JPS63238266A - Sputtering device - Google Patents

Sputtering device

Info

Publication number
JPS63238266A
JPS63238266A JP7063287A JP7063287A JPS63238266A JP S63238266 A JPS63238266 A JP S63238266A JP 7063287 A JP7063287 A JP 7063287A JP 7063287 A JP7063287 A JP 7063287A JP S63238266 A JPS63238266 A JP S63238266A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
film
shield
plasma
sputtering
adhered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7063287A
Inventor
Tanejiro Ikeda
Masahide Yokoyama
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases

Abstract

PURPOSE:To reduce the release of a film deposited on a plasma shield, etc., and to improve the quality of the film on a substrate by providing a heating means and a cooling means on the inside or outside of the plasma shield in the vacuum vessel of the title sputtering device. CONSTITUTION:The heater 6 and the cooling means 5 are provided to the plasma shield 4 furnished to a target 2 in the vacuum vessel 10 of the sputtering device, and the temp. of the plasma shield 4 during sputtering is adjusted to a constant temp. in the range 100-400 deg.C. The vapor-deposited film from the target 2 adhered to the part of the plasma shield 4 closest to the target 2 is adhered to the plasma shield 4 with high strength and is not released from the shield, hence the vapor-deposited film is not adhered to the film on the substrate, the quality of the film is not deteriorated, and the short-circuit accident due to the release of the film can be eliminated.
JP7063287A 1987-03-25 1987-03-25 Sputtering device Pending JPS63238266A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7063287A JPS63238266A (en) 1987-03-25 1987-03-25 Sputtering device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7063287A JPS63238266A (en) 1987-03-25 1987-03-25 Sputtering device

Publications (1)

Publication Number Publication Date
JPS63238266A true true JPS63238266A (en) 1988-10-04

Family

ID=13437208

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7063287A Pending JPS63238266A (en) 1987-03-25 1987-03-25 Sputtering device

Country Status (1)

Country Link
JP (1) JPS63238266A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4966669A (en) * 1988-12-20 1990-10-30 Mitsubishi Denki Kabushiki Kaisha Vacuum-film-forming apparatus and method
JPH04123257U (en) * 1991-04-16 1992-11-06
EP0562035A1 (en) * 1990-12-11 1993-09-29 Lam Research Corporation Minimization of particle generation in cvd reactors and methods
US5589041A (en) * 1995-06-07 1996-12-31 Sony Corporation Plasma sputter etching system with reduced particle contamination

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4966669A (en) * 1988-12-20 1990-10-30 Mitsubishi Denki Kabushiki Kaisha Vacuum-film-forming apparatus and method
EP0562035A1 (en) * 1990-12-11 1993-09-29 Lam Research Corporation Minimization of particle generation in cvd reactors and methods
EP0562035A4 (en) * 1990-12-11 1995-12-13 Lam Res Corp Minimization of particle generation in cvd reactors and methods
EP0562035B2 (en) 1990-12-11 2001-09-05 Lam Research Corporation Minimization of particle generation in cvd reactors and methods
JPH04123257U (en) * 1991-04-16 1992-11-06
US5589041A (en) * 1995-06-07 1996-12-31 Sony Corporation Plasma sputter etching system with reduced particle contamination

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