JPS55107227A - Device for growing of semiconductor in vapor phase - Google Patents
Device for growing of semiconductor in vapor phaseInfo
- Publication number
- JPS55107227A JPS55107227A JP1395279A JP1395279A JPS55107227A JP S55107227 A JPS55107227 A JP S55107227A JP 1395279 A JP1395279 A JP 1395279A JP 1395279 A JP1395279 A JP 1395279A JP S55107227 A JPS55107227 A JP S55107227A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- substrate
- growing
- inp
- fine holes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Semiconductor Lasers (AREA)
Abstract
PURPOSE: To quickly switch a gas for growing use on the substrate by causing the gas to flow on the substrate through fine holes of a gas supplying member, and controlling and introducing an atmospheric gas on the substrate through an inlet tube.
CONSTITUTION: The temperture of an InP substrate 11 is raised to a predetermined value in a deisred atmospheric gas. Then, in order to grow crystals of compounds of In, Ga, As and P, a specific gas is introduced 17 by a carrier gas, and passed through fine holes 16a of a supplying member 16 and caused to flow onto the substrate 11. When a desired grown layer is obtained, He or Ar of a high purity is introduced 18 onto the substrate, to remove the remaining growing gas. Then, an InP growing gas is similarly introduced onto the substrate, and the introduction 18 of the atmospheric gas is stopped. After InP is grown, the introduction of the growing gas is stopped, the atmospheric gas is quickly introduced to stop the grow. Accordingly, since the fine holes 16a formed surface is parallel to the substrate, the gas is supplied uniformly on the substrate, and the temperature distribution on the upper surface of the substrate is maintained similary, whereby a uniform thickness of the film is obtained.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1395279A JPS55107227A (en) | 1979-02-08 | 1979-02-08 | Device for growing of semiconductor in vapor phase |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1395279A JPS55107227A (en) | 1979-02-08 | 1979-02-08 | Device for growing of semiconductor in vapor phase |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55107227A true JPS55107227A (en) | 1980-08-16 |
JPS6217370B2 JPS6217370B2 (en) | 1987-04-17 |
Family
ID=11847537
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1395279A Granted JPS55107227A (en) | 1979-02-08 | 1979-02-08 | Device for growing of semiconductor in vapor phase |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55107227A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS573797A (en) * | 1980-06-09 | 1982-01-09 | Fujitsu Ltd | Vapor phase growing method of compound semiconductor and its vapor phase growing apparatus |
-
1979
- 1979-02-08 JP JP1395279A patent/JPS55107227A/en active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS573797A (en) * | 1980-06-09 | 1982-01-09 | Fujitsu Ltd | Vapor phase growing method of compound semiconductor and its vapor phase growing apparatus |
JPS6353160B2 (en) * | 1980-06-09 | 1988-10-21 | Fujitsu Ltd |
Also Published As
Publication number | Publication date |
---|---|
JPS6217370B2 (en) | 1987-04-17 |
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