JPS55162240A - Semiconductor device and its manufacture - Google Patents

Semiconductor device and its manufacture

Info

Publication number
JPS55162240A
JPS55162240A JP6900179A JP6900179A JPS55162240A JP S55162240 A JPS55162240 A JP S55162240A JP 6900179 A JP6900179 A JP 6900179A JP 6900179 A JP6900179 A JP 6900179A JP S55162240 A JPS55162240 A JP S55162240A
Authority
JP
Japan
Prior art keywords
region
substrate
type
donors
porous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6900179A
Other languages
Japanese (ja)
Other versions
JPS5741824B2 (en
Inventor
Kazuo Imai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6900179A priority Critical patent/JPS55162240A/en
Priority to GB7934894A priority patent/GB2038548B/en
Priority to CA337,192A priority patent/CA1130014A/en
Priority to NL7907715A priority patent/NL7907715A/en
Priority to FR7926657A priority patent/FR2440080A1/en
Priority to DE2943435A priority patent/DE2943435C2/en
Publication of JPS55162240A publication Critical patent/JPS55162240A/en
Priority to US06/329,759 priority patent/US4393577A/en
Publication of JPS5741824B2 publication Critical patent/JPS5741824B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/7627—Vertical isolation by full isolation by porous oxide silicon, i.e. FIPOS techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76281—Lateral isolation by selective oxidation of silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Thin Film Transistor (AREA)

Abstract

PURPOSE:To obtain a substrate suitable for use in a semiconductor device to operate at high speed with low power consumption by the method wherein, when a P-type region is formed on a P-type Si substrate, the sides and the bottom or the entire surface of this region is electrically separated by a porous Si oxide. CONSTITUTION:Protons which are to become donors are injected into a specified region of main surface 5 of P-type Si substrate 1 and this is heat treated, and thereby N-type region 20 is formed. The temperature for the heat treatment at this time is set below 500 deg.C and thereby the decrease or loss of donors is prevented. In this way, N-type region 20 is provided. Substrate 1 is put into a solution of hydrofluoric acid, and with substrate 1 made as an anode, anodic reaction is operated. By utilizing the phonomenon that N-type Si does not become porous, a greater part of substrate 1 is made into porous region 22, and region 20 is surrounded by this. Subsequently, substrate 1 is heat-treated at 800-1100 deg.C, and thereby the donors are made to disappear; and region 24 which has returned to the P-type and a region consisting of SiO2 film 25 covering this surface are obtained on the surface layer of P-type substrate 1, and here a desired element is formed.
JP6900179A 1978-10-27 1979-06-04 Semiconductor device and its manufacture Granted JPS55162240A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP6900179A JPS55162240A (en) 1979-06-04 1979-06-04 Semiconductor device and its manufacture
GB7934894A GB2038548B (en) 1978-10-27 1979-10-08 Isolating semiconductor device by porous silicon oxide
CA337,192A CA1130014A (en) 1978-10-27 1979-10-09 Semiconductor devices and method of manufacturing the same
NL7907715A NL7907715A (en) 1978-10-27 1979-10-19 SEMICONDUCTOR DEVICES AND METHOD FOR MANUFACTURING THEM.
FR7926657A FR2440080A1 (en) 1978-10-27 1979-10-26 SEMICONDUCTOR DEVICES AND METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPRISING POROUS SILICON REGIONS MADE BY ANODINATION
DE2943435A DE2943435C2 (en) 1978-10-27 1979-10-26 Semiconductor structure and process for its manufacture
US06/329,759 US4393577A (en) 1978-10-27 1981-12-11 Semiconductor devices and method of manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6900179A JPS55162240A (en) 1979-06-04 1979-06-04 Semiconductor device and its manufacture

Publications (2)

Publication Number Publication Date
JPS55162240A true JPS55162240A (en) 1980-12-17
JPS5741824B2 JPS5741824B2 (en) 1982-09-04

Family

ID=13389916

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6900179A Granted JPS55162240A (en) 1978-10-27 1979-06-04 Semiconductor device and its manufacture

Country Status (1)

Country Link
JP (1) JPS55162240A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02104966A (en) * 1988-10-12 1990-04-17 Nissan Motor Co Ltd Fuel supply system for internal combustion engine
JPH05102471A (en) * 1991-10-03 1993-04-23 Sharp Corp Manufacture of semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51278A (en) * 1974-06-18 1976-01-05 Matsushita Electric Ind Co Ltd HANDOTAISHUSEKIKAIROKITAINO SEIZOHOHO
JPS5559736A (en) * 1978-10-27 1980-05-06 Nippon Telegr & Teleph Corp <Ntt> Substrate body for semiconductor integrated circuit and its preparation
JPS5559735A (en) * 1978-10-27 1980-05-06 Nippon Telegr & Teleph Corp <Ntt> Substrate body for semiconductor integrated circuit and its preparation
JPS55156335A (en) * 1979-05-24 1980-12-05 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51278A (en) * 1974-06-18 1976-01-05 Matsushita Electric Ind Co Ltd HANDOTAISHUSEKIKAIROKITAINO SEIZOHOHO
JPS5559736A (en) * 1978-10-27 1980-05-06 Nippon Telegr & Teleph Corp <Ntt> Substrate body for semiconductor integrated circuit and its preparation
JPS5559735A (en) * 1978-10-27 1980-05-06 Nippon Telegr & Teleph Corp <Ntt> Substrate body for semiconductor integrated circuit and its preparation
JPS55156335A (en) * 1979-05-24 1980-12-05 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device and its manufacture

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02104966A (en) * 1988-10-12 1990-04-17 Nissan Motor Co Ltd Fuel supply system for internal combustion engine
JPH05102471A (en) * 1991-10-03 1993-04-23 Sharp Corp Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5741824B2 (en) 1982-09-04

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