JPS60251269A - Method and apparatus for ionic plating - Google Patents

Abstract

PURPOSE:To enable film formation under lower pressure and to obtain a coated film having superior quality and a film high in degree of crystallization by irradiating ionic beam on the surface to be vapor-deposited in case of the vapor deposition of ionic plating. CONSTITUTION:A vacuum vessel 1 provided with an evaporation source 13 and an article 17 to be vapor-deposited which is held on a holder 15 for a base plate is regulated to the low-pressure atmosphere of about <10<-3>Pa and plasma is formed with high frequency discharge caused by a high frequency oscillation coil 21 at the neighborhood of the evaporation source 13. The evaporated substance supplied from the evaporation source 13 is partially ionized with the plasma to cause vapor deposition on the surface 17a to be vapor-deposited and on one hand, the vapor deposition by the above-mentioned ionic plating is advanced while beating the surface 17c by means of gaseous ions supplied from an ionic gun 23. The electron density in the atmosphere is increased on the basis of irradiation of the ionic beam and thereby the discharge under low pressure is enabled and the formation of the coated film having superior quality and the film high in degree of crystallization is enabled by preventing the pollution of the film due to gaseous molecule or the like.

Description

DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an ion blating apparatus that ionizes and deposits an evaporated material using plasma.

According to the conventional technology ion blating, various characteristics different from normal vacuum evaporation can be obtained due to the presence of plasma, ionized evaporated substances, or gas ions, such as: (1) Adhesion strength to the substrate is significantly compared 2- (2) Compound films such as oxides, nitrides, and carbides can be easily obtained by reactive ion blating, (3) Highly crystallized films can be obtained, etc. Shows excellent properties.

However, the conventional ion blating method has the problem of requiring a relatively high pressure atmosphere to cause discharge. In this respect, while the DC method using direct current glow discharge required a high voltage on the order of 10 nPa, by adopting the RF method using a high frequency transmitting coil, the voltage was improved to 10-1 to 1 O-2 Pa. . However, further improvements have been made in order to eliminate gas contamination of the membrane and obtain better membrane quality.

Further, gas ions are generated within the plasma, and the evaporated substances are ionized by the gas ions, so the ionization rate and energy state of the evaporated substances and gas molecules are largely controlled by the discharge conditions. Therefore, it has been difficult to set film properties such as crystallinity and reaction conditions between gas molecules and vaporized molecules to optimal conditions depending on each film to be formed.

Problems to be Solved by the Invention An object of the present invention is to provide an ion blating method and apparatus capable of forming a film under a low pressure of 10-3 Pa or lower.

Another object of the present invention is to provide an ion blating method and apparatus in which the energy state of gas ions can be controlled independently of the discharge conditions according to the individual characteristics required of the film to be formed. .

Means for Solving the Problems The ion blating method of the present invention forms plasma by electric discharge in a vacuum chamber, ionizes the evaporated material from the evaporation source, and deposits it on the surface to be evaporated. It is characterized by irradiating the area with an ion beam.

The ion blating apparatus of the present invention also includes: (a) a vacuum chamber; (b) an evaporation source disposed within the vacuum chamber; (d) an evaporated substance ionization member that forms plasma by discharge between the evaporation source and the substrate holder; The method is characterized in that an ion source is provided for irradiating an ion beam onto the vapor deposition surface.

By adjusting the accelerating voltage of the Hokuho ion beam, the energy state of the ions can be set independently of the plasma. Furthermore, ion beam irradiation increases the ion density in the vacuum chamber.

Example FIG. 1 is a block diagram showing an embodiment of the present invention.

In the vacuum chamber 11, an evaporation source 13 and a substrate holder 15 are placed.
A substrate 17 to be vapor-deposited is supported on the substrate holder 15. This substrate 17 can be supplied into the vacuum chamber in a batch manner or can be supplied continuously.

