WO2003012160A1

WO2003012160A1 - High frequency ion plating vapor deposition system

Info

Publication number: WO2003012160A1
Application number: PCT/JP2001/006601
Authority: WO
Inventors: Fumio Matsumura
Original assignee: Asahi Optronics, Ltd.; Sun Instruments, Inc.
Priority date: 2001-07-31
Filing date: 2001-07-31
Publication date: 2003-02-13

Abstract

A high frequency ion plating vapor deposition system for applying vapor deposition to a vapor deposition substrate (15) in a vacuum belljar (13), comprising a vapor deposition substrate dome (17) for supporting the vapor deposition substrate (15), one or more vapor deposition source (19) disposed oppositely to the vapor deposition substrate dome (17), a first high frequency ring (23) disposed approximately directly above each vapor deposition source (19) and having opposite end parts connected with a first high frequency power supply (21), and a second high frequency ring (27) disposed proximately to the vapor deposition substrate dome (17) and having opposite end parts connected with a second high frequency power supply (25). According to the arrangement, a desired vapor deposition film can be formed well and uniformly on the vapor deposition substrate.

Description

Description High frequency ion plating deposition equipment Technical field

The present invention relates to a high-frequency ion plating vapor deposition apparatus using a high-frequency ring, and more particularly to a vapor deposition apparatus and a vapor deposition method capable of efficiently producing a high-performance optical dielectric vapor deposition film. Background art

As a conventional ion-plating deposition apparatus using a high-frequency ring, for example, one having a configuration as shown in FIG. 7 has been proposed. FIG. 7 is a diagram showing a basic configuration of a conventional high-frequency ion plating vapor deposition apparatus. The high-frequency ion plating deposition apparatus 51 shown in FIG. 7 is provided with a vacuum bell jar 53 that can maintain the inside of the apparatus in a substantially vacuum state. A vapor deposition substrate dome 57 is disposed in the upper part of the vacuum bell jar 53, and the vapor deposition substrate 55 to be vapor deposited is fixed thereon. A deposition source 59 is arranged in the lower part of the vacuum peruger 53. A high-frequency ring 63 is disposed between the evaporation source 59 and the evaporation substrate dome 57. The diameter of the high-frequency ring 63 is only slightly smaller than the inner diameter of the vacuum peruger 53. The high frequency power from the high frequency power supply 61 is applied to one end of the high frequency ring 63.

The conventional high-frequency ion-plating vapor deposition apparatus 51 is configured as described above, whereby plasma is generated in the vacuum peruger 53 to ionize the vapor-deposited substance, thereby being ionized. Deposited material 6 5 is attached to the vapor deposition substrate 55 fixed on the vapor deposition substrate dome 57 by the negative self-bias electric field generated in the vapor deposition substrate dome 57.

However, in such a conventional high-frequency ion plating / evaporation apparatus, the density of the plasma generated in the high-frequency ring 63 varies extremely depending on the location, so that the center of the dome 57 of the evaporation substrate dome. However, there was a problem that a deposited film having uniform physical properties could only be formed.

Also, for example, when compared with a vacuum deposition method using other ions, such as an argon plasma gun method, the conventional technique has a problem that the ionization rate of the deposited material is as low as 5% or less. Further, the adhesive force of the vapor deposition material at the time of film formation is determined by the negative self-bias electric field of the vapor deposition substrate dome 57, but there is a problem that it is small.

Furthermore, when the degree of vacuum in the vacuum peruger fluctuates, there is a high possibility that generation of plasma due to electric discharge is stopped. At the same time, the material of the high-frequency ring is ionized by the discharge or the sputtering effect of plasma, and there is a problem that it adheres to the deposition substrate 55.

An object of the present invention is to improve the uniformity and efficiency of ionization of a deposition substance in a vacuum peruger in order to solve the above-mentioned problems of the conventional example.

Another object of the present invention is to provide a high-frequency ion plating deposition apparatus capable of forming a uniform and good deposited film on a deposition substrate.

Disclosure of the invention According to a first aspect of the present invention, there is provided a high-frequency ion plating deposition apparatus for performing deposition on a deposition substrate (15) in a vacuum peruger (13), wherein the deposition substrate (15) is supported. The deposition substrate dome (17) to be formed, one or more deposition sources (19) arranged opposite to the deposition substrate dome (17), and a position substantially immediately above each of the deposition sources (19), respectively. A first high-frequency ring (23) having both ends connected to a first high-frequency power supply (21); and a vapor deposition substrate dome (17) provided in close proximity to the first high-frequency ring (23). A high-frequency ion plating / evaporation apparatus comprising: a second high-frequency ring (27) having both ends connected to a second high-frequency power supply (25).

