JP3138810B2 - Ion plating equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion plating apparatus, in particular, an electrode plate and a substrate for forming a thin film, which are disposed on an upper portion of a vacuum chamber so that the electrode plate faces upward. Of an ion plating apparatus equipped with a high-frequency power supply for electrically connecting the electrode plate and the material for deposition and inducing a negative self-bias on the electrode plate during the thin film formation process. Regarding improvement.

[0002]

2. Description of the Related Art Conventionally, in this type of ion plating apparatus, an electrode plate is also used as a substrate holder, and the electrode plate and the substrate are arranged in a vacuum chamber in a state of being overlapped.

[0003]

In the above-mentioned ion plating apparatus, when the output of the high-frequency power supply is fixed, the volume of the electrode plate and the negative self-bias induced by the electrode plate are substantially inversely proportional. The relationship is established. in this case,
The lower the negative self-bias, the lower the plasma density in the vacuum chamber.

In order to form a high-density thin film, a predetermined relationship must be established between the volume of the electrode plate and the negative self-bias.

[0005] In the conventional apparatus, since the electrode plate and the substrate are overlapped, when the substrate is a metal plate,
Since it functions in substantially the same way as an electrode plate, a laminated electrode plate composed of an original electrode plate and a substrate is configured there.

In this laminated electrode plate, if it has a suitable volume for obtaining a high-density thin film, its thickness is increased, and accordingly, the surface area of the electrode plate and, accordingly, the formation of a thin film on the substrate are correspondingly increased. There has been a problem that the area of the surface is reduced, and it is not possible to meet the demand for widening the thin film.

[0007]

SUMMARY OF THE INVENTION According to the present invention, an electrode plate and a substrate are electrically insulated so that the electrode plate maintains its original thickness, and the substrate is reliably irradiated with deposited particles and ions thereof. It is an object of the present invention to provide an ion plating apparatus capable of achieving widening of a high-density thin film.

[0008] To achieve the above object, according to the present invention,
An electrode plate and a substrate for forming a thin film are disposed on an upper portion in a vacuum chamber so that the electrode plate is on the upper side, and a deposition material is disposed on a lower portion in the vacuum chamber. in the ion plating apparatus having a high-frequency power supply equipment to induce a negative self-bias on the electrode plate is a thin film formation process as well as electrically connecting the evaporation material, before Symbol substrate
Is separated from the electrode plate and the substrate is
An ion plating apparatus is provided which is disposed within a range in which the negative self-bias of the electrode plate is reflected so that the negative self-bias of the electrode plate appears .

With the above construction, the thickness of the electrode plate is reduced to approximately one half or less of that of the conventional laminated electrode plate, whereby the surface area of the electrode plate, and hence the area of the thin film forming surface of the substrate, is reduced. It is possible to enlarge more than approximately two times.

Further to the substrate, because a negative self-bias of the electrode plates are revealing, reliably irradiate the ions and vapor deposition particles on the substrate, thereby a high density, and to form a wide thin film It is possible.

[0011]

DETAILED DESCRIPTION OF THE INVENTION Ion plating shown in FIG.
In the apparatus 1, the electrode plate 3 and the
And a thin film forming substrate 4 with its electrode plate 3 facing upward.
Is established. The electrode plate 3 is formed of a conductive shield 5 having a lid shape.
An electrically insulating frame 7 is provided on the downward opening end face. ₁Mounted via
Have been. The substrate 4 has a frame-shaped conductive holder 6.
, And the holder 6 is provided at the peripheral edge of the downward facing surface of the electrode plate 3.
Electrically insulating frame 7_TwoMounted through. this
Thereby, the electrode plate 3 and the substrate 4 are electrically insulated.

A hollow support shaft 8 is provided on the outer surface of the upper wall 5a of the shield 5, and the support shaft 8 is rotatably supported on the upper wall 10 of the vacuum chamber 2 via a bearing member 9. A driven gear in a gear box 11 is connected to an upper end of the support shaft 8 protruding from the bearing member 9, and a drive shaft 13 of a motor 12 is connected to a drive gear in the gear box 11. 11a is a support member of the gear box 11.

Below the substrate 4, the bottom wall 1 of the vacuum chamber 2
A conductive base 15 is provided on the base 4, a conductive hearth 17 for containing the material 16 for vapor deposition is fixed on the base 15, and an electron gun 18 is provided beside the hearth 17.

