JPS60123022A - Vapor growth method - Google Patents
Vapor growth methodInfo
- Publication number
- JPS60123022A JPS60123022A JP23180583A JP23180583A JPS60123022A JP S60123022 A JPS60123022 A JP S60123022A JP 23180583 A JP23180583 A JP 23180583A JP 23180583 A JP23180583 A JP 23180583A JP S60123022 A JPS60123022 A JP S60123022A
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- Prior art keywords
- reaction
- substrate
- susceptor
- chamber
- reaction chamber
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
（ａ）発明の技術分野
本発明はＣＶＤ （Ｃｈｅｍｉｃａｌ Ｖａｐｏｕｒ
Ｄｅｐｏｓｉｔｉｏｎ）法による半導体膜生成をなす気
相成長方法に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Technical field of the invention The present invention relates to CVD (Chemical Vapor
The present invention relates to a vapor phase growth method for producing a semiconductor film using a deposition method.
（ｂ）技術の背景
ヘテロ接合を利用した半導体デバイスでは、接合界面の
ドーピングプロファイルを厳密に制御する必要があり、
特に超格子デバイスでは分子線源によるビーム蒸着法が
用いられるが量産性に難点があり、 ＧａＡｓ系又はＩ
ｎＰ系デバイスの製作にはＨＯＣＶＤと称されるＣＶＤ
法が適用されつつある。ＨＯＣＶＤ法では反応ガスとし
て有機金属を用いるものであり取扱いの簡便さから広い
応用が期待されてい−る。(b) Technical background In semiconductor devices using heterojunctions, it is necessary to strictly control the doping profile at the junction interface.
In particular, beam evaporation using a molecular beam source is used for superlattice devices, but there are difficulties in mass production.
CVD called HOCVD is used to manufacture nP-based devices.
The law is being applied. The HOCVD method uses an organic metal as a reaction gas and is expected to find wide application because of its ease of handling.
（Ｃ）従来技術と問題点
従来この種のＨＯＣＶＤ法に於いて９反応管内を原料ガ
ス流方向に複数分割し１分割の各室に異成分のガス流を
付与して基板成膜の条件を個別に制御する多室法とよば
れる方法がある。(C) Conventional technology and problems Conventionally, in this type of HOCVD method, the inside of 9 reaction tubes is divided into multiple chambers in the direction of raw material gas flow, and gas flows of different components are applied to each divided chamber to control the conditions for substrate film formation. There is a method called the multi-chamber method that controls each chamber individually.
前記多室法は１反応管を石英壁で分割し、各室間は完全
に分４＋１独立するが、管内一部を分割しない領域とし
、ここで異室間の基板移動をすることが一般的に行なわ
れている。In the multi-chamber method, one reaction tube is divided by a quartz wall, and each chamber is completely independent by 4+1, but it is common to use a part of the tube as an undivided area to transfer substrates between different chambers. is being carried out.
しかしながら、前記構成の気相成長反応管は。However, the vapor phase growth reaction tube with the above configuration.
（１）成長位置と基板退避位置が離れている為。(1) The growth position and substrate retraction position are far apart.
移動に時間がかかる。又１反復して基板移動をなす操作
が比較的大変である。It takes time to move. Furthermore, the operation of moving the substrate repeatedly is relatively difficult.
（２）基板移動時、成長条件と異なる場所を通過させね
ばならない。(2) When moving the substrate, it must pass through a location different from the growth conditions.
（３）前記（］）項に関連して特に高周波加熱のカーボ
ンサセプタ（基板支持盤）等を用いる場合、基板温度が
変化する可能性がある。(3) In relation to the above item ( ), especially when using a carbon susceptor (substrate support board) etc. heated by high frequency, there is a possibility that the substrate temperature changes.
等、気相膜成長の観点から諸種の問題がある。There are various problems from the viewpoint of vapor phase film growth.
（ｄ）発明の目的 本発明の目的は、前記の問題点を解決することである。(d) Purpose of the invention The purpose of the present invention is to solve the above-mentioned problems.
本発明は多層の化合物半導体素子など特に、急峻な接合
界面及びドーピングプロファイルを形成する気相成長方
法を提示することにある。The present invention provides a vapor phase growth method for forming steep junction interfaces and doping profiles, especially in multilayer compound semiconductor devices.
