JPS566493A - Manufacture of semiconductor laser element - Google Patents
Manufacture of semiconductor laser elementInfo
- Publication number
- JPS566493A JPS566493A JP8250079A JP8250079A JPS566493A JP S566493 A JPS566493 A JP S566493A JP 8250079 A JP8250079 A JP 8250079A JP 8250079 A JP8250079 A JP 8250079A JP S566493 A JPS566493 A JP S566493A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- acetic acid
- hydrogen peroxide
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000004519 manufacturing process Methods 0.000 title 1
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 229910002665 PbTe Inorganic materials 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 abstract 1
- 230000001070 adhesive effect Effects 0.000 abstract 1
- 239000007791 liquid phase Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- OCGWQDWYSQAFTO-UHFFFAOYSA-N tellanylidenelead Chemical compound [Pb]=[Te] OCGWQDWYSQAFTO-UHFFFAOYSA-N 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Weting (AREA)
Abstract
PURPOSE:To remove the residual adhesive from the surface of a multiple elements semiconductor thin layer without affecting th substrate or the like by etching the surface of the thin layer with a mixture solution of acetic acid and hydrogen peroxide once. CONSTITUTION:Pb1-xSnxTe crystalline layer containing different composition is formed as a buffer layer 2, an active layer 3 and a top layer 4 on a PbTe substrate 1 by a liquid phase epitaxial method. Thereafter, an etching solution containing acetic acid (containing 99% of CH3COOH) and hydrogen peroxide (containing 35% of H2O2) at 1:1 of volumetric ratio as mixed and heated at 40 deg.C is used to etch the surface of the top layer 4 of the substrate 1 for approx. 5-10min, and the layer 4 is then rinsed with water.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8250079A JPS566493A (en) | 1979-06-27 | 1979-06-27 | Manufacture of semiconductor laser element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8250079A JPS566493A (en) | 1979-06-27 | 1979-06-27 | Manufacture of semiconductor laser element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS566493A true JPS566493A (en) | 1981-01-23 |
| JPS575071B2 JPS575071B2 (en) | 1982-01-28 |
Family
ID=13776208
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8250079A Granted JPS566493A (en) | 1979-06-27 | 1979-06-27 | Manufacture of semiconductor laser element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS566493A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03178373A (en) * | 1989-12-07 | 1991-08-02 | Toppan Printing Co Ltd | Decorative material and manufacture thereof |
-
1979
- 1979-06-27 JP JP8250079A patent/JPS566493A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03178373A (en) * | 1989-12-07 | 1991-08-02 | Toppan Printing Co Ltd | Decorative material and manufacture thereof |
| JPH0685911B2 (en) * | 1989-12-07 | 1994-11-02 | 凸版印刷株式会社 | Decorative material and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS575071B2 (en) | 1982-01-28 |
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