A high frequency power supply 19 is provided outside the vacuum chamber 2. The equipment 19 comprises a high frequency power supply 20 capable of transmitting a high frequency of 13.56 MHz and a matching circuit means 21 having a blocking capacitor electrically connected thereto. A connection line 22 extending from the matching circuit means 21 is connected to the electrode plate 3 through the hollow support shaft 8. The connection line 23 extending from the high frequency power supply 20 is grounded, and the connection line 24 branched from the connection line 23 is connected to the peripheral wall 2 of the vacuum chamber 2.
5 through the grommet 26 provided on the conductive substrate 15.
Connected to. Thereby, the electrode plate 3 and the vapor deposition material 16
Are electrically connected to the high-frequency power supply equipment 19.

A gas introduction pipe 2 is provided at an intermediate portion of the peripheral wall 25 of the vacuum chamber 2.
7 is provided, and a vacuum exhaust pipe 28 is provided below the peripheral wall 25.

The vacuum chamber 2 is made of stainless steel.
The electrode plate 3 is made of an Al plate having a thickness of 1 to 2 mm, and the substrate 4 is made of a Cu plate having a thickness of 3 to 4 mm. The distance d between the electrode plate 3 and the substrate 4 is set to 1 to 40 mm, whereby the substrate 4 is arranged within a range in which the negative self-bias of the electrode plate 3 is reflected. In this case, the substrate 4 is separated from the electrode plate 3
Is in a range where the electric action of the electrode plate 3 reaches.
Therefore, when a negative self-bias is induced in the electrode plate 3,
Negative self-bias is applied to the substrate 4 and the electrode plate 3.
Appears as if they had been joined. Shield 5 and the holder 6 is composed of aluminum, also two frames 7 _1, 7 ₂ is composed of alumina, further Haas 17 is composed of molybdenum.

In ion plating, first,
For example, SiO ₂ powder was put into the hearth 17 as the material 16 for vapor deposition. Further, the inside of the vacuum chamber 2 is evacuated through a vacuum exhaust pipe 28, and then O ₂ gas, which is a reactive gas, is introduced into the vacuum chamber 2 through a gas introduction pipe 27 to evacuate the vacuum chamber 2 to 2 × 1
The vacuum was kept at 0 ^-4 Torr. g is an O ₂ gas molecule.

Then, the high frequency power supply 19 is operated to induce a negative self-bias on the electrode plate 3, generate the plasma P over the entire inside of the vacuum chamber 2, and drive the motor 12 in order to form a uniform thin film. Then, the electrode plate 3 and the substrate 4 were rotated, and further, the electron gun 18 was operated to irradiate the electron beam b to the material 16 for vapor deposition to generate a large number of vapor-deposited particles p.

Some of the deposited particles p are ionized by the plasma P, and then the deposited particles p and the ions i are accelerated by the negative self-bias of the electrode plate 3 and the substrate on which the negative self-bias appears . 4 was reliably irradiated.

By setting the ion plating time to about 3 minutes, the thickness is 0.15 μm and the density is 1.4.
An SiO ₂ thin film of 5 g / cm ³ could be formed.

The area of the surface of the substrate 4 on which a high-density thin film can be formed is 500 mm × 500 mm = 25 in the case of the conventional example.
Although the limit was 000 mm ² , in the case of the embodiment, it was 80 mm.
0 mm × 1,000 mm = 800,000 mm ^{2 is} possible, and 3.2 times the width of the conventional example can be achieved. In the above embodiment, the negative self-bias of the electrode plate 3 was about 500V.

In the above embodiment, the electrode plate 3 and the substrate 4 were rotated, but this is not an essential requirement. The substrate 4 is not limited to a metal plate, but may be a synthetic resin plate, a glass plate, or the like.

[0023]

According to the present invention, it is possible to provide an ion plating apparatus capable of realizing a wide high-density thin film by employing the above simple means.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view of an ion plating apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Ion plating apparatus 2 ... Vacuum tank 3 ... Electrode plate 4 ... Substrate 16 ... Material for vapor deposition 19 ... High frequency power supply equipment

──────────────────────────────────────────────────続 き Continued on the front page (58) Fields surveyed (Int. Cl. ⁷ , DB name) C23C 14/00-14/58 C30B 23/08 H01L 21/203 JICST file (JOIS)

Claims (1)

(57) [Claims] An electrode plate (3) is provided on an upper part in a vacuum chamber (2).
And a substrate (4) for forming a thin film, with its electrode plate (3) facing upward, and a vapor deposition material (16) disposed below the vacuum chamber (2). Ion plating provided with a high-frequency power supply (19) for electrically connecting the plate (3) and the material for vapor deposition (16) and for inducing a negative self-bias on the electrode plate (3) in the process of forming a thin film. in the apparatus, prior Symbol substrate (4), the electrode plate
(3) and separated from the substrate (4) by the electrode
An ion plating apparatus characterized in that the electrode plate (3) is disposed within a range in which the negative self-bias of the electrode plate (3) is reflected so that the negative self-bias of the plate (3) appears .