（ｅ）発明の構成
前記目的は１反応室を複数に分割する仕切板と一体とな
り１分割された反応室部分に延びた固定発熱体を設け、
該固定発熱体上を分割された反応室部分に移動可能な発
熱体よりなるサセプタを設け１分割された反応室部分に
各々種類の異なる反応ガスを供給すると共に２反応処理
中一方の反応室部分から他方の反応室部分へ基板を移動
させて異なる種類の成長膜を生成させることにより達成
される。(e) Structure of the invention The above object is to provide a fixed heating element that is integrated with a partition plate that divides one reaction chamber into a plurality of parts and extends into one divided reaction chamber part,
A susceptor made of a movable heating element is provided on the fixed heating element in the divided reaction chamber part, and a different type of reaction gas is supplied to each divided reaction chamber part, and one reaction chamber part is used during two reactions. This is accomplished by moving the substrate from one reaction chamber section to another to produce different types of growth films.
（ｆ）発明の実施例
以下１本発明の多室分割の反応管に於ける隔壁部の構成
と、高周波コイル時の基板温度を一定に保ちながら膜成
長条件の瞬時的変化が可能であり。(f) Embodiments of the Invention The following 1 structure of the partition wall in the multi-chamber divided reaction tube of the present invention makes it possible to instantaneously change the film growth conditions while keeping the substrate temperature constant during the high-frequency coil.
各反応室間を移動させる基板の回転またはスライド機構
を具えるカーボンサセプタを有する反応管実施例を第１
図〜第６図に従って詳細に説明する。A first embodiment of a reaction tube having a carbon susceptor with a rotating or sliding mechanism for a substrate to be moved between reaction chambers is shown.
This will be explained in detail according to FIGS.
第１図は９例えばＧａＡｓ基板上にＧａＡｓバッファ層
とＧａＡｓ−ＦＥＴ動作層などを成膜する縦型多室反応
管実施例を示す簡略斜視図である。FIG. 1 is a simplified perspective view showing an embodiment of a vertical multi-chamber reaction tube in which, for example, a GaAs buffer layer and a GaAs-FET operating layer are formed on a GaAs substrate.
該反応管の構成は次の通り。The configuration of the reaction tube is as follows.
第１図図中、１は石英製の反応管、２は反応管１と同軸
配置されたその内部が二車に分割された石英ライナ管、
３はライナ管中央部にある石英分割壁、４は石英壁３と
連続してその下方に設けるカーボンサセプタ（固定の仕
切板）、５は前記カーボンサセプタ４の窓開部で二車に
跨る窓、６は気相成長対象の半導体基板、７は前記基板
６の収納凹部を具えかつ二車に跨り基板を露出するカー
ボンサセプタ（可動部）であってその下方は石英製回転
軸８に連接される。９は前記の固定仕切板或いは仕切壁
４と一体的に形成された前記可動サセプタ７に対する支
承部で、該支承部は分割の各反応室に跨っている。In Fig. 1, 1 is a quartz reaction tube, 2 is a quartz liner tube coaxially arranged with the reaction tube 1 and whose interior is divided into two wheels;
3 is a quartz partition wall in the center of the liner pipe, 4 is a carbon susceptor (fixed partition plate) provided below the quartz wall 3, and 5 is a window opening in the carbon susceptor 4 that spans the two cars. , 6 is a semiconductor substrate to be vapor-phase grown, and 7 is a carbon susceptor (movable part) that has a recess for storing the substrate 6 and exposes the substrate across two wheels, and its lower part is connected to a rotating shaft 8 made of quartz. Ru. Reference numeral 9 denotes a support portion for the movable susceptor 7 formed integrally with the fixed partition plate or partition wall 4, and the support portion spans each of the divided reaction chambers.
前記半導体（たとえばＧａＡｓ） ６が装着されるサセ
プタ構成部分はカーボンであるため加工が容易で且つ二
車分離の壁構造等精密な加工が出来るため室間のガス洩
れを非常に小さくし得る。又サセプタ７と支承部９間の
スライド潤滑性にも優れ、る為、基板６の加熱温度を一
定に保持したままで基板６の室間移動ならびに移動の繰
り返しもたやすい。Since the susceptor component to which the semiconductor (for example, GaAs) 6 is attached is made of carbon, it is easy to process, and the wall structure separating the two wheels can be precisely processed, so that gas leakage between the chambers can be made very small. Furthermore, since the sliding lubricity between the susceptor 7 and the support portion 9 is excellent, it is easy to move the substrate 6 between rooms and repeat the movement while keeping the heating temperature of the substrate 6 constant.
