JPS5676242A - Treating apparatus using gas plasma reaction - Google Patents
Treating apparatus using gas plasma reactionInfo
- Publication number
- JPS5676242A JPS5676242A JP15260179A JP15260179A JPS5676242A JP S5676242 A JPS5676242 A JP S5676242A JP 15260179 A JP15260179 A JP 15260179A JP 15260179 A JP15260179 A JP 15260179A JP S5676242 A JPS5676242 A JP S5676242A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- parallel
- electrode
- etching
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Physical Or Chemical Processes And Apparatus (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE: To enable to perform highly uniform an precise high speed etching , by arranging between two parallel flat electrodes a porous electrode plate in parallel thereto while said porous electrode is connected with one of said flat electrodes and grounded.
CONSTITUTION: Within a sealed container comprising a bell-shaped lid 1 and a bottom 2 are arranged the two upper and lower electrodes 3, 4 in parallel with each other, and the porous electrode plate 5 is located in a space between the electrodes 3, 4 so that the plasma reaction treatment apparatus may be formed. When plasma etching is carried out using said apparatus, plasma discharge occurs between the upper electrodes and the middle electrode 5, and the generated active seeds pass through the pores in the middle electrode 5 and reach the object placed on the lower electrode 4. As the plasma discharge section and the etching treatment section by the generated active seeds are separated by the middle electrode, the active seeds can act on the object to be treated in a uniform an highly concentrated state.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15260179A JPS5676242A (en) | 1979-11-26 | 1979-11-26 | Treating apparatus using gas plasma reaction |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15260179A JPS5676242A (en) | 1979-11-26 | 1979-11-26 | Treating apparatus using gas plasma reaction |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5676242A true JPS5676242A (en) | 1981-06-23 |
JPS6210687B2 JPS6210687B2 (en) | 1987-03-07 |
Family
ID=15543973
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15260179A Granted JPS5676242A (en) | 1979-11-26 | 1979-11-26 | Treating apparatus using gas plasma reaction |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5676242A (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5685827A (en) * | 1979-12-14 | 1981-07-13 | Fujitsu Ltd | Plasma etching treating method and treatment device |
JPS5858147A (en) * | 1981-09-30 | 1983-04-06 | Shimadzu Corp | Plasma treating apparatus |
JPS59139627A (en) * | 1983-01-31 | 1984-08-10 | Hitachi Ltd | Dry etching device |
JPS59189934A (en) * | 1983-04-13 | 1984-10-27 | Nippon Telegr & Teleph Corp <Ntt> | Method and apparatus for forming amorphous membrane |
JPS61267325A (en) * | 1985-05-22 | 1986-11-26 | Tokyo Denshi Kagaku Kk | Removal of organic film |
US5209803A (en) * | 1988-08-30 | 1993-05-11 | Matrix Integrated Systems, Inc. | Parallel plate reactor and method of use |
JPH08167596A (en) * | 1994-12-09 | 1996-06-25 | Sony Corp | Plasma treatment device, plasma treatment method, and manufacture of semiconductor device |
US7556741B2 (en) | 2002-08-28 | 2009-07-07 | Kyocera Corporation | Method for producing a solar cell |
US7556740B2 (en) | 2002-08-27 | 2009-07-07 | Kyocera Corporation | Method for producing a solar cell |
WO2012011171A1 (en) * | 2010-07-21 | 2012-01-26 | トヨタ自動車株式会社 | Etching device |
CN104071747A (en) * | 2014-07-14 | 2014-10-01 | 大连理工大学 | Method for preparing synthesis gas through methane reforming with plasma |
JP2015179851A (en) * | 2011-03-14 | 2015-10-08 | プラズマ − サーム、エルエルシー | Method and apparatus for plasma dicing semiconductor wafer |
-
1979
- 1979-11-26 JP JP15260179A patent/JPS5676242A/en active Granted
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5685827A (en) * | 1979-12-14 | 1981-07-13 | Fujitsu Ltd | Plasma etching treating method and treatment device |
JPS5852325B2 (en) * | 1979-12-14 | 1983-11-22 | 富士通株式会社 | Plasma etching processing method and processing equipment |
JPS5858147A (en) * | 1981-09-30 | 1983-04-06 | Shimadzu Corp | Plasma treating apparatus |
JPS59139627A (en) * | 1983-01-31 | 1984-08-10 | Hitachi Ltd | Dry etching device |
JPS59189934A (en) * | 1983-04-13 | 1984-10-27 | Nippon Telegr & Teleph Corp <Ntt> | Method and apparatus for forming amorphous membrane |
JPS61267325A (en) * | 1985-05-22 | 1986-11-26 | Tokyo Denshi Kagaku Kk | Removal of organic film |
US5209803A (en) * | 1988-08-30 | 1993-05-11 | Matrix Integrated Systems, Inc. | Parallel plate reactor and method of use |
JPH08167596A (en) * | 1994-12-09 | 1996-06-25 | Sony Corp | Plasma treatment device, plasma treatment method, and manufacture of semiconductor device |
US7556740B2 (en) | 2002-08-27 | 2009-07-07 | Kyocera Corporation | Method for producing a solar cell |
US7556741B2 (en) | 2002-08-28 | 2009-07-07 | Kyocera Corporation | Method for producing a solar cell |
WO2012011171A1 (en) * | 2010-07-21 | 2012-01-26 | トヨタ自動車株式会社 | Etching device |
JP5382125B2 (en) * | 2010-07-21 | 2014-01-08 | トヨタ自動車株式会社 | Etching device |
JP2015179851A (en) * | 2011-03-14 | 2015-10-08 | プラズマ − サーム、エルエルシー | Method and apparatus for plasma dicing semiconductor wafer |
CN104071747A (en) * | 2014-07-14 | 2014-10-01 | 大连理工大学 | Method for preparing synthesis gas through methane reforming with plasma |
Also Published As
Publication number | Publication date |
---|---|
JPS6210687B2 (en) | 1987-03-07 |
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