JPS5667925A - Plasma etching method - Google Patents

Plasma etching method

Info

Publication number
JPS5667925A
JPS5667925A JP14376079A JP14376079A JPS5667925A JP S5667925 A JPS5667925 A JP S5667925A JP 14376079 A JP14376079 A JP 14376079A JP 14376079 A JP14376079 A JP 14376079A JP S5667925 A JPS5667925 A JP S5667925A
Authority
JP
Japan
Prior art keywords
etching
plasma
processed
film
equality
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14376079A
Other languages
Japanese (ja)
Inventor
Kazuo Hirata
Masakatsu Kimizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP14376079A priority Critical patent/JPS5667925A/en
Publication of JPS5667925A publication Critical patent/JPS5667925A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To improve reproducibility and equality of an etching volume by a method wherein a plasma polymerization material film is previously attached to an electrode surface facing to an etching material to be processed of a parallel and flat plate electrode type plasma etching system. CONSTITUTION:In order to form a plasma polymerization material film 8 on the surface of electrodes 2, 3 of a plasma etching system, a gas for formation of a plasma polymerization material in a state wherein an etching material to be processed is not placed, is introduced, and then, a high frequency voltage is applied to produce a plasma. After this film is formed, a material to be processed is introduced into the system to receive an etching. With this, reproducibility and equality of an etching volume is improved, thus, an etching smooth surface being obtained.
JP14376079A 1979-11-05 1979-11-05 Plasma etching method Pending JPS5667925A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14376079A JPS5667925A (en) 1979-11-05 1979-11-05 Plasma etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14376079A JPS5667925A (en) 1979-11-05 1979-11-05 Plasma etching method

Publications (1)

Publication Number Publication Date
JPS5667925A true JPS5667925A (en) 1981-06-08

Family

ID=15346378

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14376079A Pending JPS5667925A (en) 1979-11-05 1979-11-05 Plasma etching method

Country Status (1)

Country Link
JP (1) JPS5667925A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5779620A (en) * 1980-11-05 1982-05-18 Mitsubishi Electric Corp Plasma etching process
US6815365B2 (en) 1995-03-16 2004-11-09 Hitachi, Ltd. Plasma etching apparatus and plasma etching method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5779620A (en) * 1980-11-05 1982-05-18 Mitsubishi Electric Corp Plasma etching process
US6815365B2 (en) 1995-03-16 2004-11-09 Hitachi, Ltd. Plasma etching apparatus and plasma etching method
US7208422B2 (en) 1995-03-16 2007-04-24 Hitachi, Ltd. Plasma processing method
US7565879B2 (en) 1995-03-16 2009-07-28 Hitachi, Ltd Plasma processing apparatus

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