONSTITUTION:A p<+>-layer 3 is disposed on Si n-epi-layer 1 and SiO2 2 and Si3N4 are stacked thereon to form an opening 8. By steam oxidation at temperature of about 1000 deg.C, a part of P<+>-layer 3' directly under SiO2 2' selectively grown is lowered in impurity potency in relative to other part. Accordingly, the layer 3' can be used as high resistance element. The film 4 is removed and windows 9, 9' are formed and Al electrodes 7, 7' are attached. By this method resitance element can be formed by one heat diffusion properly as controlling resistance value and as peak inverse voltage is determined between epi-layer 1 and p<+>-layer 3, it is high voltage.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12716178A JPS5553451A (en) | 1978-10-16 | 1978-10-16 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12716178A JPS5553451A (en) | 1978-10-16 | 1978-10-16 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5553451A true JPS5553451A (en) | 1980-04-18 |
Family
ID=14953142
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12716178A Pending JPS5553451A (en) | 1978-10-16 | 1978-10-16 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5553451A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5851555A (en) * | 1981-09-23 | 1983-03-26 | Nippon Denso Co Ltd | Semiconductor resistance unit |
JPS62235766A (en) * | 1986-04-07 | 1987-10-15 | Matsushita Electronics Corp | Manufacture of semiconductor device |
JPH0566677A (en) * | 1992-01-31 | 1993-03-19 | Toshiba Corp | Electrostatic latent image developing device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5112779A (en) * | 1974-07-23 | 1976-01-31 | Tokyo Shibaura Electric Co | Handotaisochito sonoseizohoho |
-
1978
- 1978-10-16 JP JP12716178A patent/JPS5553451A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5112779A (en) * | 1974-07-23 | 1976-01-31 | Tokyo Shibaura Electric Co | Handotaisochito sonoseizohoho |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5851555A (en) * | 1981-09-23 | 1983-03-26 | Nippon Denso Co Ltd | Semiconductor resistance unit |
JPS62235766A (en) * | 1986-04-07 | 1987-10-15 | Matsushita Electronics Corp | Manufacture of semiconductor device |
JPH0566677A (en) * | 1992-01-31 | 1993-03-19 | Toshiba Corp | Electrostatic latent image developing device |
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