JPH0196373A - Ion plating apparatus - Google Patents

Ion plating apparatus

Info

Publication number
JPH0196373A
JPH0196373A JP25546387A JP25546387A JPH0196373A JP H0196373 A JPH0196373 A JP H0196373A JP 25546387 A JP25546387 A JP 25546387A JP 25546387 A JP25546387 A JP 25546387A JP H0196373 A JPH0196373 A JP H0196373A
Authority
JP
Japan
Prior art keywords
alumina
vapor
electrode
ionization electrode
evaporation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP25546387A
Other languages
Japanese (ja)
Other versions
JP2592617B2 (en
Inventor
Eiji Komatsu
永治 小松
Masami Nakasone
正美 中曽根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinko Seiki Co Ltd
Original Assignee
Shinko Seiki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Seiki Co Ltd filed Critical Shinko Seiki Co Ltd
Priority to JP62255463A priority Critical patent/JP2592617B2/en
Publication of JPH0196373A publication Critical patent/JPH0196373A/en
Application granted granted Critical
Publication of JP2592617B2 publication Critical patent/JP2592617B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

PURPOSE:To prevent the covering of an ionization-electrode surface with the vapor of alumina, etc., and its attendant inhibition of stable electric discharge by keeping the temp. of an ionization electrode at the evaporation temp. of a vapor deposition material at the time of vapor-depositing an insulating material, such as alumina, onto the surface of a substrate by means of an ion plating apparatus. CONSTITUTION:An insulating material 5, such as alumina, in a vacuum tank 1 is bombarded with an electron beam 4 from an electron gun to undergo evaporation of alumina 5, and thermions are emitted from a thermion-emitting filament 9 made of W to carry out arc discharge between an ionization electrode 7 and the above. Alumina vapor is ionized, by which a vapor deposited film of alumina is formed on a substrate connected to a bias supply 12. At this time, by heating the ionization electrode 7 up to the evaporation temp. of alumina or above, the ion plating of alumina can be stably carried out without causing unstable electric discharge due to the adhesion of alumina to the ionization electrode 7.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、真空中において被覆材料を蒸発させて被蒸
着物表面に蒸着させる装置にかかり、更に詳しく述べれ
ば、被覆材料蒸気をイオン化してから被蒸着物表面に蒸
着させ為装置に関する。
[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to an apparatus for evaporating a coating material in a vacuum and depositing it on the surface of an object to be deposited. This invention relates to an apparatus for depositing on the surface of an object to be deposited.

〔従来の技術〕[Conventional technology]

高真空中において被覆材料の蒸発源に対面して被蒸着物
を配置すると共に、上記蒸発源から上記被蒸着物へ向う
被覆材料蒸気の径路の近傍の上記蒸発源に接近した位置
に、上記蒸発源との間に上記被覆材料を通してアーク放
電を営むよう構成されたイオン化電極を配置してなるイ
オン・プレーティング装置は1例えば実公昭59−40
45号公報に示されている。
The object to be deposited is placed facing the evaporation source of the coating material in a high vacuum, and the evaporator is placed close to the evaporation source near the path of the coating material vapor from the evaporation source to the object to be deposited. An ion plating apparatus comprising an ionizing electrode configured to generate an arc discharge through the above-mentioned coating material between the source and the source is 1, for example, as disclosed in Japanese Utility Model Publication No. 59-40.
This is shown in Publication No. 45.

また、上記蒸発源と上記イオン化装置との間にアーク放
電が起りにくい場合に、アーク放電を起し易くするため
に1両者の間に熱電子放射用フィラメントを配置するこ
とも、上記公報に示されている。
The above publication also discloses that when arc discharge is difficult to occur between the evaporation source and the ionization device, a filament for thermionic emission may be placed between the two to facilitate arc discharge. has been done.

上述のイオン化電極は、アーク放電の際の強い電子衝撃
によって著るしく加熱される。そのために、材料として
高融点で熱伝導率の良いモリブデンの厚肉のものを使用
したり、水冷したりして、放電スポットの著るしい昇温
を防いでいる。
The ionizing electrodes mentioned above are heated significantly by the strong electron bombardment during arc discharge. To this end, a thick molybdenum material with a high melting point and good thermal conductivity is used, and water cooling is used to prevent a significant temperature rise at the discharge spot.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述の従来のイオン・プレーティング装置においては、
イオン化電極には、蒸発源に近い位置にあるために被覆
材料の蒸着、堆積が行われ易い。
In the conventional ion plating apparatus described above,
Since the ionization electrode is located close to the evaporation source, the coating material is easily deposited on the ionization electrode.

被覆材料が、例えばチタ/のような金属である場合には
、イオン化電極の表面に被覆材料が厚く堆積しても、ア
ーク放電は支障なく継続する。しかし、被覆材料が例え
ばアルミナのような絶縁体である場合には、イオン化電
極の表面が絶縁皮膜で覆われる結果、放電が数分間程度
で停止してしまい、長時間にわたる成膜作業は行い得な
かった。
When the coating material is a metal such as titanium, arc discharge continues without any problem even if the coating material is thickly deposited on the surface of the ionizing electrode. However, when the coating material is an insulator such as alumina, the surface of the ionization electrode is covered with an insulating film, and as a result, the discharge stops after a few minutes, making it impossible to perform a long film formation operation. There wasn't.