又、１０と１１は分割壁で仕切られた二車それぞれに異
なる成膜反応ガス体を流すガス管、１２は石英反応管１
外周配置の高周波コイル、１３はステンレス製のマニホ
ールド、１４はガス吸気管、及び１５は前記可動側サセ
プタ７に対する基板の室間移動制御部であって前記軸８
と連結される。Further, 10 and 11 are gas pipes that flow different film-forming reaction gases into two wheels separated by a dividing wall, and 12 is a quartz reaction tube 1.
13 is a stainless steel manifold, 14 is a gas intake pipe, and 15 is a chamber-to-room movement control unit for the substrate relative to the movable susceptor 7, which is connected to the shaft 8.
is connected with.
マニホールド１３は、複数分割のライナ管２内ガスを重
役気管１４へ連接する。併し上下のマニホールド締結リ
ング１６を緩めれば１反応管内のう・イナ管２を下方に
引出すことが出来ると共にライナ管から前記サセプタ組
立体を管軸に沿って引出し加工対象基板６を取り出すこ
とが出来る。The manifold 13 connects the gas in the plurally divided liner pipes 2 to the executive trachea 14 . However, by loosening the upper and lower manifold fastening rings 16, the inner tube 2 in one reaction tube can be pulled out downward, and the susceptor assembly can be pulled out from the liner tube along the tube axis to take out the substrate 6 to be processed. I can do it.
第２図は、気相成長基板６を収納するカーボンサセプタ
分割壁４の要部構成を示す側面図、及び第３図は第２図
基板サセプタの上面図である。FIG. 2 is a side view showing the main structure of the carbon susceptor dividing wall 4 that accommodates the vapor growth substrate 6, and FIG. 3 is a top view of the substrate susceptor shown in FIG.
図中、１７は可動サセプタ７に設ける基板６収納の凹み
エフである。可動サセプタ７は室間移動制御部１５と軸
８により駆動され、サセプタ分割壁４の二車に跨る窓５
を経て左右空間への自在な速度で移動が可能となる。In the figure, 17 is a recess F provided in the movable susceptor 7 to accommodate the substrate 6. The movable susceptor 7 is driven by an inter-room movement control unit 15 and a shaft 8, and is moved by a window 5 that spans two wheels of the susceptor dividing wall 4.
Through this, it becomes possible to move to the left and right in space at any speed.
係る構成の多室（図示は二車の例）反応管を用いて行う
成膜対象例を以下に述べる。An example of a film to be formed using a multi-chamber (two-wheeled example shown) reaction tube having such a configuration will be described below.
て、水素、アルシン＾ｓＨ３，及びトリメチルガリウ成
長するための反応ガス、水素、アルシン、 ＴＭＧ。Hydrogen, arsine^sH3, and trimethylgallium, hydrogen, arsine, and TMG as reaction gases for growth.
及び硫化水素Ｈ２Ｓが供給される。反応管内、 ＧａＡ
ｓ基板５収納の可動サセプタ７とサセプタ支承ｇ■９は
、高周波コイルにより温度約７００°Ｃに加熱される。and hydrogen sulfide H2S are supplied. Inside the reaction tube, GaA
The movable susceptor 7 and the susceptor support g9 housed in the s-substrate 5 are heated to a temperature of approximately 700°C by a high-frequency coil.
係る状態で２時間をコントロールして前記一方の管掌で
ノンドープＧａＡｓ膜を成長させた１麦、・軸８により
可動サセプタ７を半回転して基板をＩ舜１？ｉ的に他方
の管掌に移動することで瞬時に然も基板温度をかえるこ
とな（ｎ−ＧａＡｓ膜の成長に切り変えることが出来る
。A non-doped GaAs film was grown on one of the tubes under such conditions for 2 hours under control.The movable susceptor 7 was turned half a turn by the shaft 8 and the substrate was placed on the tube 1. By automatically moving to the other control point, it is possible to switch to growth of an n-GaAs film instantaneously and without changing the substrate temperature.
