WO2003012160A1 - Systeme de galvanoplastie haute frequence par depot par evaporation sous vide - Google Patents

Systeme de galvanoplastie haute frequence par depot par evaporation sous vide Download PDF

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Publication number
WO2003012160A1
WO2003012160A1 PCT/JP2001/006601 JP0106601W WO03012160A1 WO 2003012160 A1 WO2003012160 A1 WO 2003012160A1 JP 0106601 W JP0106601 W JP 0106601W WO 03012160 A1 WO03012160 A1 WO 03012160A1
Authority
WO
WIPO (PCT)
Prior art keywords
vapor deposition
frequency
ring
ion plating
vacuum
Prior art date
Application number
PCT/JP2001/006601
Other languages
English (en)
Japanese (ja)
Inventor
Fumio Matsumura
Original Assignee
Asahi Optronics, Ltd.
Sun Instruments, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Optronics, Ltd., Sun Instruments, Inc. filed Critical Asahi Optronics, Ltd.
Priority to PCT/JP2001/006601 priority Critical patent/WO2003012160A1/fr
Publication of WO2003012160A1 publication Critical patent/WO2003012160A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32422—Arrangement for selecting ions or species in the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Definitions

  • the present invention relates to a high-frequency ion plating vapor deposition apparatus using a high-frequency ring, and more particularly to a vapor deposition apparatus and a vapor deposition method capable of efficiently producing a high-performance optical dielectric vapor deposition film.
  • FIG. 7 is a diagram showing a basic configuration of a conventional high-frequency ion plating vapor deposition apparatus.
  • the high-frequency ion plating deposition apparatus 51 shown in FIG. 7 is provided with a vacuum bell jar 53 that can maintain the inside of the apparatus in a substantially vacuum state.
  • a vapor deposition substrate dome 57 is disposed in the upper part of the vacuum bell jar 53, and the vapor deposition substrate 55 to be vapor deposited is fixed thereon.
  • a deposition source 59 is arranged in the lower part of the vacuum peruger 53.
  • a high-frequency ring 63 is disposed between the evaporation source 59 and the evaporation substrate dome 57.
  • the diameter of the high-frequency ring 63 is only slightly smaller than the inner diameter of the vacuum peruger 53.
  • the high frequency power from the high frequency power supply 61 is applied to one end of the high frequency ring 63.
  • the conventional high-frequency ion-plating vapor deposition apparatus 51 is configured as described above, whereby plasma is generated in the vacuum peruger 53 to ionize the vapor-deposited substance, thereby being ionized.
  • Deposited material 6 5 is attached to the vapor deposition substrate 55 fixed on the vapor deposition substrate dome 57 by the negative self-bias electric field generated in the vapor deposition substrate dome 57.
  • the conventional technique when compared with a vacuum deposition method using other ions, such as an argon plasma gun method, the conventional technique has a problem that the ionization rate of the deposited material is as low as 5% or less. Further, the adhesive force of the vapor deposition material at the time of film formation is determined by the negative self-bias electric field of the vapor deposition substrate dome 57, but there is a problem that it is small.
  • An object of the present invention is to improve the uniformity and efficiency of ionization of a deposition substance in a vacuum peruger in order to solve the above-mentioned problems of the conventional example.
  • Another object of the present invention is to provide a high-frequency ion plating deposition apparatus capable of forming a uniform and good deposited film on a deposition substrate.
  • a high-frequency ion plating deposition apparatus for performing deposition on a deposition substrate (15) in a vacuum peruger (13), wherein the deposition substrate (15) is supported.
  • the deposition substrate dome (17) to be formed, one or more deposition sources (19) arranged opposite to the deposition substrate dome (17), and a position substantially immediately above each of the deposition sources (19), respectively.
  • a first high-frequency ring (23) having both ends connected to a first high-frequency power supply (21); and a vapor deposition substrate dome (17) provided in close proximity to the first high-frequency ring (23).
