JPS54110987A - Gaseous growing of semiconductor - Google Patents

Abstract

PURPOSE: A crystal for an FET is provided with an active layer of excellent crystallinity and a steep carrier concentration distribution. The process comprises the steps of a first supply of major crystal components which are a single element or compound (A) and a doping gas, a second interruption of the same supply, a third introduction of another doping gas to replace the atmosphere, and a fourth resupply of the first material (A).

CONSTITUTION: A substrate 4 is placed on the supporter 5, and an inert carrier gas is introduced through the pipe 8 into the reaction tube 1, then the heater 7 temperature is increased. When the temperature equilibrium reaches a selected value in the tube 1, AsCl₃ from the pipe 9 and a doping gas containing impurities such as Fe, Cr from the pipe 10 are simultaneously introduced. These gases are mixed with vapor of Ga solution from the boats 2, and the mixed gas is used to grow a high resistance buffer layer on the substrate 4. When the buffer layer is completed, the supply of AsCl is discontinued, and a doping gas containing impurities such as S, Se is introduced from the pipe 10 to replace the atomosphere in the tube 1. Next, AsCl₃ supply is resumed to grow an active layer crystal.

COPYRIGHT: (C)1979,JPO&Japio