JPS5615838A - Gaseous phase growth device - Google Patents

Gaseous phase growth device

Info

Publication number
JPS5615838A
JPS5615838A JP9200979A JP9200979A JPS5615838A JP S5615838 A JPS5615838 A JP S5615838A JP 9200979 A JP9200979 A JP 9200979A JP 9200979 A JP9200979 A JP 9200979A JP S5615838 A JPS5615838 A JP S5615838A
Authority
JP
Japan
Prior art keywords
magnetic field
gaseous phase
phase growth
ions
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9200979A
Other languages
Japanese (ja)
Inventor
Yoshiyuki Uchida
Shinji Nishiura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP9200979A priority Critical patent/JPS5615838A/en
Publication of JPS5615838A publication Critical patent/JPS5615838A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To homogenize the quality of the film obtained by gaseous phase growth by applying a magnetic field in the direction of a right angle to DC electric field for glow discharge. CONSTITUTION:The discharge electroes 2 and 3 are arranged i mutually facing manner inside of a vacuum container 1, and a DC voltage is applied to the positive electrode 2 on the upside. The container 1 is evacuated from an exhaust port 4 so as to keep it under vacuum and SiH4 gas is let in a gas inlet 5, where SiH4 is decomposed by glow discharge and Si atom is inoized to become a plasma state, and furthermore a magnetic field is formed in the right angle direction to the electric field by magnetic pole coils 6 between the electrodes 2 and 3. Upon forming a magnetic field by the magnetic pole coils 6, ions of low kinetic energy are bent by the magnetic field and thus fail to reach the negative pole 3. Accordingly, only the ions of high kinetic energy can grow on a substrate place near the negative pole 3 to form a homogeneous film.
JP9200979A 1979-07-19 1979-07-19 Gaseous phase growth device Pending JPS5615838A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9200979A JPS5615838A (en) 1979-07-19 1979-07-19 Gaseous phase growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9200979A JPS5615838A (en) 1979-07-19 1979-07-19 Gaseous phase growth device

Publications (1)

Publication Number Publication Date
JPS5615838A true JPS5615838A (en) 1981-02-16

Family

ID=14042461

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9200979A Pending JPS5615838A (en) 1979-07-19 1979-07-19 Gaseous phase growth device

Country Status (1)

Country Link
JP (1) JPS5615838A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57161057A (en) * 1981-03-30 1982-10-04 Mitsubishi Electric Corp Chemical vapor phase growth device using plasma
WO1983001710A1 (en) * 1981-11-02 1983-05-11 Campbell, William, P., Iii An amorphous silicon material fabricated by a magnetically aligned glow discharge
JPS619577A (en) * 1984-06-25 1986-01-17 Nec Corp Plasma chemical vapor phase growing method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57161057A (en) * 1981-03-30 1982-10-04 Mitsubishi Electric Corp Chemical vapor phase growth device using plasma
JPS6124467B2 (en) * 1981-03-30 1986-06-11 Mitsubishi Electric Corp
WO1983001710A1 (en) * 1981-11-02 1983-05-11 Campbell, William, P., Iii An amorphous silicon material fabricated by a magnetically aligned glow discharge
JPS619577A (en) * 1984-06-25 1986-01-17 Nec Corp Plasma chemical vapor phase growing method

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