  • a high-frequency ion plating / evaporation apparatus comprising: a second high-frequency ring (27) having both ends connected to a second high-frequency power supply (25).
  • the impedance matching state between the high-frequency power supply and the high-frequency ring can be kept constant regardless of the degree of vacuum of the vacuum peruger, and the intensity of the induced magnetic field generated by the high-frequency ring can be maintained. Therefore, a uniform and favorable desired vapor-deposited film can be formed on the vapor-deposited substrate.
  • a dielectric material such as silicon dioxide or aluminum oxide may be melt-adhered to the first high frequency ring (23) and the second high frequency ring (27).
  • the high frequency ion plating deposition apparatus of the inductive coupling type By configuring the high frequency ion plating deposition apparatus of the inductive coupling type in this way, it is possible to suppress the material of the high frequency ring from being ionized by electric discharge. In addition, since the material of the high-frequency ring can be prevented from adhering to the deposition substrate, a good deposited film can be formed.
  • the high-frequency ion plating deposition apparatus may include a plurality of deposition sources, and may further include a thickness gauge for measuring the thickness of the deposited film corresponding to each deposition source.
  • the film thickness gauge may be a quartz film thickness meter provided on the upper part of the vacuum peruger (13), or the upper part or the lower part or both of the vacuum perger (13) It may be an optical film thickness meter provided in.
  • the high-frequency ion plating deposition apparatus may include an ion beam gun and a neutralizer on a lower portion or a side surface of the vacuum bell jar.
  • an ion beam gun is provided in this manner, it can be used as an ion source for cleaning a deposition substrate before deposition and for making the refractive index of a deposition film uniform. If a neutralizer is provided, ions can be neutralized when cleaning the substrate with an ion beam gun.
  • an argon plasma gun may be provided on a side surface of the vacuum peruger.
  • FIG. 1 is a diagram showing a basic configuration of a high-frequency ion plating vapor deposition apparatus according to a first embodiment.
  • FIG. 2 is a diagram showing a configuration of a high-frequency ion plating / evaporating apparatus according to a second embodiment.
  • the configuration shown in FIG. 1 is further provided with an ion beam gun, a neutralizer, and an argon pump. This indicates that Razmagan has been placed.
  • FIG. 3 is a diagram showing an example of mounting a quartz film thickness gauge on a vacuum peruger.
  • FIG. 4 is a diagram showing an example of mounting an optical film thickness meter.
  • FIG. 5 is a diagram showing an example of mounting an optical film thickness meter.
  • FIG. 6 is a diagram showing a mounting example of an optical film thickness meter.
  • FIG. 7 is a diagram showing a basic configuration of a conventional high frequency ion plating vapor deposition apparatus.
  • FIG. 1 is a diagram showing a basic configuration of a high-frequency ion plating / evaporating apparatus 11 according to a first embodiment.
  • high-frequency ion plating deposition equipment 1 As shown in Fig. 1, high-frequency ion plating deposition equipment 1
  • Numeral 1 has a vacuum peruger 13 as a vacuum vessel capable of maintaining the inside in a substantially vacuum state, and a vapor deposition substrate dome 17 is arranged in the upper part of the vacuum peruger 13.
  • the vapor deposition substrate dome 17 is an example of a supporting means for supporting the vapor deposition substrate 15 to be vapor deposited.
  • a vapor deposition source 19 is arranged in the lower part of the vacuum peruger 13.
  • the deposition source 19 is an example of a discharging unit for discharging a deposition material.
  • a small first high-frequency ring 23 is provided between the evaporation source 19 and the evaporation substrate dome 17 and immediately above the evaporation source 19. Both ends of the first high-frequency ring 23 are connected to a high-frequency power supply 21 to receive high-frequency power.
  • high-frequency electric power having an electric energy of 1.5 KW and an industrial frequency of 1.356 MHz is used, but this is merely an example for easy understanding of the explanation. Therefore, the high frequency power is not limited to this, and various power amounts and frequencies can be used according to the purpose.
