JPS5350973A - Vapor phase growth method and vapor phase growth apparatus - Google Patents

Vapor phase growth method and vapor phase growth apparatus

Info

Publication number
JPS5350973A
JPS5350973A JP12661076A JP12661076A JPS5350973A JP S5350973 A JPS5350973 A JP S5350973A JP 12661076 A JP12661076 A JP 12661076A JP 12661076 A JP12661076 A JP 12661076A JP S5350973 A JPS5350973 A JP S5350973A
Authority
JP
Japan
Prior art keywords
vapor phase
phase growth
occur
region
growth method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12661076A
Other languages
Japanese (ja)
Inventor
Kosuke Yasuno
Tatsunori Nakashima
Kosei Kajiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP12661076A priority Critical patent/JPS5350973A/en
Publication of JPS5350973A publication Critical patent/JPS5350973A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45508—Radial flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans

Abstract

PURPOSE:To remove unnecessary impurity atoms produced from wafers to be grown and suppress autodoping by dividing gas lines to two lines of a region where vapor phase growth reaction tends to occur and a region where purge effect tends to occur.
JP12661076A 1976-10-20 1976-10-20 Vapor phase growth method and vapor phase growth apparatus Pending JPS5350973A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12661076A JPS5350973A (en) 1976-10-20 1976-10-20 Vapor phase growth method and vapor phase growth apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12661076A JPS5350973A (en) 1976-10-20 1976-10-20 Vapor phase growth method and vapor phase growth apparatus

Publications (1)

Publication Number Publication Date
JPS5350973A true JPS5350973A (en) 1978-05-09

Family

ID=14939447

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12661076A Pending JPS5350973A (en) 1976-10-20 1976-10-20 Vapor phase growth method and vapor phase growth apparatus

Country Status (1)

Country Link
JP (1) JPS5350973A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5814540A (en) * 1981-07-17 1983-01-27 Nippon Telegr & Teleph Corp <Ntt> Preparing method and device for thin film
JPS5999716A (en) * 1982-11-29 1984-06-08 Agency Of Ind Science & Technol Multi-stage thin-film forming apparatus
JPS60123022A (en) * 1983-12-08 1985-07-01 Fujitsu Ltd Vapor growth method
JPH0227742A (en) * 1988-07-15 1990-01-30 Fujitsu Ltd Vapor epitaxially growing apparatus

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5814540A (en) * 1981-07-17 1983-01-27 Nippon Telegr & Teleph Corp <Ntt> Preparing method and device for thin film
JPS5999716A (en) * 1982-11-29 1984-06-08 Agency Of Ind Science & Technol Multi-stage thin-film forming apparatus
JPH0241165B2 (en) * 1982-11-29 1990-09-14 Kogyo Gijutsuin
JPS60123022A (en) * 1983-12-08 1985-07-01 Fujitsu Ltd Vapor growth method
JPH0586643B2 (en) * 1983-12-08 1993-12-13 Fujitsu Ltd
JPH0227742A (en) * 1988-07-15 1990-01-30 Fujitsu Ltd Vapor epitaxially growing apparatus

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