JPS57106041A - Manufacture of semiconductor crystal - Google Patents
Manufacture of semiconductor crystalInfo
- Publication number
- JPS57106041A JPS57106041A JP18223780A JP18223780A JPS57106041A JP S57106041 A JPS57106041 A JP S57106041A JP 18223780 A JP18223780 A JP 18223780A JP 18223780 A JP18223780 A JP 18223780A JP S57106041 A JPS57106041 A JP S57106041A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- xsnxte
- pbte
- liquid phase
- residue
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02417—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE:To facilitate etching of a residue and to obtain the flat surface of a semiconductor crystal by a method wherein a molten material of Pb1-xSnxTe having high concentration of Sn is replaced with a liquid phase having low concentration of Sn to make the residue as to Pb1-xSnxTe having a small quantity of Sn contents. CONSTITUTION:According to the customary method using a liquid phase epitaxial growth device, a Pb1-xSnxTe buffer layer is formed on a PbTe substrate 12, and an active layer and a top layer are laminated thereon changing the composition ratio of x. Then the PbTe liquid phase 17 is put statically on the substrate for about 2min, and the remaining molten material of Pb1-xSnxTe on the substrate without to be removed by a sliding member is replaced with PbTe. The PbTe liquid phase is removed from the upper part of the substrate. Accordingly the residue containing almost no Sn remains on the top layer. The residue having low or zero Sn contents dissolves in a mixed etching liquid of acetic acid and hydrogen peroxide, and the surface of top layer of the substrate is flattened afte etching. When the substrate obtained by this way is used, performance and yield of the laser element is enhanced.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18223780A JPS57106041A (en) | 1980-12-22 | 1980-12-22 | Manufacture of semiconductor crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18223780A JPS57106041A (en) | 1980-12-22 | 1980-12-22 | Manufacture of semiconductor crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57106041A true JPS57106041A (en) | 1982-07-01 |
Family
ID=16114735
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18223780A Pending JPS57106041A (en) | 1980-12-22 | 1980-12-22 | Manufacture of semiconductor crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57106041A (en) |
-
1980
- 1980-12-22 JP JP18223780A patent/JPS57106041A/en active Pending
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR850000789A (en) | Manufacturing Method of Semiconductor Device | |
JPS57106041A (en) | Manufacture of semiconductor crystal | |
JPS5493380A (en) | Semiconductor light emitting device | |
JPS57184229A (en) | Manufacture of semiconductor device | |
JPS5534445A (en) | Semiconductor luminous device | |
JPS5742598A (en) | Liquid-phase epitaxial growing method | |
JPS54162685A (en) | Liquid phase epitaxial growth method | |
JPS566493A (en) | Manufacture of semiconductor laser element | |
JPS57167624A (en) | Liquid phase epitaxial growth method | |
JPS57128943A (en) | Insulation isolated semiconductor integrated device and manufacture thereof | |
JPS52155186A (en) | Liquid phase growth of iii-v group semiconductor | |
JPS565396A (en) | Liquid phase epitaxial growth | |
JPS52109866A (en) | Liquid epitaxial growing method | |
JPS5795620A (en) | Method for adding impurity | |
JPS56135937A (en) | Manufacture of semiconductor device | |
JPS52155187A (en) | Liquid phase growth of semiconductor crystal | |
JPS5317065A (en) | Liquid phase growth method for semiconductor substrate | |
JPS56148822A (en) | Liquid phase crystal crowth | |
JPS6477118A (en) | Manufacture of ga1-xalxas epitaxial wafer | |
JPS55117231A (en) | Growing method of crystal | |
JPS57178394A (en) | Manufacture of semiconductor light emitting device | |
JPS57102012A (en) | Liquid phase epitaxy method | |
JPS6129121A (en) | Gaas liquid phase epitaxial growth method | |
JPS57155727A (en) | Manufacture of semiconductor device | |
JPS5478377A (en) | Method and apparatus for growing semiconductor crystal |