  • an electron gun, resistance heating, or the like can be used as the evaporation source 19.
  • a dielectric material not only possess such as a metallic material or a semiconductor material, ion deposition may possibly be any material, for example, S i O 2, P 2 0 5 , B 2 0 3, T a 2 ⁇ 5, N b 2 0 5, T i 0 2, G e O 2 , such as Ru can be utilized.
  • FIG. 1 shows only one evaporation source 19, a plurality of evaporation sources may be arranged. In that case, it will be possible to perform multi-source simultaneous vapor deposition in which films are simultaneously formed from a plurality of vapor deposition sources. For example, when four evaporation sources 19 are arranged, quaternary simultaneous evaporation can be performed.
  • a configuration may be adopted in which a quartz film thickness meter is individually provided for each evaporation source.
  • a second second electrode having a diameter larger than the vapor deposition substrate dome 17 is provided between the vapor deposition source 19 and the vapor deposition substrate dome 17, and at a position close to the vapor deposition substrate dome 17, a second second electrode having a diameter larger than the vapor deposition substrate dome 17 is provided.
  • High-frequency rings 27 are provided. Both ends of the second high-frequency ring 27 are connected to a high-frequency power supply 25 so that high-frequency power is applied.
  • the upper part of the vacuum A crystal thickness gauge (see FIG. 3 described later) may be provided. Further, an optical film thickness meter (see FIG. 4 described later) may be provided at the upper part or the lower part or both of the vacuum perugers 13.
  • the first high-frequency ring 23 and the second high-frequency ring 27 each have a surface in which a dielectric material such as silicon dioxide or aluminum oxide is melt-adhered in advance. A ring is used.
  • the high-frequency ion-plating deposition apparatus 11 induces the deposition material 29 evaporated from the deposition source 19 by the magnetic field of the first high-frequency ring 23. It is ionized by the generated plasma. In that sense, the first high-frequency ring 23 will constitute an ionizing means.
  • the plasma induced by the magnetic field of the second high-frequency ring 27 generates a negative self-bias electric field in the vicinity of the dome 17 of the evaporation substrate, and the ionized evaporation material (evaporation material) described above. 29 is attached to the deposition substrate 15 fixed to the deposition substrate dome 17 to vaporize a desired deposition film. In that sense, the second high-frequency ring 27 will use the electric field generating means.
  • the high-frequency power supply 21 is directly connected to the first high-frequency ring 23, and the high-frequency power supply 25 is directly connected to the second high-frequency ring 27. Therefore, it is possible to maintain a constant state of impedance matching between the high-frequency power supply and the high-frequency ring irrespective of the vacuum of the vacuum peruger 13, which is generated by the high-frequency rings 23 and 27. Induced magnetic field strength can be stably maintained.
  • the vicinity of the evaporation substrate dome 17 The intensity of the negative self-biased electric field generated in the second high-frequency ring 27 can be arbitrarily adjusted by the magnitude of the current flowing through the second high-frequency ring 27, and the first high-frequency ring 23 can be used to adjust the evaporation material 2. Since the region where 9 is ionized is small, the degree of uniformity of ionization energy is high, and an arbitrary ionization efficiency can be obtained depending on the magnitude of the current flowing through the first high-frequency ring 23. The adjustment of the current may be performed manually, but control means such as a computer may be used.
  • the material of the high-frequency ring is discharged or discharged. Even when there is a risk of ionization due to the sputtering effect of the plasma and sticking to the deposition substrate, the metal material of the high-frequency ring can be prevented from being absorbed into the deposition film.
  • the second high-frequency ring 27 for generating the self-biased electric field is basically not subject to the limitation of the size in manufacturing.
  • the size of the high-frequency ion plating deposition apparatus can be increased within the range of the power that can be supplied to 25, so that a large amount of deposition substrates can be generated at one time, and efficient deposition processing can be performed. It can be performed.
  • a high-frequency ring is used as the ionization means, but other configurations may be employed as long as the deposition material can be ionized.