〔問題点を解決するための手段〕[Means for solving problems]

この発明は、従来、イオン化電極におけるアーク放電の
スポットを可及的に低温にするよう努力していたのとは
反対に、イオン化電極の温度を被覆材料の蒸発温度以上
に維持する手段を設けたものであ、る。
This invention provides a means to maintain the temperature of the ionizing electrode above the evaporation temperature of the coating material, contrary to conventional efforts to keep the arc discharge spot at the ionizing electrode as low as possible. It's something.

イオン化電極を上述のように維持する手段としては、イ
オン化電極をフィラメント状に形成してこれに通電する
方法や、イオン化電極を左程熱伝導性が良好でないタン
グステン等で形成したり。
Means for maintaining the ionization electrode as described above include forming the ionization electrode in the form of a filament and supplying electricity to it, or forming the ionization electrode from tungsten or the like, which does not have as good thermal conductivity.

熱伝導が十分性われない線状材料や薄板材料を用いて形
成して、電子衝撃により所定温度に昇温させる方法があ
る。
There is a method in which it is formed using a linear material or a thin plate material that does not have sufficient thermal conductivity, and the temperature is raised to a predetermined temperature by electron bombardment.

〔作 用〕[For production]

上述のように、イオン化電極が通電または電子衝撃によ
って被覆材料の蒸発温度以上に維持される結果、被覆材
料蒸気はイオン化電極面に凝結しない。その結果、イオ
ン化電極の表面は、常に新鮮な状態に保たれるので、ア
ーク放電は長時間にわたり安定゛して行われる。
As mentioned above, as a result of the ionization electrode being maintained at a temperature above the evaporation temperature of the coating material by energization or electron bombardment, the coating material vapor does not condense on the ionization electrode surface. As a result, the surface of the ionizing electrode is always kept fresh, so arc discharge can be performed stably over a long period of time.

〔実施例〕〔Example〕

第1図において、真空槽1の下底部には排気口2が存在
し、これに連なる真空ポンプによって、槽1内は常に高
真空に排気されている。槽1内の下部には蒸発源3が位
置し、その電子銃部から発せられる電子ビーム4の衝撃
により、被覆材料5は蒸発する。槽1内の上部の、蒸発
源3の真上にあたる位置には、被蒸着物6が配置される
。蒸発源3に接近しその斜上方に、棒状材料で作られた
イオン化電極7が位置し、その両端は槽1外において加
熱電源8に接続されている。蒸発源3とイオン化電極7
との間には1例えばタフゲステン製の熱電子放射フィラ
メント9が位置し、その両端は槽1外で加熱電源10に
接続されている。蒸発源3及びフィラメント9は共に接
地され、イオン化電極7と接地との間にはアーク放電用
の電源11が介在する。被蒸着物6は、槽1外において
直流または高周波のバイアス電源12に接続される。な
お。
In FIG. 1, there is an exhaust port 2 at the bottom of a vacuum tank 1, and the inside of the tank 1 is constantly evacuated to a high vacuum by a vacuum pump connected to this port. An evaporation source 3 is located at the bottom of the tank 1, and the coating material 5 is evaporated by the impact of the electron beam 4 emitted from the electron gun. At the upper part of the tank 1, directly above the evaporation source 3, a deposition target 6 is placed. An ionization electrode 7 made of a rod-shaped material is located close to and diagonally above the evaporation source 3, and both ends of the electrode 7 are connected to a heating power source 8 outside the tank 1. Evaporation source 3 and ionization electrode 7
A thermionic emission filament 9 made of, for example, Toughgesten is located between the tank 1 and the heating power source 10 at both ends thereof. Both the evaporation source 3 and the filament 9 are grounded, and a power source 11 for arc discharge is interposed between the ionization electrode 7 and the ground. The object to be deposited 6 is connected to a DC or high frequency bias power source 12 outside the tank 1 . In addition.

13は必要時に反応ガスを導入する導入口である。Reference numeral 13 denotes an inlet through which a reaction gas is introduced when necessary.

上述の装置において、被覆材料として例えばアルミナの
ような絶縁物を用いる際は、イオン化電極7の材料とし
てはタングステン、或いはモリブデンのような高融点金
属を用い、2000ti前後に通電加熱すればよい。
In the above-described apparatus, when an insulating material such as alumina is used as the coating material, a high melting point metal such as tungsten or molybdenum may be used as the material for the ionization electrode 7, and the material may be electrically heated to about 2000ti.

