JPS5520258A - Liquid phase epitaxial growing method and device - Google Patents

Liquid phase epitaxial growing method and device

Info

Publication number
JPS5520258A
JPS5520258A JP9301978A JP9301978A JPS5520258A JP S5520258 A JPS5520258 A JP S5520258A JP 9301978 A JP9301978 A JP 9301978A JP 9301978 A JP9301978 A JP 9301978A JP S5520258 A JPS5520258 A JP S5520258A
Authority
JP
Japan
Prior art keywords
soln
substrate
rods
vessel
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9301978A
Other languages
Japanese (ja)
Other versions
JPS611393B2 (en
Inventor
Masaru Wada
Takashi Sugino
Yuichi Shimizu
Kunio Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9301978A priority Critical patent/JPS5520258A/en
Publication of JPS5520258A publication Critical patent/JPS5520258A/en
Publication of JPS611393B2 publication Critical patent/JPS611393B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To obtain a region, where a film grown is provided with a partially different thickness or no crystal is partially grown, in one process by contacting crystal growth inhibiting members set in a soln. vessel to a substrate for crystal growth or moving the members in close to the substrate and by growing crystals on the substrate from a soln. for growth.
CONSTITUTION: At the bottom of soln. vessel 10, for example, cylindrical carbon rods 11 are set in parallel with the slide direction, and crystals are grown through each space between rods 11. When a Ga soln. contg. GaAs and Ge is contacted to n-type substrate 12 to grow p-type GaAs layer 13, by suitably regulating the gap between rods 11 and substrate 12 the Ga soln. does not reach parts of substrate 12 just under rods 11, thereby forming stripe-shaped ungrown region 14 along rods 11 as well as uniform grown layer 13. The above process is carried out using one soln. vessel. By applying this process to a multi-vessel structure an element with special function can be obtd.
COPYRIGHT: (C)1980,JPO&Japio
JP9301978A 1978-07-28 1978-07-28 Liquid phase epitaxial growing method and device Granted JPS5520258A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9301978A JPS5520258A (en) 1978-07-28 1978-07-28 Liquid phase epitaxial growing method and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9301978A JPS5520258A (en) 1978-07-28 1978-07-28 Liquid phase epitaxial growing method and device

Publications (2)

Publication Number Publication Date
JPS5520258A true JPS5520258A (en) 1980-02-13
JPS611393B2 JPS611393B2 (en) 1986-01-16

Family

ID=14070763

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9301978A Granted JPS5520258A (en) 1978-07-28 1978-07-28 Liquid phase epitaxial growing method and device

Country Status (1)

Country Link
JP (1) JPS5520258A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7013808B2 (en) 2017-11-15 2022-02-01 富士フイルムビジネスイノベーション株式会社 Information processing equipment and programs

Also Published As

Publication number Publication date
JPS611393B2 (en) 1986-01-16

Similar Documents

Publication Publication Date Title
EP0356037A3 (en) Method of making an electro-optical device with inverted transparent substrate
JPS5520258A (en) Liquid phase epitaxial growing method and device
JPS5315299A (en) Liquid-phase epitaxial growth method of electrooptical crystals
GB1526898A (en) Production of epitaxial layers on monocrystalline substrates
JPS5683933A (en) Liquid phase epitaxial growth
JPS52115171A (en) Liquid phase epitaxial growing method
JPS52117900A (en) Growing method for single crystal thin film of bismuth oxide compounds
JPS54114089A (en) Hall element using gallium arsenide crystal
JPS5777096A (en) Liquid phase epitaxial growing apparatus
JPS5635411A (en) Epitaxial wafer of gallium arsenide and its manufacture
JPS52155189A (en) Multiple layer crystal growth
JPS56114317A (en) Manufacture of semiconductor heterojunction photoelectric device
JPS542660A (en) Liquid-phase epitaxial growth method of compound semiconductor
JPS5380965A (en) Liquid-phase growth method
JPS5350671A (en) Liquid phase epitaxial crystal growth method
JPS554947A (en) Method of growing liquid phase epitaxial
JPS56161639A (en) Method of epitaxially growing in liquid phase
Pietraszko et al. Application of Precise Lattice Parameter Determination by Bond Method to the Investigation of Epitaxial GdxHg 1-x< cc Te Layers
JPS52149080A (en) Crystal thin film of compound semiconductor
JPS5795620A (en) Method for adding impurity
JPS5379384A (en) Forming method of polycrystalline gaas thin film and stabilizing method ofsemiconductor of semiconductor
JPS52141187A (en) Semiconductor laser and its liquid phase epitaxial crystal growth method
JPS57206033A (en) Method of liquid phase epitaxial growth
JPS52154347A (en) Low temperature single crystal thin film growth method
JPS55136197A (en) Liquid phase epitaxial growing method