With this configuration, the impedance matching state between the high-frequency power supply and the high-frequency ring can be kept constant regardless of the degree of vacuum of the vacuum peruger, and the intensity of the induced magnetic field generated by the high-frequency ring can be maintained. Therefore, a uniform and favorable desired vapor-deposited film can be formed on the vapor-deposited substrate.

A dielectric material such as silicon dioxide or aluminum oxide may be melt-adhered to the first high frequency ring (23) and the second high frequency ring (27).

By configuring the high frequency ion plating deposition apparatus of the inductive coupling type in this way, it is possible to suppress the material of the high frequency ring from being ionized by electric discharge. In addition, since the material of the high-frequency ring can be prevented from adhering to the deposition substrate, a good deposited film can be formed.

Further, the high-frequency ion plating deposition apparatus may include a plurality of deposition sources, and may further include a thickness gauge for measuring the thickness of the deposited film corresponding to each deposition source. With this configuration, it is possible to perform multi-source simultaneous vapor deposition in which films are simultaneously formed from a plurality of vapor deposition sources.

The film thickness gauge may be a quartz film thickness meter provided on the upper part of the vacuum peruger (13), or the upper part or the lower part or both of the vacuum perger (13) It may be an optical film thickness meter provided in.

Further, the high-frequency ion plating deposition apparatus may include an ion beam gun and a neutralizer on a lower portion or a side surface of the vacuum bell jar.

If an ion beam gun is provided in this manner, it can be used as an ion source for cleaning a deposition substrate before deposition and for making the refractive index of a deposition film uniform. If a neutralizer is provided, ions can be neutralized when cleaning the substrate with an ion beam gun.

Further, an argon plasma gun may be provided on a side surface of the vacuum peruger.

With this configuration, it can be used as an ion source for cleaning a vapor deposition substrate before vapor deposition and for making the refractive index of a vapor deposited film uniform. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a diagram showing a basic configuration of a high-frequency ion plating vapor deposition apparatus according to a first embodiment.

FIG. 2 is a diagram showing a configuration of a high-frequency ion plating / evaporating apparatus according to a second embodiment. In particular, the configuration shown in FIG. 1 is further provided with an ion beam gun, a neutralizer, and an argon pump. This indicates that Razmagan has been placed.

FIG. 3 is a diagram showing an example of mounting a quartz film thickness gauge on a vacuum peruger.

FIG. 4 is a diagram showing an example of mounting an optical film thickness meter.

FIG. 5 is a diagram showing an example of mounting an optical film thickness meter.

FIG. 6 is a diagram showing a mounting example of an optical film thickness meter.

FIG. 7 is a diagram showing a basic configuration of a conventional high frequency ion plating vapor deposition apparatus. BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, the present invention will be described in detail based on embodiments shown in the accompanying drawings.

(First Embodiment)

FIG. 1 is a diagram showing a basic configuration of a high-frequency ion plating / evaporating apparatus 11 according to a first embodiment.

As shown in Fig. 1, high-frequency ion plating deposition equipment 1

Numeral 1 has a vacuum peruger 13 as a vacuum vessel capable of maintaining the inside in a substantially vacuum state, and a vapor deposition substrate dome 17 is arranged in the upper part of the vacuum peruger 13. The vapor deposition substrate dome 17 is an example of a supporting means for supporting the vapor deposition substrate 15 to be vapor deposited.

Further, a vapor deposition source 19 is arranged in the lower part of the vacuum peruger 13. The deposition source 19 is an example of a discharging unit for discharging a deposition material. A small first high-frequency ring 23 is provided between the evaporation source 19 and the evaporation substrate dome 17 and immediately above the evaporation source 19. Both ends of the first high-frequency ring 23 are connected to a high-frequency power supply 21 to receive high-frequency power. For example, here, high-frequency electric power having an electric energy of 1.5 KW and an industrial frequency of 1.356 MHz is used, but this is merely an example for easy understanding of the explanation. Therefore, the high frequency power is not limited to this, and various power amounts and frequencies can be used according to the purpose.

Here, an electron gun, resistance heating, or the like can be used as the evaporation source 19. Also, as its vapor deposition material, a dielectric material not only possess, such as a metallic material or a semiconductor material, ion deposition may possibly be any material, for _{_{example, S i O 2, P 2}} 0 5 _{_{, B 2 0 3, T a}} 2 〇 _{_{_{5, N b 2 0 5,}}} T i 0 2, G e O 2 , such as Ru can be utilized.

