JPS5795620A - Method for adding impurity - Google Patents

Method for adding impurity

Info

Publication number
JPS5795620A
JPS5795620A JP17151480A JP17151480A JPS5795620A JP S5795620 A JPS5795620 A JP S5795620A JP 17151480 A JP17151480 A JP 17151480A JP 17151480 A JP17151480 A JP 17151480A JP S5795620 A JPS5795620 A JP S5795620A
Authority
JP
Japan
Prior art keywords
growing
added
impurities
impurity
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17151480A
Other languages
Japanese (ja)
Inventor
Hiroshi Hayashi
Kazuhisa Murata
Saburo Yamamoto
Takuo Takenaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP17151480A priority Critical patent/JPS5795620A/en
Publication of JPS5795620A publication Critical patent/JPS5795620A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To control the quantity of fine impurities to be added into a growing layer accurately, by employing a semiconductor crystal, which has the same composition as that of a source crsytal which is to become a growing material and on the surface of which a thin film comprising an impurity element to be doped is deposited, as an impurity material used for liquid phase epitaxial growing. CONSTITUTION:It is very difficult to measure very small amount of metal Te when a Te doping type Ga0.5Al0.5As layer, which has impurity concentration such as carrier concentration of 5X20<17>/cm<3> at a growing temperature of 800 deg.C, is grown on a substrate such as GaAs. Therefore the following method is employed. The growing material is constituted by Ga, Al, GaAs, and Te. However, since the quantity of inclusiion of Te is as extremely small as 0.035mg, a GaAlAs crystal, on which a thin Te film is deposited to about 1mum, is employed instead of using metal Te. At this time the impurities to be added are not limited to Te. In this method, extremely fine quantity of impurities can be added.
JP17151480A 1980-12-04 1980-12-04 Method for adding impurity Pending JPS5795620A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17151480A JPS5795620A (en) 1980-12-04 1980-12-04 Method for adding impurity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17151480A JPS5795620A (en) 1980-12-04 1980-12-04 Method for adding impurity

Publications (1)

Publication Number Publication Date
JPS5795620A true JPS5795620A (en) 1982-06-14

Family

ID=15924526

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17151480A Pending JPS5795620A (en) 1980-12-04 1980-12-04 Method for adding impurity

Country Status (1)

Country Link
JP (1) JPS5795620A (en)

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