JPS5776828A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5776828A
JPS5776828A JP15311280A JP15311280A JPS5776828A JP S5776828 A JPS5776828 A JP S5776828A JP 15311280 A JP15311280 A JP 15311280A JP 15311280 A JP15311280 A JP 15311280A JP S5776828 A JPS5776828 A JP S5776828A
Authority
JP
Japan
Prior art keywords
inp
substrate
volatile element
growing
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15311280A
Other languages
Japanese (ja)
Inventor
Toshihiro Kusuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15311280A priority Critical patent/JPS5776828A/en
Publication of JPS5776828A publication Critical patent/JPS5776828A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE:To prevent evaporation of volatile element in epitaxial growing of a compound semiconductor, by arranging supplying bodies including volatile element of a substrate under the compound semiconductor substrate, and keeping vapor pressure of the volatile element at a thermal equilibrium state during the thermal cycle of liquid phase growth. CONSTITUTION:In the case one layer on InP is grown, InP crystal lumps 5 are placed in a InP crystal lump placing part 4 in a carbon table 1, the InP substrate 7 is provided in the substrate placing part 4, and In+P melt 8 for growing is set in a melt reservoir in a slider 6. The epitaxial growing of InP is performed by sliding the silder 6 in the direction of an arrow. During the thermal cycle for the epitaxial growth of InP, P vapor generated from the InP crystal lumps 5 is supplied to the surface of the InP substrate 7 through a supply port 2. The surface is always filled with P vapor which is in the state of thermal equilibrium. In this method, evaporation of P from the surface of the InP substrate and the epitaxially grown surface can be prevented.
JP15311280A 1980-10-31 1980-10-31 Manufacture of semiconductor device Pending JPS5776828A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15311280A JPS5776828A (en) 1980-10-31 1980-10-31 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15311280A JPS5776828A (en) 1980-10-31 1980-10-31 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5776828A true JPS5776828A (en) 1982-05-14

Family

ID=15555228

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15311280A Pending JPS5776828A (en) 1980-10-31 1980-10-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5776828A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6030121A (en) * 1983-07-28 1985-02-15 Nec Corp Crystal growth of ingaasp on inp

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6030121A (en) * 1983-07-28 1985-02-15 Nec Corp Crystal growth of ingaasp on inp

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