JPS53141182A - Plasma chemical vapor depositing device - Google Patents

Plasma chemical vapor depositing device

Info

Publication number
JPS53141182A
JPS53141182A JP5537177A JP5537177A JPS53141182A JP S53141182 A JPS53141182 A JP S53141182A JP 5537177 A JP5537177 A JP 5537177A JP 5537177 A JP5537177 A JP 5537177A JP S53141182 A JPS53141182 A JP S53141182A
Authority
JP
Japan
Prior art keywords
chemical vapor
plasma chemical
depositing device
vapor depositing
sample retaining
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5537177A
Other languages
Japanese (ja)
Inventor
Masanobu Hanazono
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5537177A priority Critical patent/JPS53141182A/en
Publication of JPS53141182A publication Critical patent/JPS53141182A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

PURPOSE:To provide the subject device wherein a sample retaining electrode encasing therein a heater is arranged at the high frequency power side, opposite electrodes and a vacuum vessel are grounded, a magnetic field is provided in the vicinity of the sample retaining electrode, and the plasma discharge between the electrodes is concentrated in the sample retaining electrode, thereby increasing the film depositing speed and improving adherence of the film.
JP5537177A 1977-05-16 1977-05-16 Plasma chemical vapor depositing device Pending JPS53141182A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5537177A JPS53141182A (en) 1977-05-16 1977-05-16 Plasma chemical vapor depositing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5537177A JPS53141182A (en) 1977-05-16 1977-05-16 Plasma chemical vapor depositing device

Publications (1)

Publication Number Publication Date
JPS53141182A true JPS53141182A (en) 1978-12-08

Family

ID=12996615

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5537177A Pending JPS53141182A (en) 1977-05-16 1977-05-16 Plasma chemical vapor depositing device

Country Status (1)

Country Link
JP (1) JPS53141182A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5675565A (en) * 1979-11-20 1981-06-22 Sumitomo Electric Ind Ltd Manufacturing method of thin film
JPS58117868A (en) * 1981-12-28 1983-07-13 Toshiba Corp Film forming device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5675565A (en) * 1979-11-20 1981-06-22 Sumitomo Electric Ind Ltd Manufacturing method of thin film
JPS58117868A (en) * 1981-12-28 1983-07-13 Toshiba Corp Film forming device

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