斯くしてＰＥＴバッファ層とＦＥＴ動作層との界面を急
峻に形成し得る。更にノンドープＧａＡｓ成膜室とｎ−
ＧａＡｓ成膜室とは隔壁３と４で分離されており。In this way, the interface between the PET buffer layer and the FET operating layer can be formed steeply. Furthermore, a non-doped GaAs film formation chamber and an n-
It is separated from the GaAs film forming chamber by partition walls 3 and 4.
−万のノンドープＧａＡｓ成膜室が他室側ドーノクント
ガスＨａｓにより汚染されることがなく、再現１生の良
い低キヤリア密度のノンドープ層を得ること力く出来る
。- The non-doped GaAs film forming chamber of 10,000 times is not contaminated by the donokund gas Has on the other chamber side, and it is possible to obtain a low carrier density non-doped layer with good reproducibility.
第４図は、前記本発明の縦型反応管を、横型反応管に適
用した一実施例を示す斜視図である。FIG. 4 is a perspective view showing an embodiment in which the vertical reaction tube of the present invention is applied to a horizontal reaction tube.
同図中、第１図装置と同一機能構成部しま同一参照番号
が付与しである。但し９反応管は図示されてない。In the figure, the same functional components as those in the apparatus of FIG. 1 are designated by the same reference numerals. However, nine reaction tubes are not shown.
第４図横型ライチ管は図示の如く２石英の分離壁３と連
接するカーボン製固定サセプタ４による仕切壁が形成さ
れ、異成分の反応ガス室が形成される。前記サセプタ４
には１前後の反応室に跨る貫通窓５．及び各室に跨る可
動サセプタ７の支承部９が設けられる（第３図参照）。As shown in FIG. 4, in the horizontal litchi tube, a partition wall is formed by a fixed susceptor 4 made of carbon and connected to a partition wall 3 made of quartz, and a reaction gas chamber containing different components is formed. The susceptor 4
There is a through window spanning the reaction chambers 1 and 5. A support portion 9 for a movable susceptor 7 that spans each chamber is also provided (see FIG. 3).
そして支承部９の面上で回転可能な基板６収納になる可
動サセプタ７が前記同様に配置される。A movable susceptor 7 that accommodates the rotatable substrate 6 on the surface of the support portion 9 is arranged in the same manner as described above.
前記縦型反応管構成との主たる相違は、可１Ｊサセプタ
７の駆動部、即ち２石英軸８はカーボン製連結ギヤー１
８を介して水平駆動軸１９により駆動されることにある
。The main difference from the above-mentioned vertical reaction tube configuration is that the drive unit of the 1J susceptor 7, that is, the quartz shaft 8 is connected to the carbon connecting gear 1.
8 by a horizontal drive shaft 19.
前記実施例図は加工対象基板に対する反応室間の移動は
何れも回転式であるが、前記移動は水平面内のスライド
方式で行うことも出来る。Although the movement of the substrate to be processed between the reaction chambers in the above-mentioned embodiment diagrams is performed in a rotational manner, the movement may also be performed in a sliding manner in a horizontal plane.
第５図は基板スライド機構によるライナ管の要部断面図
、又第６図は第５図スライド機構部の斜視図である。FIG. 5 is a cross-sectional view of the main part of the liner tube by the substrate slide mechanism, and FIG. 6 is a perspective view of the slide mechanism part shown in FIG.
第５図と第６図に於いて１反応室部の仕切板或いは固定
側サセプタ４．及び異なる反応室部分に延びる固定サセ
プタの支承部９は一体に成形されること、又前記支承部
９の面上を摺動する可動サセプタ２０が配置されること
など基本的構成器よ＋ ’ｆｉｎ図例えば第１図と同じ
である。In FIGS. 5 and 6, the partition plate or fixed side susceptor 4 of one reaction chamber. The basic components include that the support part 9 of the fixed susceptor extending to different reaction chamber parts is integrally molded, and that a movable susceptor 20 that slides on the surface of the support part 9 is disposed. The figure is the same as, for example, FIG.
