JPS5778941A - Method and apparatus for plasma deposition - Google Patents

Method and apparatus for plasma deposition

Info

Publication number
JPS5778941A
JPS5778941A JP15506580A JP15506580A JPS5778941A JP S5778941 A JPS5778941 A JP S5778941A JP 15506580 A JP15506580 A JP 15506580A JP 15506580 A JP15506580 A JP 15506580A JP S5778941 A JPS5778941 A JP S5778941A
Authority
JP
Japan
Prior art keywords
thin film
negative electrodes
film
conductivity
induced
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15506580A
Other languages
Japanese (ja)
Other versions
JPS5910254B2 (en
Inventor
Takashi Hirao
Koshiro Mori
Masatoshi Kitagawa
Shinichiro Ishihara
Masaharu Ono
Seiichi Nagata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP15506580A priority Critical patent/JPS5910254B2/en
Publication of JPS5778941A publication Critical patent/JPS5778941A/en
Publication of JPS5910254B2 publication Critical patent/JPS5910254B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To form an amorphous thin film or polycrystalline (amorphous) thin film, having high photo-conductivity, by a method in which a positive electrode is provided between or the periphery of negative electrodes and glow discharge plasma is induced. CONSTITUTION:In a container 23 of quartz tube, etc., kept under reduced pressure, plural negative electrodes 24 and 28 are provided, and a positive electrode 27 is in provided rectangularly between or on the periphery of the negative electrodes 24 and 28. While applying a voltage, raw material gases are sent into the container 23 and glow discharge plasma is induced in magnetic field applied, whereupon a thin film is formed from the decomposition of the raw material gases on a base plate 29 placed on the negative electrode 28. The film film thus obtained has high quality as well as a high photo-conductivity and a low localized level density.
JP15506580A 1980-11-04 1980-11-04 Plasma position method Expired JPS5910254B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15506580A JPS5910254B2 (en) 1980-11-04 1980-11-04 Plasma position method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15506580A JPS5910254B2 (en) 1980-11-04 1980-11-04 Plasma position method

Publications (2)

Publication Number Publication Date
JPS5778941A true JPS5778941A (en) 1982-05-17
JPS5910254B2 JPS5910254B2 (en) 1984-03-07

Family

ID=15597894

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15506580A Expired JPS5910254B2 (en) 1980-11-04 1980-11-04 Plasma position method

Country Status (1)

Country Link
JP (1) JPS5910254B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5791734A (en) * 1980-11-26 1982-06-08 Fujitsu Ltd Plasma depositing method
JPS6328871A (en) * 1986-07-22 1988-02-06 Toshiba Corp Plasma cvd treating device
JPS6350477A (en) * 1986-08-19 1988-03-03 Fujitsu Ltd Formation of thin film device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5791734A (en) * 1980-11-26 1982-06-08 Fujitsu Ltd Plasma depositing method
JPS6329584B2 (en) * 1980-11-26 1988-06-14 Fujitsu Ltd
JPS6328871A (en) * 1986-07-22 1988-02-06 Toshiba Corp Plasma cvd treating device
JPS6350477A (en) * 1986-08-19 1988-03-03 Fujitsu Ltd Formation of thin film device

Also Published As

Publication number Publication date
JPS5910254B2 (en) 1984-03-07

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