JPS53110366A - Device for epitaxially growing semiconductor period structure from gaseous phase - Google Patents

Device for epitaxially growing semiconductor period structure from gaseous phase

Info

Publication number
JPS53110366A
JPS53110366A JP2368577A JP2368577A JPS53110366A JP S53110366 A JPS53110366 A JP S53110366A JP 2368577 A JP2368577 A JP 2368577A JP 2368577 A JP2368577 A JP 2368577A JP S53110366 A JPS53110366 A JP S53110366A
Authority
JP
Japan
Prior art keywords
gaseous phase
epitaxially growing
growing semiconductor
period structure
semiconductor period
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2368577A
Other languages
Japanese (ja)
Other versions
JPS5633855B2 (en
Inventor
Borisouitsuchi Koruj Gurigorii
Piyootorouitsuchi Fu Warenchin
Washirieuitsuchi Yushiko Yurii
Nikoraeuitsuchi Masuro Wajiimu
Efugenieuitsuchi Korobof Oregu
Piyootorouitsuchi Urajimiiru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GNII PI REDKOMETA
Original Assignee
GNII PI REDKOMETA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by GNII PI REDKOMETA filed Critical GNII PI REDKOMETA
Priority to JP2368577A priority Critical patent/JPS53110366A/en
Publication of JPS53110366A publication Critical patent/JPS53110366A/en
Publication of JPS5633855B2 publication Critical patent/JPS5633855B2/ja
Granted legal-status Critical Current

Links

JP2368577A 1977-03-04 1977-03-04 Device for epitaxially growing semiconductor period structure from gaseous phase Granted JPS53110366A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2368577A JPS53110366A (en) 1977-03-04 1977-03-04 Device for epitaxially growing semiconductor period structure from gaseous phase

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2368577A JPS53110366A (en) 1977-03-04 1977-03-04 Device for epitaxially growing semiconductor period structure from gaseous phase

Publications (2)

Publication Number Publication Date
JPS53110366A true JPS53110366A (en) 1978-09-27
JPS5633855B2 JPS5633855B2 (en) 1981-08-06

Family

ID=12117295

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2368577A Granted JPS53110366A (en) 1977-03-04 1977-03-04 Device for epitaxially growing semiconductor period structure from gaseous phase

Country Status (1)

Country Link
JP (1) JPS53110366A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5699843U (en) * 1979-12-26 1981-08-06
JPS60123022A (en) * 1983-12-08 1985-07-01 Fujitsu Ltd Vapor growth method

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5699843U (en) * 1979-12-26 1981-08-06
JPS60123022A (en) * 1983-12-08 1985-07-01 Fujitsu Ltd Vapor growth method

Also Published As

Publication number Publication date
JPS5633855B2 (en) 1981-08-06

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