図中、２０は固定サセプタの貫通窓５内を左右方向ど摺
動する可動サセプタ、これには基板６の収納四部が設け
られる。２１は支承部上面のスライドガイドをなすレー
ル、２２は前記サセプタ２０の底面側の一側面に形成す
るう・ツクギヤー、及び２３６まラックギヤー２２と噛
み合うビニオンギヤーである。In the figure, reference numeral 20 denotes a movable susceptor that slides in the left-right direction within the through-hole 5 of the fixed susceptor, and is provided with four storage parts for the substrate 6. Reference numeral 21 designates a rail forming a slide guide on the upper surface of the support, 22 a gear gear formed on one side of the bottom surface of the susceptor 20, and 236 a pinion gear that meshes with the rack gear 22.
ビニオンギヤー２３はライナ管中心の石英軸８を経て基
板移動制御部（第１図を参照されたＧ１）で駆動される
。而して該軸８の正負回転方向を変えることにより基板
を異なる反応室間に瞬時自９Ｇこスライド移動させ得る
。The binion gear 23 is driven by a substrate movement control section (G1 in FIG. 1) via a quartz shaft 8 located at the center of the liner tube. By changing the positive and negative rotation directions of the shaft 8, the substrate can be instantly slid by 9G between different reaction chambers.
前記スライド機構による場合は３回転式よりもライナ管
の管径を小さくすることが出来る為、装置稼働の例えば
高周波コイル１２のサセプタ加熱効率がよくなる利点が
ある。これに伴い、生産加工性をより高めることが出来
る。In the case of using the slide mechanism, the diameter of the liner tube can be made smaller than in the three-rotation type, so there is an advantage that the efficiency of heating the susceptor of the high frequency coil 12 during device operation, for example, is improved. Accordingly, production processability can be further improved.
この様な多室構成反応管隔壁の基板ザセプタ部を、気密
性が形成しやすい固定カーボン壁とし。The substrate zaceptor portion of such a multi-chamber reaction tube partition wall is made of a fixed carbon wall that can easily form airtightness.
然も一方の室から他方の室へ加工成膜基板を瞬間的に移
動可能な可動サセプタを具える反応管とすれば、高周波
加熱時のサセプタ基板温度を一定に保持して反応室間の
基板移動操作環、従来５問題とされた事項が解決される
。However, if the reaction tube is equipped with a movable susceptor that can instantaneously move the processed film-formed substrate from one chamber to the other, the temperature of the susceptor substrate during high-frequency heating can be kept constant and the substrate between the reaction chambers can be moved. The five problems of the mobile operation ring in the past are solved.
斯（して１例えば急峻な界面を有する多層のエピタキシ
膜成膜を容易に形成することが出来、特性がより良好な
ＦＥＴ等の半導体素子の形成が提供できる。In this way, for example, a multilayer epitaxial film having a steep interface can be easily formed, and semiconductor elements such as FETs with better characteristics can be formed.
（ｇ）発明の効果
以上、実施例により詳細に説明した本発明の多室反応管
を具備する半導体気相成長装置とすれは。(g) Effects of the Invention The semiconductor vapor phase growth apparatus equipped with the multi-chamber reaction tube of the present invention has been described in detail with reference to Examples.
急峻なドーピングプロファイルを有する多層の化合物半
導体膜などを効率良く成膜することが出来る。又＋ＭＢ
Ｅ （Ｍｏｌｅｃｕｌａｒ Ｂｅａｍ Ｅｐｉｔａｘｙ
）などの高価な成膜装置を用いる必要がないため半導体
装置形成のコストを軽減することも出来る。A multilayer compound semiconductor film or the like having a steep doping profile can be efficiently formed. Also + MB
E (Molecular Beam Epitaxy
) It is not necessary to use expensive film forming equipment, so the cost of forming a semiconductor device can also be reduced.