第1図示の実施例は、イオン化電極7を流れる放電電流
が1例えばIOA以下の少い場合に適するが、この放電
電流が例えば20〜100 Aというように大きな値に
なると、イオン化電極7を加熱電源8によって通電加熱
しなくても、その構造を適切に選ぶことにより、アーク
放電の衝撃を利用した自己加熱によシ、所定の温度に昇
温させることが可能になる。
The embodiment shown in the first diagram is suitable when the discharge current flowing through the ionizing electrode 7 is small, for example, less than 1 IOA, but when this discharge current reaches a large value, for example, 20 to 100 A, the ionizing electrode 7 is heated. By appropriately selecting the structure, it is possible to raise the temperature to a predetermined temperature by self-heating using the shock of arc discharge, even if the power supply 8 does not conduct current heating.

第2図は、このような放電電流が大きい場合に適した実
施例を示しS17はタングステン、モリブデンのような
高融点金属または黒鉛の薄板製のイオン化電極であり、
残余の構成は第1図と同一である。この実施例では、イ
オン化電極17の放電部位に生じた昇温は、その熱が薄
肉のために伝導拡散しにくいこともあって、容易に20
00℃前後の必要温度に到達するので、やはり被覆材料
蒸気の凝着を防ぐことができる。
FIG. 2 shows an embodiment suitable for such a case where the discharge current is large, and S17 is an ionization electrode made of a thin plate of a high melting point metal such as tungsten or molybdenum or graphite;
The remaining configuration is the same as in FIG. In this embodiment, the temperature increase generated at the discharge site of the ionizing electrode 17 can be easily increased by 20°C, partly because the heat is difficult to conduct and diffuse due to the thin wall.
Since the required temperature of around 00° C. is reached, it is also possible to prevent the coating material vapor from adhering.

〔発明の効果〕 以上のように、この発明によるときは、被覆材料として
絶縁性物質を用いる場合に、これらの蒸気がイオン化電
極の表面を覆い、安定な放電を防げるのを効果的に阻止
することができる。
[Effects of the Invention] As described above, according to the present invention, when an insulating substance is used as a coating material, these vapors cover the surface of the ionization electrode and effectively prevent stable discharge. be able to.

従って、従来困難であった絶縁性物質による高品質のイ
オン・プレーティング皮膜の能率的な形成を可能にする
ことができる。
Therefore, it is possible to efficiently form a high quality ion plating film using an insulating material, which has been difficult in the past.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はこの発明の実施例の構成図、第2図はこの発明
の他の実施例の構成図である。 1・・・真空槽、3・・・蒸発源、6・・・被蒸着物、
7及び17・・・イオン化電極、8・・・加熱電源、1
1・・・アーク放電用電源。
FIG. 1 is a block diagram of an embodiment of the invention, and FIG. 2 is a block diagram of another embodiment of the invention. 1... Vacuum chamber, 3... Evaporation source, 6... Evaporation target,
7 and 17... Ionization electrode, 8... Heating power source, 1
1... Arc discharge power supply.

Claims (1)

【特許請求の範囲】[Claims] (1)高真空中において被覆材料の蒸発源に対面して被
蒸着物を配置すると共に、上記蒸発源から上記被蒸着物
へ向う被覆材料蒸気の径路の近傍の上記蒸発源に接近し
た位置に、上記蒸発源との間に上記被覆材料蒸気を通し
てアーク放電を営むよう構成されたイオン化電極を配置
してなるイオン・プレーティング装置において、上記イ
オン化電極を上記被覆材料の蒸発温度以上に維持する手
段を設けたことを特徴とするイオン・プレーティング装
置。
(1) Place the object to be deposited facing the evaporation source of the coating material in a high vacuum, and at a position close to the evaporation source near the path of the coating material vapor from the evaporation source to the object to be deposited. , an ion plating apparatus comprising an ionizing electrode arranged between the evaporation source and the ionizing electrode configured to cause arc discharge through the vapor of the coating material, means for maintaining the ionizing electrode at a temperature equal to or higher than the evaporation temperature of the coating material; An ion plating device characterized by being provided with.
JP62255463A 1987-10-08 1987-10-08 Ion plating equipment Expired - Lifetime JP2592617B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62255463A JP2592617B2 (en) 1987-10-08 1987-10-08 Ion plating equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62255463A JP2592617B2 (en) 1987-10-08 1987-10-08 Ion plating equipment

Publications (2)

Publication Number Publication Date
JPH0196373A true JPH0196373A (en) 1989-04-14
JP2592617B2 JP2592617B2 (en) 1997-03-19

Family

ID=17279115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62255463A Expired - Lifetime JP2592617B2 (en) 1987-10-08 1987-10-08 Ion plating equipment

Country Status (1)

Country Link
JP (1) JP2592617B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006037153A (en) * 2004-07-26 2006-02-09 Shinko Seiki Co Ltd Film deposition apparatus and film deposition method

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS595732U (en) * 1982-07-01 1984-01-14 三菱重工業株式会社 fuel adjustment linkage device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS595732U (en) * 1982-07-01 1984-01-14 三菱重工業株式会社 fuel adjustment linkage device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006037153A (en) * 2004-07-26 2006-02-09 Shinko Seiki Co Ltd Film deposition apparatus and film deposition method

Also Published As

Publication number Publication date
JP2592617B2 (en) 1997-03-19

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