JPS5229171A - Process for crowing semiconductor crystal - Google Patents
Process for crowing semiconductor crystalInfo
- Publication number
- JPS5229171A JPS5229171A JP10574675A JP10574675A JPS5229171A JP S5229171 A JPS5229171 A JP S5229171A JP 10574675 A JP10574675 A JP 10574675A JP 10574675 A JP10574675 A JP 10574675A JP S5229171 A JPS5229171 A JP S5229171A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- substrate
- state
- period
- supporter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: During a period between T1, when dopant gas A is stopped and dopant gas B is just begin to flow, and T2, when gas B reached at a stedy state, mixture state of gases A and B in a reacter tube deteriorate crystal characteristics and smoothen distribution of carrier concentration. Therefore during this period, cover the substrate 3 embeded in the concave part 2 of the substrate supporter 1 by plate lid, which slides on the supporter 1, and expose the surface of the substrate 3 by sliding the plate lid 4 when gas B is in the steady state. This process prevents forming unfavourable crystal layer among the crystal layers.
COPYRIGHT: (C)1977,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10574675A JPS5229171A (en) | 1975-08-30 | 1975-08-30 | Process for crowing semiconductor crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10574675A JPS5229171A (en) | 1975-08-30 | 1975-08-30 | Process for crowing semiconductor crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5229171A true JPS5229171A (en) | 1977-03-04 |
JPS5550378B2 JPS5550378B2 (en) | 1980-12-17 |
Family
ID=14415812
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10574675A Granted JPS5229171A (en) | 1975-08-30 | 1975-08-30 | Process for crowing semiconductor crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5229171A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5558519A (en) * | 1978-10-24 | 1980-05-01 | Nec Corp | Vapor phase growth of 3-v group compound semiconductor |
JPS5635411A (en) * | 1979-08-31 | 1981-04-08 | Fujitsu Ltd | Epitaxial wafer of gallium arsenide and its manufacture |
JPS62198115A (en) * | 1986-02-25 | 1987-09-01 | Tohoku Metal Ind Ltd | Uniformly doping method into vapor growth layer |
JPH0328192A (en) * | 1989-06-26 | 1991-02-06 | Shin Etsu Handotai Co Ltd | Production of semiconductor wafer |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4946103A (en) * | 1972-09-14 | 1974-05-02 |
-
1975
- 1975-08-30 JP JP10574675A patent/JPS5229171A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4946103A (en) * | 1972-09-14 | 1974-05-02 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5558519A (en) * | 1978-10-24 | 1980-05-01 | Nec Corp | Vapor phase growth of 3-v group compound semiconductor |
JPS5635411A (en) * | 1979-08-31 | 1981-04-08 | Fujitsu Ltd | Epitaxial wafer of gallium arsenide and its manufacture |
JPS62198115A (en) * | 1986-02-25 | 1987-09-01 | Tohoku Metal Ind Ltd | Uniformly doping method into vapor growth layer |
JPH0328192A (en) * | 1989-06-26 | 1991-02-06 | Shin Etsu Handotai Co Ltd | Production of semiconductor wafer |
Also Published As
Publication number | Publication date |
---|---|
JPS5550378B2 (en) | 1980-12-17 |
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