JPS52149080A - Crystal thin film of compound semiconductor - Google Patents

Crystal thin film of compound semiconductor

Info

Publication number
JPS52149080A
JPS52149080A JP6515176A JP6515176A JPS52149080A JP S52149080 A JPS52149080 A JP S52149080A JP 6515176 A JP6515176 A JP 6515176A JP 6515176 A JP6515176 A JP 6515176A JP S52149080 A JPS52149080 A JP S52149080A
Authority
JP
Japan
Prior art keywords
compound semiconductor
thin film
crystal thin
crystal
liquid phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6515176A
Other languages
Japanese (ja)
Other versions
JPS5437479B2 (en
Inventor
Haruo Nagai
Etsuo Noguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP6515176A priority Critical patent/JPS52149080A/en
Publication of JPS52149080A publication Critical patent/JPS52149080A/en
Publication of JPS5437479B2 publication Critical patent/JPS5437479B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE: To obtain a crystal of good quality by effecting liquid phase growth with the use of a molten solution containing Ga, Sb, As and P at the middle of the end liquid phase growth layer of a compound semiconductor of groups III-V whereby the lattice constant of the crystal varies continuously.
COPYRIGHT: (C)1977,JPO&Japio
JP6515176A 1976-06-05 1976-06-05 Crystal thin film of compound semiconductor Granted JPS52149080A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6515176A JPS52149080A (en) 1976-06-05 1976-06-05 Crystal thin film of compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6515176A JPS52149080A (en) 1976-06-05 1976-06-05 Crystal thin film of compound semiconductor

Publications (2)

Publication Number Publication Date
JPS52149080A true JPS52149080A (en) 1977-12-10
JPS5437479B2 JPS5437479B2 (en) 1979-11-15

Family

ID=13278581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6515176A Granted JPS52149080A (en) 1976-06-05 1976-06-05 Crystal thin film of compound semiconductor

Country Status (1)

Country Link
JP (1) JPS52149080A (en)

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ELECTRONICS=1968 *

Also Published As

Publication number Publication date
JPS5437479B2 (en) 1979-11-15

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