JPS5710922A - Sliding type liquid phase epitaxial growth device - Google Patents

Sliding type liquid phase epitaxial growth device

Info

Publication number
JPS5710922A
JPS5710922A JP8573380A JP8573380A JPS5710922A JP S5710922 A JPS5710922 A JP S5710922A JP 8573380 A JP8573380 A JP 8573380A JP 8573380 A JP8573380 A JP 8573380A JP S5710922 A JPS5710922 A JP S5710922A
Authority
JP
Japan
Prior art keywords
growing
crystal substrate
molten liquid
crystalization
passage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8573380A
Other languages
Japanese (ja)
Other versions
JPS628008B2 (en
Inventor
Ryoichi Hirano
Jun Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8573380A priority Critical patent/JPS5710922A/en
Publication of JPS5710922A publication Critical patent/JPS5710922A/en
Publication of JPS628008B2 publication Critical patent/JPS628008B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To provide a uniform growing of epitaxial layer having a superior characteristic of crystalization and flatness by a method wherein a crystal substrate plate for holding crystalized materials is arranged in a passage for molten liquid to be pushed into a growing chamber from a liquid tank by a pressing block. CONSTITUTION:Growing crystal substrate plates 11, 12 are provided in a growing chamber 10, a groove 16 and a crystal substrate plate 17 for holding the crystalization material are arranged at a part of the growing slider 9 having a passage 13 and nonliquid tank 15 corresponding to a passage for molten liquid pushed from the liquid tank to the growing chamber 10 by the pressing block, while the crystalized material present in the molten liquid is held and removed so as to cause over- saturated molten liquid to be saturated and melted. Thereby, it is possible to make a uniformly growing epitaxial layer having a better crystalization and flatness even in a crystal substrate placed thereon, and further a thickness of the film in a range of submicron order may easily be controlled.
JP8573380A 1980-06-24 1980-06-24 Sliding type liquid phase epitaxial growth device Granted JPS5710922A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8573380A JPS5710922A (en) 1980-06-24 1980-06-24 Sliding type liquid phase epitaxial growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8573380A JPS5710922A (en) 1980-06-24 1980-06-24 Sliding type liquid phase epitaxial growth device

Publications (2)

Publication Number Publication Date
JPS5710922A true JPS5710922A (en) 1982-01-20
JPS628008B2 JPS628008B2 (en) 1987-02-20

Family

ID=13867034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8573380A Granted JPS5710922A (en) 1980-06-24 1980-06-24 Sliding type liquid phase epitaxial growth device

Country Status (1)

Country Link
JP (1) JPS5710922A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111727094A (en) * 2018-03-22 2020-09-29 Ntn株式会社 Machine component and method for manufacturing same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3125125A4 (en) 2014-03-24 2018-07-25 Square Enix Co., Ltd. Interactive system, terminal device, server device, control method, program, and recording medium

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111727094A (en) * 2018-03-22 2020-09-29 Ntn株式会社 Machine component and method for manufacturing same

Also Published As

Publication number Publication date
JPS628008B2 (en) 1987-02-20

Similar Documents

Publication Publication Date Title
JPS5710922A (en) Sliding type liquid phase epitaxial growth device
US4149914A (en) Method for depositing epitaxial monocrystalline semiconductive layers via sliding liquid phase epitaxy
JPS55104999A (en) Production of silicon carbide crystal layer
JPS645999A (en) Production of thin film of ferroelectric single crystal
JPS56107550A (en) Molecular beam crystal growing process
SU882247A1 (en) METHOD OF GROWING MONOCRYSTALLINE SiC
JPS56149399A (en) Liquid phase epitaxial growing method
JPS56131927A (en) Method and device for liquid phase epitaquitial crystal growth
JPS5659696A (en) Liquid phase epitaxial growing apparatus
JPS5337184A (en) Epitaxially growing method in liquid phase
JPS57188828A (en) Liquid-phase epitaxial growing method
JPS52106673A (en) Crystal growing method and device thereof
JPS56155527A (en) Apparatus for liquid phase epitaxial growth
JPS5776828A (en) Manufacture of semiconductor device
JPS5498173A (en) Liquid phase epitaxial growth device
JPS56169334A (en) Liquid phase epitaxially growing method for multiple-element semiconductor
JPS5478377A (en) Method and apparatus for growing semiconductor crystal
JPS5635414A (en) Method of liquid phase growth
JPS55154398A (en) Growing method and apparatus for liquid phase multi- layered membrane of semiconductor
JPS53100770A (en) Production of epitaxial growth layer
JPS56160033A (en) Liquid phase epitaxial growth
JPS5777095A (en) Liquid phase epitaxial growing apparatus
JPS5747798A (en) Liquid phase epitaxial growing method
JPS61108131A (en) Crystal growth method
JPS5368570A (en) Formation method of semiconductor epitaxial film