JPS55102237A - Method and apparatus for plasma processing - Google Patents

Method and apparatus for plasma processing

Info

Publication number
JPS55102237A
JPS55102237A JP925679A JP925679A JPS55102237A JP S55102237 A JPS55102237 A JP S55102237A JP 925679 A JP925679 A JP 925679A JP 925679 A JP925679 A JP 925679A JP S55102237 A JPS55102237 A JP S55102237A
Authority
JP
Japan
Prior art keywords
plasma
collector
deposited
shape
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP925679A
Other languages
Japanese (ja)
Other versions
JPS6235265B2 (en
Inventor
Takashi Tsuchimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP925679A priority Critical patent/JPS55102237A/en
Publication of JPS55102237A publication Critical patent/JPS55102237A/en
Publication of JPS6235265B2 publication Critical patent/JPS6235265B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Abstract

PURPOSE:To deposit a film of an objective material by using He and the like as a plasma generating gas, introducing the gas containing a material to be deposited, and causing a plasma reaction. CONSTITUTION:He and the like are introduced from a hole 4 into a plasma source 3 under a suitable gas pressure. A primary plasma flow 16 is generated, and reaches a collector 6. At the same time, SiH4 gas 18 is introduced under the specified temperature. Then, SiH4 which is diffused and arrived at the collector, receives energy from the radical which is generated from the He plasma, and is separated and deposited on the collector as an Si film. The action of the radicals of He and Ne whose ionization voltages are especially high is intensive. If an appropriate potential is applied to the plasma flow, the decomposition efficiency is increased. Furthermore, if the substrate temperature and the plasma potential are properly selected, the Si crystal which is deposited can be controlled from an amorphous shape to a polycrystal shape and to a single crystal shape.
JP925679A 1979-01-31 1979-01-31 Method and apparatus for plasma processing Granted JPS55102237A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP925679A JPS55102237A (en) 1979-01-31 1979-01-31 Method and apparatus for plasma processing

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP925679A JPS55102237A (en) 1979-01-31 1979-01-31 Method and apparatus for plasma processing

Publications (2)

Publication Number Publication Date
JPS55102237A true JPS55102237A (en) 1980-08-05
JPS6235265B2 JPS6235265B2 (en) 1987-07-31

Family

ID=11715330

Family Applications (1)

Application Number Title Priority Date Filing Date
JP925679A Granted JPS55102237A (en) 1979-01-31 1979-01-31 Method and apparatus for plasma processing

Country Status (1)

Country Link
JP (1) JPS55102237A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6122628A (en) * 1984-07-11 1986-01-31 Hitachi Ltd Dry etching device
JPS61135126A (en) * 1984-12-06 1986-06-23 Hitachi Ltd Equipment of plasma treatment
JPS61281519A (en) * 1985-06-07 1986-12-11 Matsushita Electric Ind Co Ltd Formation of amorphous silicon film
EP0727508A1 (en) * 1995-02-16 1996-08-21 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Method and apparatus for treatment of substrate surfaces
EP1905867A1 (en) 2006-09-28 2008-04-02 Fujifilm Corporation Process for forming a film, piezoelectric film, and piezoelectric device
JP2009510749A (en) * 2005-09-30 2009-03-12 インターナショナル・ビジネス・マシーンズ・コーポレーション Immersion optical lithography system with protective optical coating and method of forming optical elements of the system

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6122628A (en) * 1984-07-11 1986-01-31 Hitachi Ltd Dry etching device
JPS61135126A (en) * 1984-12-06 1986-06-23 Hitachi Ltd Equipment of plasma treatment
JPS61281519A (en) * 1985-06-07 1986-12-11 Matsushita Electric Ind Co Ltd Formation of amorphous silicon film
EP0727508A1 (en) * 1995-02-16 1996-08-21 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Method and apparatus for treatment of substrate surfaces
JP2009510749A (en) * 2005-09-30 2009-03-12 インターナショナル・ビジネス・マシーンズ・コーポレーション Immersion optical lithography system with protective optical coating and method of forming optical elements of the system
EP1905867A1 (en) 2006-09-28 2008-04-02 Fujifilm Corporation Process for forming a film, piezoelectric film, and piezoelectric device

Also Published As

Publication number Publication date
JPS6235265B2 (en) 1987-07-31

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