JPS5456358A - Vapor phase growth method of compound semiconductor crystal - Google Patents

Vapor phase growth method of compound semiconductor crystal

Info

Publication number
JPS5456358A
JPS5456358A JP11576577A JP11576577A JPS5456358A JP S5456358 A JPS5456358 A JP S5456358A JP 11576577 A JP11576577 A JP 11576577A JP 11576577 A JP11576577 A JP 11576577A JP S5456358 A JPS5456358 A JP S5456358A
Authority
JP
Japan
Prior art keywords
source
layers
undoped
concentration
impurity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11576577A
Other languages
Japanese (ja)
Other versions
JPS5535847B2 (en
Inventor
Junji Komeno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11576577A priority Critical patent/JPS5456358A/en
Publication of JPS5456358A publication Critical patent/JPS5456358A/en
Publication of JPS5535847B2 publication Critical patent/JPS5535847B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Junction Field-Effect Transistors (AREA)

Abstract

PURPOSE: To make non-doped layers of a constant low carrier concentration at the time of repeatedly growing undoped low carrier concentration layers and doped high concentration layers with the same Ga source by heating the Ga source in high purity H2 before the growth of the impurity undoped layers.
CONSTITUTION: A specified temperature distribution is formed by putting Ga 3 in a boat 2 in N2 gas. When the Ga source is at 850°C, the inside of a reaction tube 1 is substituted with high purity H2 and H2 is flowed at 1l per minute to perform treatment for about 2 hours thereby removing the impurities of the Ga source. After H2 is stopped, AsCl5 5 is introduced with N2 as a carrier. After As is saturated in the Ga source, a buffer layer undoped with any impurity is grown on a Gas substrate 7. Next, impurity doped gas is flowed into the tube to allow an active layer of a high concentration to grow to a specified thickness. The substrate 7 is withdrawn after cooling. As a result of these repetitions, the carrier concentrations of the respective undoped layers become of a constant low concentration
COPYRIGHT: (C)1979,JPO&Japio
JP11576577A 1977-09-27 1977-09-27 Vapor phase growth method of compound semiconductor crystal Granted JPS5456358A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11576577A JPS5456358A (en) 1977-09-27 1977-09-27 Vapor phase growth method of compound semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11576577A JPS5456358A (en) 1977-09-27 1977-09-27 Vapor phase growth method of compound semiconductor crystal

Publications (2)

Publication Number Publication Date
JPS5456358A true JPS5456358A (en) 1979-05-07
JPS5535847B2 JPS5535847B2 (en) 1980-09-17

Family

ID=14670484

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11576577A Granted JPS5456358A (en) 1977-09-27 1977-09-27 Vapor phase growth method of compound semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS5456358A (en)

Also Published As

Publication number Publication date
JPS5535847B2 (en) 1980-09-17

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