A high frequency transmitting coil (RF coil) is located near the evaporation source 13.
21 is provided, plasma is formed by high frequency discharge, and the evaporated material from the evaporation source 13 is further ionized and deposited on the deposition surface 17a. Furthermore, an ion gun 23 is disposed as an ion source, and the deposition surface 17a is struck by gas ions from the ion gun 23, while the vapor deposition by the ion blating proceeds. As the ion gun, a Kaufman type ion gun or the like is used. In the figure, 31 is an evaporation source power supply, 33 is a high frequency power supply, 35 is a gas supply unit, 37 is an ion gun power supply, 39
represents the exhaust system.

To perform ion blating according to the present invention, for example, first, the vacuum chamber 11 is evacuated by the exhaust system 39 and the
After creating a low pressure atmosphere of -3 Pa or less, the ion gun 23
Then, the ion beam is irradiated onto the deposition surface 17a to perform cleaning. Next, while continuing the ion beam irradiation, the evaporation material is evaporated from the evaporation source 13 and discharge is caused by the RF coil 21 to ionize a portion of the evaporation material to perform ion blating. Secondary electrons are emitted by the ion beam irradiation, increasing the electron density in the atmosphere, making it possible to discharge under low pressure. In the case of normal ion blating, inert gas ions such as argon are supplied from an ion gun. In the case of reactive ion blating, active gas ions such as oxygen, nitrogen, and methane are irradiated from an ion gun. Alternatively, ions of an inert gas such as argon gas may be irradiated from the ion gun 23 while introducing an active gas such as oxygen into the vacuum chamber 11 from the gas introduction valve 27 .

Further, a bias voltage may be applied to the substrate holder 15.

Effects of the Invention According to the present invention, since the electron density in the vacuum chamber is increased by ion beam irradiation, ion blating can be performed under a lower pressure than before.

7- As a result, it is possible to prevent the film from being contaminated by gas molecules and form a high-quality film.

In addition, in the conventional ion blating method, gas ions were supplied only from within the plasma, so the vapor density and ionization rate of the evaporated substance and the density and energy state of gas ions such as argon could be controlled separately. There wasn't. In contrast, according to the present invention, gas ions are supplied from an ion beam in addition to plasma. Moreover, by controlling the accelerating voltage of the ion source and the amount of gas supplied, the energy state and amount of gas ions striking the surface to be deposited can be adjusted as appropriate. As a result, it is possible to partially ionize and deposit the evaporated material while bombarding the deposition surface with high-energy gas ions, making it possible to form a film with a high degree of crystallinity and to perform stable reactive ion blating. It is.

Furthermore, the state of the gas ions can be adjusted independently of the discharge conditions depending on the required characteristics of the deposited film and the properties of the bulk.

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[Brief explanation of the drawing]

FIG. 1 is a diagram for explaining the present invention in detail. 11... Vacuum tank 13... Evaporation source 15...
・Substrate holder 17a...Deposition surface 21...RF
Coil 23...Ion mirror 9- Fan flash

Claims (1)

[Claims] (1) When plasma is formed by electric discharge in a vacuum chamber, and the evaporated material from the evaporation source is ionized and deposited on the surface to be evaporated, the surface to be evaporated is irradiated with an ion beam. Ion blating method. 2. The method according to claim 1, wherein the discharge is caused by high frequency excitation. 3. (a) a vacuum chamber; (b) an evaporation source disposed within the vacuum chamber; (C) a substrate holder disposed within the vacuum chamber and supporting an object to be deposited; (d) a substrate holder disposed within the vacuum chamber; In an ion blating apparatus having an evaporation substance ionization member that forms plasma by electric discharge between an evaporation source and the substrate holder, the method further comprises: 1-(e) irradiating the evaporation surface of the object to be evaporated with an ion beam; An ion brating device characterized by being provided with an ion source. 4. The apparatus according to claim 3, wherein the evaporated substance ionizing member (d) includes a high-frequency oscillation coil disposed between the evaporation source and the substrate holder.