JPS5375857A - Vapor phase growth apparatus - Google Patents

Vapor phase growth apparatus

Info

Publication number
JPS5375857A
JPS5375857A JP15239276A JP15239276A JPS5375857A JP S5375857 A JPS5375857 A JP S5375857A JP 15239276 A JP15239276 A JP 15239276A JP 15239276 A JP15239276 A JP 15239276A JP S5375857 A JPS5375857 A JP S5375857A
Authority
JP
Japan
Prior art keywords
vapor phase
phase growth
growth apparatus
circumferential part
central part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15239276A
Other languages
Japanese (ja)
Inventor
Osamu Mizuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP15239276A priority Critical patent/JPS5375857A/en
Publication of JPS5375857A publication Critical patent/JPS5375857A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45585—Compression of gas before it reaches the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To obviate the occurrence of unevenness in the thickness of the film grown on the wafers disposed at the center and circumferential part of a wafer susceptor by changing the shape of a bell-jar to make the height of its celling lower at the central part and higher at the circumferential part and providing gas blow ports on the circumferential part and a gas exhaust port at the central part.
JP15239276A 1976-12-17 1976-12-17 Vapor phase growth apparatus Pending JPS5375857A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15239276A JPS5375857A (en) 1976-12-17 1976-12-17 Vapor phase growth apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15239276A JPS5375857A (en) 1976-12-17 1976-12-17 Vapor phase growth apparatus

Publications (1)

Publication Number Publication Date
JPS5375857A true JPS5375857A (en) 1978-07-05

Family

ID=15539503

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15239276A Pending JPS5375857A (en) 1976-12-17 1976-12-17 Vapor phase growth apparatus

Country Status (1)

Country Link
JP (1) JPS5375857A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6191095A (en) * 1984-10-08 1986-05-09 Matsushita Electric Ind Co Ltd Tube reactor for vapor phase crystal growth
WO2003048430A1 (en) * 2001-11-27 2003-06-12 Osram Opto Semiconductors Gmbh Device and method for producing, removing or treating layers on a substrate
WO2003048414A1 (en) * 2001-12-04 2003-06-12 Primaxx, Inc. Chemical vapor deposition reactor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6191095A (en) * 1984-10-08 1986-05-09 Matsushita Electric Ind Co Ltd Tube reactor for vapor phase crystal growth
WO2003048430A1 (en) * 2001-11-27 2003-06-12 Osram Opto Semiconductors Gmbh Device and method for producing, removing or treating layers on a substrate
WO2003048414A1 (en) * 2001-12-04 2003-06-12 Primaxx, Inc. Chemical vapor deposition reactor

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