JPS5456358A - Vapor phase growth method of compound semiconductor crystal - Google Patents
Vapor phase growth method of compound semiconductor crystalInfo
- Publication number
- JPS5456358A JPS5456358A JP11576577A JP11576577A JPS5456358A JP S5456358 A JPS5456358 A JP S5456358A JP 11576577 A JP11576577 A JP 11576577A JP 11576577 A JP11576577 A JP 11576577A JP S5456358 A JPS5456358 A JP S5456358A
- Authority
- JP
- Japan
- Prior art keywords
- source
- layers
- undoped
- concentration
- impurity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
PURPOSE: To make non-doped layers of a constant low carrier concentration at the time of repeatedly growing undoped low carrier concentration layers and doped high concentration layers with the same Ga source by heating the Ga source in high purity H2 before the growth of the impurity undoped layers.
CONSTITUTION: A specified temperature distribution is formed by putting Ga 3 in a boat 2 in N2 gas. When the Ga source is at 850°C, the inside of a reaction tube 1 is substituted with high purity H2 and H2 is flowed at 1l per minute to perform treatment for about 2 hours thereby removing the impurities of the Ga source. After H2 is stopped, AsCl5 5 is introduced with N2 as a carrier. After As is saturated in the Ga source, a buffer layer undoped with any impurity is grown on a Gas substrate 7. Next, impurity doped gas is flowed into the tube to allow an active layer of a high concentration to grow to a specified thickness. The substrate 7 is withdrawn after cooling. As a result of these repetitions, the carrier concentrations of the respective undoped layers become of a constant low concentration
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11576577A JPS5456358A (en) | 1977-09-27 | 1977-09-27 | Vapor phase growth method of compound semiconductor crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11576577A JPS5456358A (en) | 1977-09-27 | 1977-09-27 | Vapor phase growth method of compound semiconductor crystal |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5456358A true JPS5456358A (en) | 1979-05-07 |
JPS5535847B2 JPS5535847B2 (en) | 1980-09-17 |
Family
ID=14670484
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11576577A Granted JPS5456358A (en) | 1977-09-27 | 1977-09-27 | Vapor phase growth method of compound semiconductor crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5456358A (en) |
-
1977
- 1977-09-27 JP JP11576577A patent/JPS5456358A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5535847B2 (en) | 1980-09-17 |
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