JPS52140274A - Pressure-reduction vapor growth method - Google Patents

Pressure-reduction vapor growth method

Info

Publication number
JPS52140274A
JPS52140274A JP5651676A JP5651676A JPS52140274A JP S52140274 A JPS52140274 A JP S52140274A JP 5651676 A JP5651676 A JP 5651676A JP 5651676 A JP5651676 A JP 5651676A JP S52140274 A JPS52140274 A JP S52140274A
Authority
JP
Japan
Prior art keywords
pressure
growth method
vapor growth
reduction vapor
reduction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5651676A
Other languages
Japanese (ja)
Inventor
Akira Shintani
Michio Suzuki
Michiyoshi Maki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5651676A priority Critical patent/JPS52140274A/en
Publication of JPS52140274A publication Critical patent/JPS52140274A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon

Abstract

PURPOSE:To obtain the cilicate glass film on the desired substrate through the pressure-reduction vapor growth method by selecting the flow amount ratio between oxygen and monosilane.
JP5651676A 1976-05-19 1976-05-19 Pressure-reduction vapor growth method Pending JPS52140274A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5651676A JPS52140274A (en) 1976-05-19 1976-05-19 Pressure-reduction vapor growth method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5651676A JPS52140274A (en) 1976-05-19 1976-05-19 Pressure-reduction vapor growth method

Publications (1)

Publication Number Publication Date
JPS52140274A true JPS52140274A (en) 1977-11-22

Family

ID=13029276

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5651676A Pending JPS52140274A (en) 1976-05-19 1976-05-19 Pressure-reduction vapor growth method

Country Status (1)

Country Link
JP (1) JPS52140274A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5723216A (en) * 1980-07-17 1982-02-06 Matsushita Electric Ind Co Ltd Manufacture of plasma reactor and semiconductor element
JPS61156741A (en) * 1984-12-28 1986-07-16 Fujitsu Ltd Method for formation of phosphosilicate film
JPH02168622A (en) * 1989-01-06 1990-06-28 Seiko Epson Corp Semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5723216A (en) * 1980-07-17 1982-02-06 Matsushita Electric Ind Co Ltd Manufacture of plasma reactor and semiconductor element
JPS6322057B2 (en) * 1980-07-17 1988-05-10 Matsushita Electric Ind Co Ltd
JPS61156741A (en) * 1984-12-28 1986-07-16 Fujitsu Ltd Method for formation of phosphosilicate film
JPH02168622A (en) * 1989-01-06 1990-06-28 Seiko Epson Corp Semiconductor device

Similar Documents

Publication Publication Date Title
JPS52144992A (en) Light receiving element
JPS52140274A (en) Pressure-reduction vapor growth method
JPS51136288A (en) Photo etching using non-crystalline carchogenide glass thin film
JPS5411674A (en) Semiconductor device of mesa type
JPS5351964A (en) Selective growth method for semiconductor crystal
JPS5211860A (en) Liquid phase epitaxial device
JPS5290281A (en) Semiconductor laser device
JPS5364816A (en) Manufacturing process of a container to contain liquids of different kindswith diaphragm
JPS52154344A (en) Impurity diffusion method
JPS5333580A (en) Production of semiconductor device
JPS5293269A (en) Doping method for impurity in vapour deposited semiconductor
JPS5298473A (en) Thin film material
JPS52132675A (en) Vapor-phase growth method of thin film
JPS5288276A (en) Liquid-phase epitaxial growth
JPS5227452A (en) Light polyolefin composition
JPS51126037A (en) Semiconductor crystal growth method
JPS5354973A (en) Semiconductor device and its production
JPS5380973A (en) Manufacture of mask
JPS53115183A (en) Production of semiconductor device
JPS52134470A (en) Hard quality glass used on watches
JPS52116194A (en) Electro chromic display cell
JPS5318954A (en) Diffusing process of impurity
JPS5421184A (en) Manufacture for light emitting element
JPS53112668A (en) Preparing method for oxide film
JPS52109893A (en) Manufacture for photo integration circuit