Although FIG. 1 shows only one evaporation source 19, a plurality of evaporation sources may be arranged. In that case, it will be possible to perform multi-source simultaneous vapor deposition in which films are simultaneously formed from a plurality of vapor deposition sources. For example, when four evaporation sources 19 are arranged, quaternary simultaneous evaporation can be performed.

Further, although not shown, a configuration may be adopted in which a quartz film thickness meter is individually provided for each evaporation source.

By the way, in the present embodiment, between the vapor deposition source 19 and the vapor deposition substrate dome 17, and at a position close to the vapor deposition substrate dome 17, a second second electrode having a diameter larger than the vapor deposition substrate dome 17 is provided. High-frequency rings 27 are provided. Both ends of the second high-frequency ring 27 are connected to a high-frequency power supply 25 so that high-frequency power is applied.

Although not shown in FIG. 1, the upper part of the vacuum A crystal thickness gauge (see FIG. 3 described later) may be provided. Further, an optical film thickness meter (see FIG. 4 described later) may be provided at the upper part or the lower part or both of the vacuum perugers 13.

In the first embodiment, the first high-frequency ring 23 and the second high-frequency ring 27 each have a surface in which a dielectric material such as silicon dioxide or aluminum oxide is melt-adhered in advance. A ring is used.

The high-frequency ion-plating deposition apparatus 11 according to the first embodiment configured as described above induces the deposition material 29 evaporated from the deposition source 19 by the magnetic field of the first high-frequency ring 23. It is ionized by the generated plasma. In that sense, the first high-frequency ring 23 will constitute an ionizing means.

At the same time, the plasma induced by the magnetic field of the second high-frequency ring 27 generates a negative self-bias electric field in the vicinity of the dome 17 of the evaporation substrate, and the ionized evaporation material (evaporation material) described above. 29 is attached to the deposition substrate 15 fixed to the deposition substrate dome 17 to vaporize a desired deposition film. In that sense, the second high-frequency ring 27 will use the electric field generating means.

As described above, according to the first embodiment, the high-frequency power supply 21 is directly connected to the first high-frequency ring 23, and the high-frequency power supply 25 is directly connected to the second high-frequency ring 27. Therefore, it is possible to maintain a constant state of impedance matching between the high-frequency power supply and the high-frequency ring irrespective of the vacuum of the vacuum peruger 13, which is generated by the high-frequency rings 23 and 27. Induced magnetic field strength can be stably maintained.

Further, according to the first embodiment, the vicinity of the evaporation substrate dome 17 The intensity of the negative self-biased electric field generated in the second high-frequency ring 27 can be arbitrarily adjusted by the magnitude of the current flowing through the second high-frequency ring 27, and the first high-frequency ring 23 can be used to adjust the evaporation material 2. Since the region where 9 is ionized is small, the degree of uniformity of ionization energy is high, and an arbitrary ionization efficiency can be obtained depending on the magnitude of the current flowing through the first high-frequency ring 23. The adjustment of the current may be performed manually, but control means such as a computer may be used.

Further, according to the first embodiment, since silicon dioxide is melt-adhered to the first high-frequency ring 23 and the second high-frequency ring 27 in advance, the material of the high-frequency ring is discharged or discharged. Even when there is a risk of ionization due to the sputtering effect of the plasma and sticking to the deposition substrate, the metal material of the high-frequency ring can be prevented from being absorbed into the deposition film.

Further, according to the first embodiment, the second high-frequency ring 27 for generating the self-biased electric field is basically not subject to the limitation of the size in manufacturing. The size of the high-frequency ion plating deposition apparatus can be increased within the range of the power that can be supplied to 25, so that a large amount of deposition substrates can be generated at one time, and efficient deposition processing can be performed. It can be performed.

Note that, in the first embodiment, an example in which two high-frequency rings are provided has been described. However, this is for the sake of simplicity. Of course, three or more rings may be provided.

In addition, a high-frequency ring is used as the ionization means, but other configurations may be employed as long as the deposition material can be ionized.

In addition, a high-frequency ring is used as the electric field generating means. Of course, another configuration may be adopted as long as a negative self-bias electric field can be generated in the vicinity of the dome 17 of the vapor deposition substrate.

(Second embodiment)

FIG. 2 is a view showing a configuration of a high-frequency ion plating / evaporating apparatus 31 according to the second embodiment. In the second embodiment, an ion beam gun 33, -a neutralizer 35 and an argon plasma gun 37 are added to the configuration shown in FIG. In FIG. 2, the same or corresponding components as those in FIG. 1 are denoted by the same reference numerals and description thereof is omitted.

