JPS5795620A - Method for adding impurity - Google Patents
Method for adding impurityInfo
- Publication number
- JPS5795620A JPS5795620A JP17151480A JP17151480A JPS5795620A JP S5795620 A JPS5795620 A JP S5795620A JP 17151480 A JP17151480 A JP 17151480A JP 17151480 A JP17151480 A JP 17151480A JP S5795620 A JPS5795620 A JP S5795620A
- Authority
- JP
- Japan
- Prior art keywords
- growing
- added
- impurities
- impurity
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17151480A JPS5795620A (en) | 1980-12-04 | 1980-12-04 | Method for adding impurity |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17151480A JPS5795620A (en) | 1980-12-04 | 1980-12-04 | Method for adding impurity |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5795620A true JPS5795620A (en) | 1982-06-14 |
Family
ID=15924526
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17151480A Pending JPS5795620A (en) | 1980-12-04 | 1980-12-04 | Method for adding impurity |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5795620A (ja) |
-
1980
- 1980-12-04 JP JP17151480A patent/JPS5795620A/ja active Pending
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