JPS5520258A - Liquid phase epitaxial growing method and device - Google Patents
Liquid phase epitaxial growing method and deviceInfo
- Publication number
- JPS5520258A JPS5520258A JP9301978A JP9301978A JPS5520258A JP S5520258 A JPS5520258 A JP S5520258A JP 9301978 A JP9301978 A JP 9301978A JP 9301978 A JP9301978 A JP 9301978A JP S5520258 A JPS5520258 A JP S5520258A
- Authority
- JP
- Japan
- Prior art keywords
- soln
- substrate
- rods
- vessel
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
PURPOSE: To obtain a region, where a film grown is provided with a partially different thickness or no crystal is partially grown, in one process by contacting crystal growth inhibiting members set in a soln. vessel to a substrate for crystal growth or moving the members in close to the substrate and by growing crystals on the substrate from a soln. for growth.
CONSTITUTION: At the bottom of soln. vessel 10, for example, cylindrical carbon rods 11 are set in parallel with the slide direction, and crystals are grown through each space between rods 11. When a Ga soln. contg. GaAs and Ge is contacted to n-type substrate 12 to grow p-type GaAs layer 13, by suitably regulating the gap between rods 11 and substrate 12 the Ga soln. does not reach parts of substrate 12 just under rods 11, thereby forming stripe-shaped ungrown region 14 along rods 11 as well as uniform grown layer 13. The above process is carried out using one soln. vessel. By applying this process to a multi-vessel structure an element with special function can be obtd.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9301978A JPS5520258A (en) | 1978-07-28 | 1978-07-28 | Liquid phase epitaxial growing method and device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9301978A JPS5520258A (en) | 1978-07-28 | 1978-07-28 | Liquid phase epitaxial growing method and device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5520258A true JPS5520258A (en) | 1980-02-13 |
JPS611393B2 JPS611393B2 (en) | 1986-01-16 |
Family
ID=14070763
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9301978A Granted JPS5520258A (en) | 1978-07-28 | 1978-07-28 | Liquid phase epitaxial growing method and device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5520258A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7013808B2 (en) | 2017-11-15 | 2022-02-01 | 富士フイルムビジネスイノベーション株式会社 | Information processing equipment and programs |
-
1978
- 1978-07-28 JP JP9301978A patent/JPS5520258A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS611393B2 (en) | 1986-01-16 |
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