JPS5229171A - Process for crowing semiconductor crystal - Google Patents

Process for crowing semiconductor crystal

Info

Publication number
JPS5229171A
JPS5229171A JP10574675A JP10574675A JPS5229171A JP S5229171 A JPS5229171 A JP S5229171A JP 10574675 A JP10574675 A JP 10574675A JP 10574675 A JP10574675 A JP 10574675A JP S5229171 A JPS5229171 A JP S5229171A
Authority
JP
Japan
Prior art keywords
gas
substrate
state
period
supporter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10574675A
Other languages
Japanese (ja)
Other versions
JPS5550378B2 (en
Inventor
Akihiro Shibatomi
Kenya Nakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10574675A priority Critical patent/JPS5229171A/en
Publication of JPS5229171A publication Critical patent/JPS5229171A/en
Publication of JPS5550378B2 publication Critical patent/JPS5550378B2/ja
Granted legal-status Critical Current

Links

Abstract

PURPOSE: During a period between T1, when dopant gas A is stopped and dopant gas B is just begin to flow, and T2, when gas B reached at a stedy state, mixture state of gases A and B in a reacter tube deteriorate crystal characteristics and smoothen distribution of carrier concentration. Therefore during this period, cover the substrate 3 embeded in the concave part 2 of the substrate supporter 1 by plate lid, which slides on the supporter 1, and expose the surface of the substrate 3 by sliding the plate lid 4 when gas B is in the steady state. This process prevents forming unfavourable crystal layer among the crystal layers.
COPYRIGHT: (C)1977,JPO&Japio
JP10574675A 1975-08-30 1975-08-30 Process for crowing semiconductor crystal Granted JPS5229171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10574675A JPS5229171A (en) 1975-08-30 1975-08-30 Process for crowing semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10574675A JPS5229171A (en) 1975-08-30 1975-08-30 Process for crowing semiconductor crystal

Publications (2)

Publication Number Publication Date
JPS5229171A true JPS5229171A (en) 1977-03-04
JPS5550378B2 JPS5550378B2 (en) 1980-12-17

Family

ID=14415812

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10574675A Granted JPS5229171A (en) 1975-08-30 1975-08-30 Process for crowing semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS5229171A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5558519A (en) * 1978-10-24 1980-05-01 Nec Corp Vapor phase growth of 3-v group compound semiconductor
JPS5635411A (en) * 1979-08-31 1981-04-08 Fujitsu Ltd Epitaxial wafer of gallium arsenide and its manufacture
JPS62198115A (en) * 1986-02-25 1987-09-01 Tohoku Metal Ind Ltd Uniformly doping method into vapor growth layer
JPH0328192A (en) * 1989-06-26 1991-02-06 Shin Etsu Handotai Co Ltd Production of semiconductor wafer

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946103A (en) * 1972-09-14 1974-05-02

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4946103A (en) * 1972-09-14 1974-05-02

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5558519A (en) * 1978-10-24 1980-05-01 Nec Corp Vapor phase growth of 3-v group compound semiconductor
JPS5635411A (en) * 1979-08-31 1981-04-08 Fujitsu Ltd Epitaxial wafer of gallium arsenide and its manufacture
JPS62198115A (en) * 1986-02-25 1987-09-01 Tohoku Metal Ind Ltd Uniformly doping method into vapor growth layer
JPH0328192A (en) * 1989-06-26 1991-02-06 Shin Etsu Handotai Co Ltd Production of semiconductor wafer

Also Published As

Publication number Publication date
JPS5550378B2 (en) 1980-12-17

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