JPS5698820A - Preparation of amorphous semiconductor film - Google Patents

Preparation of amorphous semiconductor film

Info

Publication number
JPS5698820A
JPS5698820A JP117680A JP117680A JPS5698820A JP S5698820 A JPS5698820 A JP S5698820A JP 117680 A JP117680 A JP 117680A JP 117680 A JP117680 A JP 117680A JP S5698820 A JPS5698820 A JP S5698820A
Authority
JP
Japan
Prior art keywords
substrate
holder
electrode
volts
torr
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP117680A
Other languages
Japanese (ja)
Other versions
JPH0142125B2 (en
Inventor
Takeshi Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP117680A priority Critical patent/JPS5698820A/en
Publication of JPS5698820A publication Critical patent/JPS5698820A/en
Publication of JPH0142125B2 publication Critical patent/JPH0142125B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain an amorphous semiconductor having a desirable structure and composition due to the decomposition of glow discharge by providing different direct potentials to a substrate and electrodes adjacent to it and controlling an electric field distribution. CONSTITUTION:A clear and pure glass substrate is set on a holder 7. After exhausting a device less than 10<-8> Torr, a mixture gas 3 of H2 and SiH4 is introduced into a chamber 1 to keep it at 2X10<-1> Torr of vacuum. After heating the substrate at 300 deg.C, a high frequency wave having 13.5MHz is applied to an electrode to prepare Si ion and Si-H<+> ion. An electrode 8 for controlling an electric field is set approximately 10mm. apart from the holder 7, and a positive or a negative voltage having several volts to several ten volts and 0 to several volts are given to the holder 7 and the electrode 8 respectively from direct current sources 8 and 9. From this results, the velocity and the transporting amount of the formed ions to the substrate can be controlled accurately. Accordingly, an amorphous Si film having a desirable structure and composition can be obtained.
JP117680A 1980-01-09 1980-01-09 Preparation of amorphous semiconductor film Granted JPS5698820A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP117680A JPS5698820A (en) 1980-01-09 1980-01-09 Preparation of amorphous semiconductor film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP117680A JPS5698820A (en) 1980-01-09 1980-01-09 Preparation of amorphous semiconductor film

Publications (2)

Publication Number Publication Date
JPS5698820A true JPS5698820A (en) 1981-08-08
JPH0142125B2 JPH0142125B2 (en) 1989-09-11

Family

ID=11494122

Family Applications (1)

Application Number Title Priority Date Filing Date
JP117680A Granted JPS5698820A (en) 1980-01-09 1980-01-09 Preparation of amorphous semiconductor film

Country Status (1)

Country Link
JP (1) JPS5698820A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212129A (en) * 1982-06-03 1983-12-09 Anelva Corp Manufacture of amorphous semiconductor film
JPS58212128A (en) * 1982-06-03 1983-12-09 Shigeru Minomura Manufacture of amorphous semiconductor film
JPS5939713A (en) * 1982-08-29 1984-03-05 Agency Of Ind Science & Technol Thin silicon film containing crystallite and its manufacture
JPS5988821A (en) * 1982-11-13 1984-05-22 Toa Nenryo Kogyo Kk Manufacture of amorphous silicon semiconductor thin film
JPS60117715A (en) * 1983-11-30 1985-06-25 Zenko Hirose Forming method of film
JPS60147114A (en) * 1984-01-11 1985-08-03 Daihen Corp Manufacturing device for photovoltaic element
JPS60239015A (en) * 1984-05-11 1985-11-27 Toyobo Co Ltd Formation of amorphous silicon film
JPS61278131A (en) * 1985-06-03 1986-12-09 Agency Of Ind Science & Technol Manufacture of silicon group alloy thin-film

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212129A (en) * 1982-06-03 1983-12-09 Anelva Corp Manufacture of amorphous semiconductor film
JPS58212128A (en) * 1982-06-03 1983-12-09 Shigeru Minomura Manufacture of amorphous semiconductor film
JPS5939713A (en) * 1982-08-29 1984-03-05 Agency Of Ind Science & Technol Thin silicon film containing crystallite and its manufacture
JPS6367555B2 (en) * 1982-08-29 1988-12-26 Kogyo Gijutsu Incho
JPS5988821A (en) * 1982-11-13 1984-05-22 Toa Nenryo Kogyo Kk Manufacture of amorphous silicon semiconductor thin film
JPS60117715A (en) * 1983-11-30 1985-06-25 Zenko Hirose Forming method of film
JPH0456449B2 (en) * 1983-11-30 1992-09-08 Zenko Hirose
JPS60147114A (en) * 1984-01-11 1985-08-03 Daihen Corp Manufacturing device for photovoltaic element
JPS60239015A (en) * 1984-05-11 1985-11-27 Toyobo Co Ltd Formation of amorphous silicon film
JPS61278131A (en) * 1985-06-03 1986-12-09 Agency Of Ind Science & Technol Manufacture of silicon group alloy thin-film

Also Published As

Publication number Publication date
JPH0142125B2 (en) 1989-09-11

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