JPS5777096A - Liquid phase epitaxial growing apparatus - Google Patents

Liquid phase epitaxial growing apparatus

Info

Publication number
JPS5777096A
JPS5777096A JP15179480A JP15179480A JPS5777096A JP S5777096 A JPS5777096 A JP S5777096A JP 15179480 A JP15179480 A JP 15179480A JP 15179480 A JP15179480 A JP 15179480A JP S5777096 A JPS5777096 A JP S5777096A
Authority
JP
Japan
Prior art keywords
soln
crystal
plate
holding
arrow direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15179480A
Other languages
Japanese (ja)
Other versions
JPS6110431B2 (en
Inventor
Yoichi Osawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15179480A priority Critical patent/JPS5777096A/en
Publication of JPS5777096A publication Critical patent/JPS5777096A/en
Publication of JPS6110431B2 publication Critical patent/JPS6110431B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To obtain a high quality crystal with high productivity by constructing a soln. separating plate composed of a plurality of thin baths, a section holding a substrate crystal, etc. in a freely movable state in the titled growing apparatus applying a sliding method.
CONSTITUTION: A GaAs substrate crystal 101 is set on a substrate sliding plate 100, and platelike seed crystals 121W124 are attached to a section 120 holding the plate-like seed crystals. A solute and an impurity 111W114 are distributed to part of a soln. separating plate 110, and a solvent Ga 131W134 is poured in a bath 130 for a soln. for growth. The bath 130 is moved in the arrow direction to join the solvent Ga 131W134 and the solute 111W114 together, and by moving the plate 110 in the arrow direction, thin soln. layers 151W154 are formed. The section 100 holding the substrate crystal 101 is then moved in the arrow direction to slide the crystal 101 to the under sides of the layers 151W154 for growth in succession. Thus, a grown layer is obtd.
COPYRIGHT: (C)1982,JPO&Japio
JP15179480A 1980-10-29 1980-10-29 Liquid phase epitaxial growing apparatus Granted JPS5777096A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15179480A JPS5777096A (en) 1980-10-29 1980-10-29 Liquid phase epitaxial growing apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15179480A JPS5777096A (en) 1980-10-29 1980-10-29 Liquid phase epitaxial growing apparatus

Publications (2)

Publication Number Publication Date
JPS5777096A true JPS5777096A (en) 1982-05-14
JPS6110431B2 JPS6110431B2 (en) 1986-03-29

Family

ID=15526434

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15179480A Granted JPS5777096A (en) 1980-10-29 1980-10-29 Liquid phase epitaxial growing apparatus

Country Status (1)

Country Link
JP (1) JPS5777096A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01107449U (en) * 1988-01-11 1989-07-20
EP4025622A1 (en) 2019-09-03 2022-07-13 Dow Global Technologies LLC Foam formulation

Also Published As

Publication number Publication date
JPS6110431B2 (en) 1986-03-29

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