The high-frequency ion plating / evaporating apparatus 31 according to the second embodiment is characterized in that the ion beam gun 33 and the argon plasma gun 37 are disposed, so that cleaning and evaporation before the evaporation of the evaporation substrate 15 are performed. The point is that it can be used as an auxiliary ion source to make the refractive index of the film uniform. The neutralizer 35 · neutralizes the ions when cleaning the substrate with the ion beam gun 33.

As described above, according to the second embodiment, the individual first high-frequency rings 23 directly connected to the high-frequency power supply 21 directly above the evaporation source 19 (here, the evaporation source and the Although one high-frequency ring is used, a plurality of high-frequency rings may be arranged.) And a second high-frequency ring 27 that is arranged close to the dome 17 of the vapor deposition substrate and directly connected to the high-frequency power supply 25. It has an ion beam gun 33, an argon plasma gun 37 and a neutralizer 35. With this configuration, it is possible to clean the vapor deposition substrate 15 before vapor deposition and to make the refractive index of the vapor deposition film uniform, and to neutralize ions when cleaning the substrate. An extremely efficient, low-cost, uniform dielectric vapor-deposited film can be formed on a large-area vapor-deposited substrate fixed to the vapor-deposited substrate dome in a vacuum peruger.

Further, as in the first embodiment, the ion vapor deposition method using only the high-frequency ring is, for example, a vapor deposition method using only an argon plasma gun, or an ion beam method such as an ion beam assisted vapor deposition method. Compared with the vapor deposition method using only a gun, there is an advantage that the cost is low as well as the introduction cost and the running cost of the apparatus. (Third embodiment)

In FIG. 3, a central part of a vapor deposition substrate dome 17 and a vapor deposition substrate 15 mounted in a vacuum peruger 13 is cut out, and a crystal thickness meter 39 is arranged there. Although not shown, in addition to this configuration, the crystal film thickness gauge may be protruded from the side surface of the vacuum bell jar 13 without cutting out the dome 17 of the deposition substrate.

(Fourth embodiment)

FIG. 4 to FIG. 6 are diagrams showing examples of mounting an optical film thickness meter. In the mounting example shown in FIG. 4, light is made incident through a window glass 43 arranged above the vacuum peruger 13 and is reflected by the film thickness monitor substrate 41. 3 It is arranged so that it can be taken out through the upper window glass 4 3.

In the mounting example shown in FIG. 5, light is incident from the window glass 43 placed above the vacuum peruger 13 as in the case of FIG. It is configured to be taken out through a window glass 45 arranged below the vacuum peruger l3.

In the mounting example shown in FIG. 6, a window glass 45 serving as a light extraction unit is arranged below the vacuum peruger 13. In addition, window glasses 43 and 45 are arranged as light incident portions, and incident light from a light source is made to enter from the window glasses 43 and 45, respectively. This configuration is arranged so that both transmitted light and reflected light can be measured. In this case, the input and output of light are performed by directly collimating the light emitted from a light source (not shown) by a lens, or by inputting the emitted light to an optical fiber and an optical fiber collimator. A typical input / output method is, but not limited to, a method for inputting / outputting data. Industrial applicability

As described above, according to the first aspect of the present invention, there is provided a high-frequency ion plating vapor deposition apparatus for performing vapor deposition on a vapor deposition substrate (15) in a vacuum bell jar (13). A vapor deposition substrate dome (17) supporting the vapor deposition substrate (15), one or more vapor deposition sources (19) opposed to the vapor deposition substrate dome (17), and a plurality of vapor deposition sources (19). The first high-frequency ring (23), which is arranged almost directly above, and both ends of which are connected to the first high-frequency power supply (21), and the vapor deposition substrate dome (17) And a second high-frequency ring (27) whose both ends are connected to a second high-frequency power supply (25). As a result, the impedance matching between the high-frequency power supply and the high-frequency ring is To maintain a constant state regardless of the degree of vacuum In addition, since the intensity of the induced magnetic field generated by the high-frequency ring can be stabilized, a uniform and favorable desired vapor-deposited film can be formed on the vapor-deposited substrate.

If a dielectric material such as silicon dioxide or aluminum oxide is melt-adhered to the first high frequency ring (23) and the second high frequency ring (27), the high frequency ring is obtained. This prevents the material from being ionized by the plasma and prevents the material of the high-frequency ring from adhering to the deposition substrate, so that a good deposited film can be formed. In addition, if a high-frequency ion plating deposition apparatus is provided with a plurality of deposition sources, and further provided with a thickness gauge for measuring the thickness of a deposited film corresponding to each deposition source, it is possible to use a plurality of deposition sources. Multi-source simultaneous vapor deposition for simultaneous film formation can be performed.

