JPS5527638A - Method of manufacturing compound semiconductor crystal base - Google Patents

Method of manufacturing compound semiconductor crystal base

Info

Publication number
JPS5527638A
JPS5527638A JP10066578A JP10066578A JPS5527638A JP S5527638 A JPS5527638 A JP S5527638A JP 10066578 A JP10066578 A JP 10066578A JP 10066578 A JP10066578 A JP 10066578A JP S5527638 A JPS5527638 A JP S5527638A
Authority
JP
Japan
Prior art keywords
single crystal
impurity
inp
wafers
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10066578A
Other languages
Japanese (ja)
Inventor
Kenzo Akita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10066578A priority Critical patent/JPS5527638A/en
Publication of JPS5527638A publication Critical patent/JPS5527638A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To obtain a single crystal base of low transition density and low carrier concentration, by adding an impurity in high concentration and reducing an impurity of a large diffusion coefficient from the surface by evaporation in the next stage of processing, in growing a single crystal.
CONSTITUTION: Polycrystalline InP compound, about 200g, zinc of a large diffusion coefficient, about 20mg, and tin, about 100mg, which is a conducting impurity, are placed in a high-frequency heating crucible, and thereby InP single crystal bulk is grown by pulling by using a single crystal pulling furnace. The single crystal bulk is cut into wafers, 500μm thick. Then, etching is operated. To prevent the diffusion of the phosphorus component of the InP base outside at the time of heat treatment, wafers 2 are placed in quartz ampoule 1 to which red phosphorus 3 is added. Then it is exhausted and sealed. Heat treatment is operated for 130 hours at the temperature of ampoule 1 700°C.
COPYRIGHT: (C)1980,JPO&Japio
JP10066578A 1978-08-18 1978-08-18 Method of manufacturing compound semiconductor crystal base Pending JPS5527638A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10066578A JPS5527638A (en) 1978-08-18 1978-08-18 Method of manufacturing compound semiconductor crystal base

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10066578A JPS5527638A (en) 1978-08-18 1978-08-18 Method of manufacturing compound semiconductor crystal base

Publications (1)

Publication Number Publication Date
JPS5527638A true JPS5527638A (en) 1980-02-27

Family

ID=14280075

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10066578A Pending JPS5527638A (en) 1978-08-18 1978-08-18 Method of manufacturing compound semiconductor crystal base

Country Status (1)

Country Link
JP (1) JPS5527638A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6072216A (en) * 1983-08-29 1985-04-24 ウエスチングハウス　エレクトリック　コ−ポレ−ション Method of treating semiconductor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6072216A (en) * 1983-08-29 1985-04-24 ウエスチングハウス　エレクトリック　コ−ポレ−ション Method of treating semiconductor

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