JPS5597468A - Ion plating equipment - Google Patents

Ion plating equipment

Info

Publication number
JPS5597468A
JPS5597468A JP425679A JP425679A JPS5597468A JP S5597468 A JPS5597468 A JP S5597468A JP 425679 A JP425679 A JP 425679A JP 425679 A JP425679 A JP 425679A JP S5597468 A JPS5597468 A JP S5597468A
Authority
JP
Japan
Prior art keywords
evaporation source
gas
evaporating material
ion plating
vacuum chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP425679A
Other languages
Japanese (ja)
Other versions
JPS6139394B2 (en
Inventor
Etsuo Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Citizen Watch Co Ltd
Original Assignee
Citizen Watch Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Citizen Watch Co Ltd filed Critical Citizen Watch Co Ltd
Priority to JP425679A priority Critical patent/JPS5597468A/en
Publication of JPS5597468A publication Critical patent/JPS5597468A/en
Publication of JPS6139394B2 publication Critical patent/JPS6139394B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating

Abstract

PURPOSE:To stabilize evapoartion rate through separation of evaporation source and gas discharge plasma by applying D.C. voltage across the vacuum chamber and a box that contains the evaporation source mounted in the vacuum chamber of an ion plating unit. CONSTITUTION:The vacuum chamber 1 is evacuated through exhaust system 15-10<-5> Torr or less, and introuduction gas such as O2 and N2 is fed through gas stopper 16 and valve 17 to a pressure of about 10<-4>-10<-2> Torr. The evaporation source 4 containing evaporating material 9 is housed in box 3, which is connected to positive of the D.C. supply 2. The electrode 7 that supports substrate 5 is connected to the negative. The evaporating material is heated by A.C. supply 12 and is evaporated. A high-frequency electrode 11 is placed between the substrate 5 and the evaporation source 4 so that high frequncy discharge is generated within the chamber 1. This allows the evaporation source 4 to be separated from high frequency discharge plasma, and prevents high frequency gas ions from penetrating through box opening 18. This reduces deterioration of the evaporation source 4, and prevents compound to deposit on molten evaporating material 8 or opening of the evaporation source. As a result, the evaporation rate is stabilized to provide reliable ion plating of evaporating material and introduction gas compound on the substrate.
JP425679A 1979-01-17 1979-01-17 Ion plating equipment Granted JPS5597468A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP425679A JPS5597468A (en) 1979-01-17 1979-01-17 Ion plating equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP425679A JPS5597468A (en) 1979-01-17 1979-01-17 Ion plating equipment

Publications (2)

Publication Number Publication Date
JPS5597468A true JPS5597468A (en) 1980-07-24
JPS6139394B2 JPS6139394B2 (en) 1986-09-03

Family

ID=11579451

Family Applications (1)

Application Number Title Priority Date Filing Date
JP425679A Granted JPS5597468A (en) 1979-01-17 1979-01-17 Ion plating equipment

Country Status (1)

Country Link
JP (1) JPS5597468A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55144391A (en) * 1979-04-25 1980-11-11 Toshiba Corp Pipe working method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55144391A (en) * 1979-04-25 1980-11-11 Toshiba Corp Pipe working method

Also Published As

Publication number Publication date
JPS6139394B2 (en) 1986-09-03

Similar Documents

Publication Publication Date Title
US3961103A (en) Film deposition
JPS6254078A (en) Apparatus for depositing membrane to substrate by cathodic sputtering treatment
GB1483966A (en) Vapourized-metal cluster ion source and ionized-cluster beam deposition
MY104370A (en) Method for pure ion plating using magnetic fields.
US5313067A (en) Ion processing apparatus including plasma ion source and mass spectrometer for ion deposition, ion implantation, or isotope separation
JPS5489983A (en) Device and method for vacuum deposition compound
JPS5597468A (en) Ion plating equipment
JPS55110771A (en) Vacuum vapor depositing apparatus
JPS5534689A (en) Sputtering device
JPS60251269A (en) Method and apparatus for ionic plating
JPS54149338A (en) Thin film forming method by sputtering
JPS5710629A (en) Plasma treatment of hollow body
JPS5689835A (en) Vapor phase growth apparatus
JPS5591971A (en) Thin film forming method
JPH03123022A (en) Plasma film forming device
JPS57123968A (en) Formation of zinc oxide film by plasma vapor phase method
JPH01168857A (en) Formation of titanium nitride film
JPS63238266A (en) Sputtering device
JPS57161059A (en) Film forming device
JPS55141562A (en) Metallizing method
JPS56105475A (en) Coating apparatus and method of substrate by cathode spattering and use
JPS5677379A (en) Metal film depositing apparatus
JPS568816A (en) Manufacture of amorphous silicon film
JPS577116A (en) Manufacture of amorphous silicon thin film
Kawashimo Arc Discharge Type of High Vacuum Ion Plating