JPS5556096A - Vapor phase growing method - Google Patents

Vapor phase growing method

Info

Publication number
JPS5556096A
JPS5556096A JP12852978A JP12852978A JPS5556096A JP S5556096 A JPS5556096 A JP S5556096A JP 12852978 A JP12852978 A JP 12852978A JP 12852978 A JP12852978 A JP 12852978A JP S5556096 A JPS5556096 A JP S5556096A
Authority
JP
Japan
Prior art keywords
grown
substrate
vapor
phase
furnace
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12852978A
Other languages
Japanese (ja)
Other versions
JPS5621757B2 (en
Inventor
Masaharu Nogami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP12852978A priority Critical patent/JPS5556096A/en
Publication of JPS5556096A publication Critical patent/JPS5556096A/en
Publication of JPS5621757B2 publication Critical patent/JPS5621757B2/ja
Granted legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE: To form a vapor-phase-grown film of a uniform thickness on the surface of a substrate by continuously reducing the temp. gradient in a furnace from the upper stream to the downstream of a gas flow direction in production of a semiconductor device by vapor-phase-growing various films.
CONSTITUTION: A substrate is set in a vapor phase growing furnace, a halogenated cpd. of a desired substance to be grown or an atomic or molecular substance to be grown is carried onto the substrate together with a carrier gas such as hydrogen or nitrogen, and the temp. gradient in the furnace along the gas flow direction is continuously reduced to grow a film. By this method the substance taking part in the reaction reaches all over the substrate surface at a uniform rate, and a grown film having a thickness uniformity degree of ±1.5% can be obtd. with high reproducibility.
COPYRIGHT: (C)1980,JPO&Japio
JP12852978A 1978-10-20 1978-10-20 Vapor phase growing method Granted JPS5556096A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12852978A JPS5556096A (en) 1978-10-20 1978-10-20 Vapor phase growing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12852978A JPS5556096A (en) 1978-10-20 1978-10-20 Vapor phase growing method

Publications (2)

Publication Number Publication Date
JPS5556096A true JPS5556096A (en) 1980-04-24
JPS5621757B2 JPS5621757B2 (en) 1981-05-21

Family

ID=14986995

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12852978A Granted JPS5556096A (en) 1978-10-20 1978-10-20 Vapor phase growing method

Country Status (1)

Country Link
JP (1) JPS5556096A (en)

Also Published As

Publication number Publication date
JPS5621757B2 (en) 1981-05-21

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