JPS57106041A - Manufacture of semiconductor crystal - Google Patents

Manufacture of semiconductor crystal

Info

Publication number
JPS57106041A
JPS57106041A JP18223780A JP18223780A JPS57106041A JP S57106041 A JPS57106041 A JP S57106041A JP 18223780 A JP18223780 A JP 18223780A JP 18223780 A JP18223780 A JP 18223780A JP S57106041 A JPS57106041 A JP S57106041A
Authority
JP
Japan
Prior art keywords
substrate
xsnxte
pbte
liquid phase
residue
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18223780A
Other languages
Japanese (ja)
Inventor
Hirokazu Fukuda
Kouji Shinohara
Yoshio Kawabata
Yoshito Nishijima
Kosaku Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18223780A priority Critical patent/JPS57106041A/en
Publication of JPS57106041A publication Critical patent/JPS57106041A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02625—Liquid deposition using melted materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02417—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To facilitate etching of a residue and to obtain the flat surface of a semiconductor crystal by a method wherein a molten material of Pb1-xSnxTe having high concentration of Sn is replaced with a liquid phase having low concentration of Sn to make the residue as to Pb1-xSnxTe having a small quantity of Sn contents. CONSTITUTION:According to the customary method using a liquid phase epitaxial growth device, a Pb1-xSnxTe buffer layer is formed on a PbTe substrate 12, and an active layer and a top layer are laminated thereon changing the composition ratio of x. Then the PbTe liquid phase 17 is put statically on the substrate for about 2min, and the remaining molten material of Pb1-xSnxTe on the substrate without to be removed by a sliding member is replaced with PbTe. The PbTe liquid phase is removed from the upper part of the substrate. Accordingly the residue containing almost no Sn remains on the top layer. The residue having low or zero Sn contents dissolves in a mixed etching liquid of acetic acid and hydrogen peroxide, and the surface of top layer of the substrate is flattened afte etching. When the substrate obtained by this way is used, performance and yield of the laser element is enhanced.
JP18223780A 1980-12-22 1980-12-22 Manufacture of semiconductor crystal Pending JPS57106041A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18223780A JPS57106041A (en) 1980-12-22 1980-12-22 Manufacture of semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18223780A JPS57106041A (en) 1980-12-22 1980-12-22 Manufacture of semiconductor crystal

Publications (1)

Publication Number Publication Date
JPS57106041A true JPS57106041A (en) 1982-07-01

Family

ID=16114735

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18223780A Pending JPS57106041A (en) 1980-12-22 1980-12-22 Manufacture of semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS57106041A (en)

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