JPS54149338A - Thin film forming method by sputtering - Google Patents

Thin film forming method by sputtering

Info

Publication number
JPS54149338A
JPS54149338A JP5781278A JP5781278A JPS54149338A JP S54149338 A JPS54149338 A JP S54149338A JP 5781278 A JP5781278 A JP 5781278A JP 5781278 A JP5781278 A JP 5781278A JP S54149338 A JPS54149338 A JP S54149338A
Authority
JP
Japan
Prior art keywords
container
gas
thin film
torr
discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5781278A
Other languages
Japanese (ja)
Inventor
Tsutomu Tsukada
Naokichi Hosokawa
Shunyo Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP5781278A priority Critical patent/JPS54149338A/en
Publication of JPS54149338A publication Critical patent/JPS54149338A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

Abstract

PURPOSE:To econimically form a tough thin film contg. little gas by stopping introduction of an inert gas to hold a high vacuum while ionizing a sputtered cathode constituent substance to maintain discharge and by coating a substrate with the sputtered substance. CONSTITUTION:Vacuum container 11 is evacuated to below 1X10<-6> Torr, cylindrical shutter 15 is shut, and Ar gas is introduced from valve 18 to regulate the inside of container 11 to about 2X10<-3> Torr. By applying DC voltage 19 discharge is produced in container 1. Valve 18 is then closed, and Ar gas is thoroughly exhausted from container 1 through exhaust duct 17 to regulate the inside of container 11 to below 1X10<-6> Torr. At this time, discharge is maintained with sputtered cathode constituent substance ions. By pulling shutter chamber 15 into shutter chamber 110 at this state substrate 16 can be covered with a thin film of cylindrical target substance 13 contg. little gas and having high bonding strength.
JP5781278A 1978-05-15 1978-05-15 Thin film forming method by sputtering Pending JPS54149338A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5781278A JPS54149338A (en) 1978-05-15 1978-05-15 Thin film forming method by sputtering

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5781278A JPS54149338A (en) 1978-05-15 1978-05-15 Thin film forming method by sputtering

Publications (1)

Publication Number Publication Date
JPS54149338A true JPS54149338A (en) 1979-11-22

Family

ID=13066325

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5781278A Pending JPS54149338A (en) 1978-05-15 1978-05-15 Thin film forming method by sputtering

Country Status (1)

Country Link
JP (1) JPS54149338A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794413A (en) * 1993-09-22 1995-04-07 Anelva Corp Method of wiring integrated circuit, method of wiring integrated circuit for filling hole or groove, and multi-chamber substrate treating device
US6423192B1 (en) 1999-10-29 2002-07-23 Kabushiki Kaisha Toshiba Sputtering apparatus and film forming method
JP2011179068A (en) * 2010-03-01 2011-09-15 Ulvac Japan Ltd Metal thin film forming method
JP2016526605A (en) * 2013-07-03 2016-09-05 エリコン サーフェス ソリューションズ アーゲー、 プフェフィコン Target production

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0794413A (en) * 1993-09-22 1995-04-07 Anelva Corp Method of wiring integrated circuit, method of wiring integrated circuit for filling hole or groove, and multi-chamber substrate treating device
US6423192B1 (en) 1999-10-29 2002-07-23 Kabushiki Kaisha Toshiba Sputtering apparatus and film forming method
JP2011179068A (en) * 2010-03-01 2011-09-15 Ulvac Japan Ltd Metal thin film forming method
JP2016526605A (en) * 2013-07-03 2016-09-05 エリコン サーフェス ソリューションズ アーゲー、 プフェフィコン Target production

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