  • a high-frequency ring is used as the electric field generating means.
  • another configuration may be adopted as long as a negative self-bias electric field can be generated in the vicinity of the dome 17 of the vapor deposition substrate.
  • FIG. 2 is a view showing a configuration of a high-frequency ion plating / evaporating apparatus 31 according to the second embodiment.
  • an ion beam gun 33, -a neutralizer 35 and an argon plasma gun 37 are added to the configuration shown in FIG.
  • the same or corresponding components as those in FIG. 1 are denoted by the same reference numerals and description thereof is omitted.
  • the high-frequency ion plating / evaporating apparatus 31 is characterized in that the ion beam gun 33 and the argon plasma gun 37 are disposed, so that cleaning and evaporation before the evaporation of the evaporation substrate 15 are performed.
  • the point is that it can be used as an auxiliary ion source to make the refractive index of the film uniform.
  • the neutralizer 35 ⁇ neutralizes the ions when cleaning the substrate with the ion beam gun 33.
  • a second high-frequency ring 27 that is arranged close to the dome 17 of the vapor deposition substrate and directly connected to the high-frequency power supply 25. It has an ion beam gun 33, an argon plasma gun 37 and a neutralizer 35.
  • the ion vapor deposition method using only the high-frequency ring is, for example, a vapor deposition method using only an argon plasma gun, or an ion beam method such as an ion beam assisted vapor deposition method.
  • a vapor deposition method using only an argon plasma gun or an ion beam method such as an ion beam assisted vapor deposition method.
  • FIG. 3 is a diagram showing an example of mounting a quartz film thickness gauge on a vacuum peruger.
  • FIG. 3 a central part of a vapor deposition substrate dome 17 and a vapor deposition substrate 15 mounted in a vacuum peruger 13 is cut out, and a crystal thickness meter 39 is arranged there.
  • the crystal film thickness gauge may be protruded from the side surface of the vacuum bell jar 13 without cutting out the dome 17 of the deposition substrate.
  • FIG. 4 to FIG. 6 are diagrams showing examples of mounting an optical film thickness meter.
  • light is made incident through a window glass 43 arranged above the vacuum peruger 13 and is reflected by the film thickness monitor substrate 41. 3 It is arranged so that it can be taken out through the upper window glass 4 3.
  • a window glass 45 serving as a light extraction unit is arranged below the vacuum peruger 13.
  • window glasses 43 and 45 are arranged as light incident portions, and incident light from a light source is made to enter from the window glasses 43 and 45, respectively.
  • This configuration is arranged so that both transmitted light and reflected light can be measured.
  • the input and output of light are performed by directly collimating the light emitted from a light source (not shown) by a lens, or by inputting the emitted light to an optical fiber and an optical fiber collimator.
  • a typical input / output method is, but not limited to, a method for inputting / outputting data.
  • a high-frequency ion plating vapor deposition apparatus for performing vapor deposition on a vapor deposition substrate (15) in a vacuum bell jar (13).
  • a vapor deposition substrate dome (17) supporting the vapor deposition substrate (15), one or more vapor deposition sources (19) opposed to the vapor deposition substrate dome (17), and a plurality of vapor deposition sources (19).
  • the impedance matching between the high-frequency power supply and the high-frequency ring is To maintain a constant state regardless of the degree of vacuum
  • the intensity of the induced magnetic field generated by the high-frequency ring can be stabilized, a uniform and favorable desired vapor-deposited film can be formed on the vapor-deposited substrate.
  • a dielectric material such as silicon dioxide or aluminum oxide is melt-adhered to the first high frequency ring (23) and the second high frequency ring (27), the high frequency ring is obtained. This prevents the material from being ionized by the plasma and prevents the material of the high-frequency ring from adhering to the deposition substrate, so that a good deposited film can be formed.