第１図は１本発明の縦型構成多室反応管実施例を示す簡
略斜視図、第２図は第１図カーボンサセプタの仕切壁要
部構成を示す側面図、第３図は第２図の上面図、及び第
４図は横型反応管実施例を示す簡略斜視図である。又、
第５図と第６図は縦型のスライド機構を有する多室反応
管の要部側断面図と斜視図である。
図中、１は反応管、２は二車分割のライナ管。
４ばカーボンサセプタ（固定部）、５は４の百通窓、６
は加工対象とする半導体基板、７はカーボンサセプタ（
可動部）、８と１９は何れも回転軸。
９は７の支承部、１０と１１は共にガス管、１２は高周
波コイル、１３はマニホールド、１５は基板６の移動制
御部、１７は基板収納の凹部、１８はギヤー、２０はス
ライド式カーボンサセプタ、２１は２０の支承部。
２２はラックギヤー、及び２３はピニオンギヤ−である
。
亨１屈
不２川 第３目
第４閃
茅６間Fig. 1 is a simplified perspective view showing an embodiment of a vertically configured multi-chamber reaction tube of the present invention, Fig. 2 is a side view showing the main structure of the partition wall of the carbon susceptor shown in Fig. 1, and Fig. 3 is Fig. 2 The top view and FIG. 4 are simplified perspective views showing an embodiment of the horizontal reaction tube. or,
FIGS. 5 and 6 are a side sectional view and a perspective view of essential parts of a multichamber reaction tube having a vertical slide mechanism. In the figure, 1 is a reaction tube, and 2 is a two-car liner tube. 4 is the carbon susceptor (fixed part), 5 is the hundred window of 4, 6
7 is the semiconductor substrate to be processed, and 7 is the carbon susceptor (
(movable part), 8 and 19 are both rotating shafts. 9 is a support part for 7, 10 and 11 are both gas pipes, 12 is a high frequency coil, 13 is a manifold, 15 is a movement control part for the board 6, 17 is a recess for storing the board, 18 is a gear, and 20 is a sliding carbon susceptor. , 21 is the bearing part of 20. 22 is a rack gear, and 23 is a pinion gear. Toru 1 unyielding 2 rivers 3rd eye 4th flash 6 days
Claims (1)
熱体よりなるサセプタを設け２分割された反応室部分に
各々種類の異なる反応ガスを供給すると共に１反応処理
中一方の反応室部分から他方の反応室部分へ基板を移動
させて異なる種類の成長膜を生成させることを特徴とす
る気相成長方法。[Claims] It is integrated with a partition plate that divides the reaction chamber into a plurality of parts. A fixed heating element extending into the divided reaction chamber is installed. A susceptor made of a movable heating element is provided on the fixed heating element in the divided reaction chamber part, and a different type of reaction gas is supplied to each of the divided reaction chamber parts, and one reaction chamber part is used during one reaction process. A vapor phase growth method characterized by moving a substrate from one reaction chamber to another to produce different types of growth films.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23180583A JPS60123022A (en) | 1983-12-08 | 1983-12-08 | Vapor growth method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23180583A JPS60123022A (en) | 1983-12-08 | 1983-12-08 | Vapor growth method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60123022A true JPS60123022A (en) | 1985-07-01 |
| JPH0586643B2 JPH0586643B2 (en) | 1993-12-13 |
Family
ID=16929292
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23180583A Granted JPS60123022A (en) | 1983-12-08 | 1983-12-08 | Vapor growth method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60123022A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100092666A1 (en) * | 2006-12-25 | 2010-04-15 | Tokyo Electron Limited | Film deposition apparatus and film deposition method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5350973A (en) * | 1976-10-20 | 1978-05-09 | Matsushita Electric Ind Co Ltd | Vapor phase growth method and vapor phase growth apparatus |
| JPS53110366A (en) * | 1977-03-04 | 1978-09-27 | Gnii Pi Redkometa | Device for epitaxially growing semiconductor period structure from gaseous phase |
-
1983
- 1983-12-08 JP JP23180583A patent/JPS60123022A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5350973A (en) * | 1976-10-20 | 1978-05-09 | Matsushita Electric Ind Co Ltd | Vapor phase growth method and vapor phase growth apparatus |
| JPS53110366A (en) * | 1977-03-04 | 1978-09-27 | Gnii Pi Redkometa | Device for epitaxially growing semiconductor period structure from gaseous phase |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100092666A1 (en) * | 2006-12-25 | 2010-04-15 | Tokyo Electron Limited | Film deposition apparatus and film deposition method |
| TWI424475B (en) * | 2006-12-25 | 2014-01-21 | Tokyo Electron Ltd | Film forming apparatus and film forming method |
| US8696814B2 (en) * | 2006-12-25 | 2014-04-15 | Tokyo Electron Limited | Film deposition apparatus and film deposition method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0586643B2 (en) | 1993-12-13 |
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