JPS52132675A - Vapor-phase growth method of thin film - Google Patents

Vapor-phase growth method of thin film

Info

Publication number
JPS52132675A
JPS52132675A JP4850776A JP4850776A JPS52132675A JP S52132675 A JPS52132675 A JP S52132675A JP 4850776 A JP4850776 A JP 4850776A JP 4850776 A JP4850776 A JP 4850776A JP S52132675 A JPS52132675 A JP S52132675A
Authority
JP
Japan
Prior art keywords
thin film
vapor
growth method
phase growth
wafers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4850776A
Other languages
Japanese (ja)
Other versions
JPS5512732B2 (en
Inventor
Daijiro Kudo
Kazuo Maeda
Yoshiki Tanigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP4850776A priority Critical patent/JPS52132675A/en
Priority to US05/787,495 priority patent/US4179326A/en
Priority to SE7704276A priority patent/SE432162B/en
Priority to GB16011/77A priority patent/GB1575578A/en
Priority to IT22668/77A priority patent/IT1114781B/en
Priority to DE2718026A priority patent/DE2718026C3/en
Priority to FR7712288A priority patent/FR2348983A1/en
Publication of JPS52132675A publication Critical patent/JPS52132675A/en
Publication of JPS5512732B2 publication Critical patent/JPS5512732B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

Abstract

PURPOSE:To form uniform thin film on the surfaces of wafers by setting as specified the interval of wafers arranged in the reaction tube, the gap between wafers and the inside wall and the average pressure in the tube.
JP4850776A 1976-04-22 1976-04-30 Vapor-phase growth method of thin film Granted JPS52132675A (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP4850776A JPS52132675A (en) 1976-04-30 1976-04-30 Vapor-phase growth method of thin film
US05/787,495 US4179326A (en) 1976-04-22 1977-04-14 Process for the vapor growth of a thin film
SE7704276A SE432162B (en) 1976-04-22 1977-04-14 PROCEDURE TO MAKE A THIN FILM TO GROW OUT
GB16011/77A GB1575578A (en) 1976-04-22 1977-04-18 Process for the vapour deposition of a thin film
IT22668/77A IT1114781B (en) 1976-04-22 1977-04-20 PROCESS FOR THE INCREASE, FROM STEAM PHASE, OF A THIN FILM
DE2718026A DE2718026C3 (en) 1976-04-22 1977-04-22 Process for coating semiconductor wafers from the vapor phase and their application
FR7712288A FR2348983A1 (en) 1976-04-22 1977-04-22 PROCESS FOR DEPOSITING A THIN LAYER IN STEAM FORM

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4850776A JPS52132675A (en) 1976-04-30 1976-04-30 Vapor-phase growth method of thin film

Publications (2)

Publication Number Publication Date
JPS52132675A true JPS52132675A (en) 1977-11-07
JPS5512732B2 JPS5512732B2 (en) 1980-04-03

Family

ID=12805278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4850776A Granted JPS52132675A (en) 1976-04-22 1976-04-30 Vapor-phase growth method of thin film

Country Status (1)

Country Link
JP (1) JPS52132675A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6035536U (en) * 1983-08-18 1985-03-11 九州日本電気株式会社 Reduced pressure vapor phase growth equipment

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4626336A (en) * 1985-05-02 1986-12-02 Hewlett Packard Company Target for sputter depositing thin films

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6035536U (en) * 1983-08-18 1985-03-11 九州日本電気株式会社 Reduced pressure vapor phase growth equipment

Also Published As

Publication number Publication date
JPS5512732B2 (en) 1980-04-03

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