  • a high-frequency ion plating deposition apparatus is provided with a plurality of deposition sources, and further provided with a thickness gauge for measuring the thickness of a deposited film corresponding to each deposition source, it is possible to use a plurality of deposition sources. Multi-source simultaneous vapor deposition for simultaneous film formation can be performed.
  • an ion beam gun is provided at the bottom or side of the vacuum peruger, it can be used as an ion source for cleaning the vapor deposition substrate before vapor deposition and for making the refractive index of the vapor deposited film uniform.
  • ions can be neutralized when cleaning the substrate with an ion beam gun.
  • an argon plasma gun is provided on the side of the vacuum peruger, it can be used as an ion source for cleaning the evaporation substrate before evaporation and for making the refractive index uniform during evaporation.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

L'invention concerne un système de galvanoplastie haute fréquence par dépôt par évaporation sous vide, qui permet d'effectuer une métallisation sous vide sur un substrat de métallisation sous vide (15) dans une cloche sous vide. Le système comprend un dôme de substrat de métallisation sous vide (17) pour soutenir le substrat de métallisation sous vide (15); une ou plusieurs sources de dépôt par évaporation sous vide (19) disposées en face du dôme du substrat de métallisation sous vide (17); un premier anneau haute fréquence (23) disposé quasi directement au-dessus de chaque source de dépôt par évaporation sous vide (19) et dont les parties d'extrémité opposées sont connectées à une première source d'énergie haute fréquence (21); et un second anneau haute fréquence (27) disposé à proximité du dôme du substrat de métallisation sous vide (17) et dont les parties d'extrémité opposées sont connectées à une seconde source d'énergie haute fréquence (25). Cette disposition permet de former de manière impeccable et uniforme une couche de dépôt par évaporation sous vide désirée sur un substrat de métallisation sous vide.
PCT/JP2001/006601 2001-07-31 2001-07-31 Systeme de galvanoplastie haute frequence par depot par evaporation sous vide WO2003012160A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/JP2001/006601 WO2003012160A1 (fr) 2001-07-31 2001-07-31 Systeme de galvanoplastie haute frequence par depot par evaporation sous vide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2001/006601 WO2003012160A1 (fr) 2001-07-31 2001-07-31 Systeme de galvanoplastie haute frequence par depot par evaporation sous vide

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WO2003012160A1 true WO2003012160A1 (fr) 2003-02-13

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010100913A (ja) * 2008-10-24 2010-05-06 Citizen Tohoku Kk 薄膜形成装置および薄膜形成方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60251269A (ja) * 1984-05-25 1985-12-11 Shinku Kikai Kogyo Kk イオンプレ−テイング方法および装置
JPS63109162A (ja) * 1986-10-24 1988-05-13 Res Dev Corp Of Japan イオンプレ−テイング方法とその装置
JPH0196823A (ja) * 1987-10-08 1989-04-14 Hitachi Maxell Ltd 磁気記録媒体の製造方法
US5164599A (en) * 1991-07-19 1992-11-17 Eaton Corporation Ion beam neutralization means generating diffuse secondary emission electron shower
JPH07180055A (ja) * 1993-12-22 1995-07-18 Toshiba Glass Co Ltd 真空成膜装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60251269A (ja) * 1984-05-25 1985-12-11 Shinku Kikai Kogyo Kk イオンプレ−テイング方法および装置
JPS63109162A (ja) * 1986-10-24 1988-05-13 Res Dev Corp Of Japan イオンプレ−テイング方法とその装置
JPH0196823A (ja) * 1987-10-08 1989-04-14 Hitachi Maxell Ltd 磁気記録媒体の製造方法
US5164599A (en) * 1991-07-19 1992-11-17 Eaton Corporation Ion beam neutralization means generating diffuse secondary emission electron shower
JPH07180055A (ja) * 1993-12-22 1995-07-18 Toshiba Glass Co Ltd 真空成膜装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010100913A (ja) * 2008-10-24 2010-05-06 Citizen Tohoku Kk 薄膜形成装置および薄膜形成方法

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