Furthermore, if an ion beam gun is provided at the bottom or side of the vacuum peruger, it can be used as an ion source for cleaning the vapor deposition substrate before vapor deposition and for making the refractive index of the vapor deposited film uniform.

Furthermore, if a neutralizer is provided, ions can be neutralized when cleaning the substrate with an ion beam gun.

In addition, if an argon plasma gun is provided on the side of the vacuum peruger, it can be used as an ion source for cleaning the evaporation substrate before evaporation and for making the refractive index uniform during evaporation.

Claims

The scope of the claims

1. In a high-frequency ion plating deposition apparatus for depositing a deposition substrate (15) in a vacuum peruger (13),

A deposition substrate dome (17) for supporting the deposition substrate (15), one or more deposition sources (19) arranged opposite to the deposition substrate dome (17),

A first high-frequency ring (23), which is disposed near and directly above each of the evaporation sources (19), and whose both ends are connected to a first high-frequency power supply (21);

A second high-frequency ring (27) which is provided close to the vapor deposition substrate dome (17), and both ends of which are connected to a second high-frequency power supply (25);

A high-frequency ion plating steaming apparatus characterized by comprising:

2. A dielectric material such as silicon dioxide or aluminum oxide is melt-adhered to the first high-frequency ring (23) and the second high-frequency ring (27). 2. The high-frequency ion plating vapor deposition apparatus according to item 1.

3. The high-frequency ion plating / evaporating apparatus according to claim 1, further comprising a film thickness meter for measuring the film thickness of the deposited film.

4. The high-frequency ion plating apparatus according to claim 3, wherein the film thickness meter is a quartz film thickness meter provided above the vacuum peruger (13).

5. The thickness gauge is located above or below the vacuum peruger (13). 4. The high-frequency ion plating vapor deposition according to claim 3, characterized in that it is an optical film thickness meter provided in or on a part thereof.

6. The high-frequency ion plating vapor deposition apparatus according to any one of claims 1 to 5, further comprising an ion beam gun (33). .

7. The high frequency ion plating vapor deposition apparatus according to claim 6, further comprising a neutralizer (35).

8. The high-frequency ion plating according to claim 6, wherein the ion beam gun (33) is disposed on a lower portion or a side surface of the vacuum peruger (13). Evaporation equipment.

9. Radio frequency ion plating according to claim 8, characterized in that the neutralizer (35) is arranged on the lower or side of the vacuum peruger (13). Evaporation equipment.

10. The high-frequency ion plating vapor deposition apparatus according to any one of claims 1 to 9, further comprising an argon plasma gun (37).

1 1. Vacuum container (1 3) whose inside is maintained in a substantially vacuum,

Support means (17) for supporting the deposition substrate (15) inside the vacuum vessel (13);

A discharge means (19) which is arranged at a position facing the support means (17) and discharges a deposition material;

The vapor deposition material that is disposed between the supporting means (17) and the discharging means (19) and disposed by the discharging means (19), and is discharged from the discharging means (19). Means of ionization (23) When,

A negative self-biased electric field is provided between the support means (17) and the emission means (19), closer to the support means (17), and near the support means (17). Electric field generating means (27) for generating

A vapor deposition device comprising:

1 2. The ionization means (23) is a first ring to which high-frequency power is applied, and the deposition material is ionized by plasma generated by a magnetic field of the ring. The vapor deposition apparatus according to claim 11, characterized in that:

13. The vapor deposition apparatus according to claim 12, wherein both ends of the first ring are connected to a first high-frequency power supply (21), and high-frequency power is applied. .

14. The vapor deposition apparatus according to claim 12, wherein a dielectric material is attached to the first ring.

1 5. The electric field generating means (27) is a second ring to which high-frequency power is applied, and the negative self-bias electric field generated near the supporting means (17) is the second ring. The vapor deposition apparatus according to claim 11, wherein the vapor is generated by plasma generated by a magnetic field of the ring.

16. The vapor deposition apparatus according to claim 15, wherein both ends of the second ring are connected to a second high-frequency power supply (25), and high-frequency power is applied. .

17. The vapor deposition apparatus according to claim 15, wherein a dielectric material is attached to the first ring.

1 8. Negative self-bias generated near the support means (17) The vapor deposition apparatus according to claim 11, further comprising control means for controlling a source electric field.

19. The control means controls the negative self-bias electric field generated in the vicinity of the support means (17) by adjusting the magnitude of the current supplied to the generation means. The vapor deposition apparatus according to claim 18, characterized in that: