JPS61119669A - Ion plating apparatus - Google Patents

Abstract

PURPOSE:To form coating film stably on a material to be treated, by controlling strength of magnetic field for deflecting thermal electron, bias voltage, filament voltage, etc., impressed to a filament for generating thermal electron, in ion plating apparatus of metal. CONSTITUTION:A vaporizing source 7 of a metal 6 to be vapor deposited, a filament 9, the material 5 to be treated are arranged in a bell jar 1. Inside thereof is exhausted to decrease the pressure, inert gas such as Ar is introduced from a gas introducing apparatus 4, electricity is conducted to the filament 9 to generate thermal electron. Simultaneously electric discharge is caused between the filament 9 and the source 7 by a bias voltage 13, thermal electron is deflected by a magnetic field due to an electromagnetic apparatus 8, allowed to impinge to the metal 6 to vaporize it. Metal vapor is ionized by thermal electron when being passe through the filament 9, and ion plated on the surface of the material 5. In this case, magnetic field intensity, bias voltage, filament voltage 12 are controlled suitably to ion plate the vapor of the metal 6 stably on the surface of the treating material.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an ion plating apparatus that forms a film on a workpiece by an ion plating method.

[Prior art] Ion plating methods that have been commercially put into practical use are hollow cathode discharge methods (H, C, D,
method), arc discharge method, and high frequency excitation method (R, F, method).

In this method, the discharge intensity changes depending on the gas pressure, so the electron beam current changes, and therefore the evaporation rate and ionization rate change depending on the gas pressure. Therefore, when performing a reaction, the gas pressure, evaporation rate, and ionization rate cannot be independently controlled, so color reproducibility is poor for decorative items such as watch cases and glasses.

In addition, the arc discharge method or R,F method is generally
Since an electron gun or a high frequency power source that requires a high accelerating voltage of several kilovolts or more is used, equipment costs are high, and there are many abnormal discharges, resulting in frequent interruptions of ion plating.

[Object of the Invention] An object of the present invention is to provide an ion plating apparatus that can form a stable film on an object to be processed.

[Summary of the Invention] In order to achieve the above object, the present invention comprises an evaporation source installed in a magnetic field and a filament to which a negative bias voltage is applied to the evaporation source. By focusing the thermionic electrons on the evaporation source using the magnetic field and colliding with the evaporation source, the metal placed in the evaporation source is melted and evaporated. The steady state evaporation rate and ionization rate of the metal can be achieved by controlling at least one of the strength of the magnetic field, the bias voltage, or the voltage supplied to the filament. It is characterized by the fact that it maintains the

〔Example] Hereinafter, one embodiment of the present invention will be described based on the drawings.

A vacuum pump 2 and a gas introduction device 4 having a needle valve 3 are connected to the bell jar 1, and a workpiece 5 is disposed above the bell jar 1, and a crucible containing a metal 6 to be evaporated is disposed below. An evaporator R7 consisting of the evaporator R7 and an electromagnetic device 8 provided around the evaporator source 7 are arranged. Further, a filament 9 is placed above the evaporation source 7, and a shutter 10 is placed between the filament 9 and the object 5 to be processed.

In the figure, 11 is a power source for applying negative charges to the object to be processed 5, 12 is a filament power source for applying negative charges to the filament, 13 is a bias power source, and 14 is a power source for the electromagnetic device.

After the inside of the bell jar 1 is evacuated to a high vacuum state by the vacuum pump 2, 1 to 1
Inert gas is introduced from the gas introduction device 4 to OX10-3 Torr, and a voltage is applied to the filament 9. Next, a negative bias voltage of 0 to 100 V is applied to the filament 9 to cause discharge between the filament 9 and the evaporation source 7. Then, the thermoelectrons emitted from the filament 9 are transferred to the electromagnetic device 8.
Due to the generated magnetic field, the magnetic field converges on the evaporator R7 while rotating, and collides with the metal 6 housed in the evaporator R7. This collision causes the metal 6 to melt and evaporate. While passing between the evaporation R7 and the filament 90, this evaporated metal is ionized by colliding with thermal electrons that are being generated one after another. In this way, when the amount of evaporation of the metal 6 reaches a certain level or more, the discharge continues regardless of the pressure of the introduced inert gas. By controlling the discharge current at this time by the magnetic field strength, bias voltage, and filament voltage, a constant evaporation rate and ionization rate can be obtained. After this state is established, the inert gas is shut off and the reactive gas is introduced, thereby forming a desired coating on the object to be processed 5.

To explain in detail, the inside of Belljar is 8XIO-
After exhausting to 5 Torr, argon gas was introduced into the bell jar to 3X10-3 Torr, and the filament 9
Apply 6V to. Next, -45 V is applied to the filament 9 using the bias tfX13, and the magnetic field is set to 300 Gauss near the center of the evaporator R7.

After the evaporation of the metal 6, such as titanium, which is stored in the evaporator R7 in advance, becomes constant, a voltage of -100V is applied to the object 5.
Apply. Next, cut off the argon gas, open the shutter and plate titanium for 2 minutes, then introduce C2H2 gas at a constant amount of 255 CCM, introduce N2 gas to maintain 8X10-' Torr, and plate for 10 minutes. I did it. During this blating, the filament voltage was controlled so that a constant current of 120 A flowed between the filament 9 and the evaporator R7.

Under these conditions, using a well-polished stainless steel plate as the object to be processed 5, sample tests were conducted 10 times, and the results were as follows.

That is, based on the color difference ΔE"ab according to the CIE (Commission Internationale de l'Eclairage) display system, the color difference is expressed in NBS units (National
At the Bureau of 5 Standards),
As a result of examining the color difference of nine samples of Ike with respect to sample No. 1, the color difference fell within the range of 0.16 to 0.47. An example of the evaluation for the numerical value in NBS units is as follows, and it is determined that there is almost no color difference.

[Effects of the Invention] As explained above, the present invention can provide an ion blating apparatus that can form an extremely stable film on a workpiece.

[Brief explanation of the drawing]

The drawings are explanatory diagrams showing one embodiment of the present invention. l...belljar, 2...vacuum pump, 4...
・Gas introduction device, 5...Product to be treated, 6...Metal, 7...Evaporation source, 8...Electromagnetic device, 9...
Filament, 11...tiL12=...Filament L13...Bias power supply.

Claims (1)

[Claims] It consists of an evaporation source placed in a magnetic field and a filament to which a negative bias voltage is applied to the evaporation source, and by focusing the thermoelectrons emitted from the filament by the magnetic field and colliding with the evaporation source, Melting and evaporating the metal placed in the evaporation source, colliding the evaporated metal with thermoelectrons while passing between the evaporation source and the filament to ionize it and plate it on the object to be processed, By controlling at least one of the strength of the magnetic field, the bias voltage or the voltage supplied to the filament,
An ion plating apparatus characterized in that the evaporation rate and ionization rate of metal are maintained in a steady state.