JPS5468160A - Liquid phase epitaxial growth method - Google Patents

Liquid phase epitaxial growth method

Info

Publication number
JPS5468160A
JPS5468160A JP13455577A JP13455577A JPS5468160A JP S5468160 A JPS5468160 A JP S5468160A JP 13455577 A JP13455577 A JP 13455577A JP 13455577 A JP13455577 A JP 13455577A JP S5468160 A JPS5468160 A JP S5468160A
Authority
JP
Japan
Prior art keywords
forming
liquid phase
epitaxial growth
growth method
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13455577A
Other languages
Japanese (ja)
Inventor
Kazuo Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP13455577A priority Critical patent/JPS5468160A/en
Publication of JPS5468160A publication Critical patent/JPS5468160A/en
Pending legal-status Critical Current

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  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: To avoid boundary deficiency, by forming the crystal layer having homogeneous junction boundary, in liquid phase epitaxial growth method.
CONSTITUTION: The multi-dimensional growing solutions 5 and 6 more than three dimension are split into two, the specified dopant is included in them, and they are placed on each of the substrate 1 and the dummy crystal plate 2, they are cooled with a given and same condition, forming the first growing layer on the substrate and simultaneously, forming the growing layer on the dummy crystal plate 2. Next, the two solutions are moved at the same time and the solution present on the dummy crystal plate 2 is placed on the substrate 1, forming the second growing layer having the homogeneous junction boundary on the first growing layer.
COPYRIGHT: (C)1979,JPO&Japio
JP13455577A 1977-11-11 1977-11-11 Liquid phase epitaxial growth method Pending JPS5468160A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13455577A JPS5468160A (en) 1977-11-11 1977-11-11 Liquid phase epitaxial growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13455577A JPS5468160A (en) 1977-11-11 1977-11-11 Liquid phase epitaxial growth method

Publications (1)

Publication Number Publication Date
JPS5468160A true JPS5468160A (en) 1979-06-01

Family

ID=15131051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13455577A Pending JPS5468160A (en) 1977-11-11 1977-11-11 Liquid phase epitaxial growth method

Country Status (1)

Country Link
JP (1) JPS5468160A (en)

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