JPS5676242A - Treating apparatus using gas plasma reaction - Google Patents

Treating apparatus using gas plasma reaction

Info

Publication number
JPS5676242A
JPS5676242A JP15260179A JP15260179A JPS5676242A JP S5676242 A JPS5676242 A JP S5676242A JP 15260179 A JP15260179 A JP 15260179A JP 15260179 A JP15260179 A JP 15260179A JP S5676242 A JPS5676242 A JP S5676242A
Authority
JP
Japan
Prior art keywords
electrodes
parallel
electrode
etching
plasma
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP15260179A
Other languages
Japanese (ja)
Other versions
JPS6210687B2 (en
Inventor
Isamu Hijikata
Akira Uehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP15260179A priority Critical patent/JPS5676242A/en
Publication of JPS5676242A publication Critical patent/JPS5676242A/en
Publication of JPS6210687B2 publication Critical patent/JPS6210687B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Or Chemical Processes And Apparatus (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To enable to perform highly uniform an precise high speed etching , by arranging between two parallel flat electrodes a porous electrode plate in parallel thereto while said porous electrode is connected with one of said flat electrodes and grounded.
CONSTITUTION: Within a sealed container comprising a bell-shaped lid 1 and a bottom 2 are arranged the two upper and lower electrodes 3, 4 in parallel with each other, and the porous electrode plate 5 is located in a space between the electrodes 3, 4 so that the plasma reaction treatment apparatus may be formed. When plasma etching is carried out using said apparatus, plasma discharge occurs between the upper electrodes and the middle electrode 5, and the generated active seeds pass through the pores in the middle electrode 5 and reach the object placed on the lower electrode 4. As the plasma discharge section and the etching treatment section by the generated active seeds are separated by the middle electrode, the active seeds can act on the object to be treated in a uniform an highly concentrated state.
COPYRIGHT: (C)1981,JPO&Japio
JP15260179A 1979-11-26 1979-11-26 Treating apparatus using gas plasma reaction Granted JPS5676242A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15260179A JPS5676242A (en) 1979-11-26 1979-11-26 Treating apparatus using gas plasma reaction

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15260179A JPS5676242A (en) 1979-11-26 1979-11-26 Treating apparatus using gas plasma reaction

Publications (2)

Publication Number Publication Date
JPS5676242A true JPS5676242A (en) 1981-06-23
JPS6210687B2 JPS6210687B2 (en) 1987-03-07

Family

ID=15543973

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15260179A Granted JPS5676242A (en) 1979-11-26 1979-11-26 Treating apparatus using gas plasma reaction

Country Status (1)

Country Link
JP (1) JPS5676242A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5685827A (en) * 1979-12-14 1981-07-13 Fujitsu Ltd Plasma etching treating method and treatment device
JPS5858147A (en) * 1981-09-30 1983-04-06 Shimadzu Corp Plasma treating apparatus
JPS59139627A (en) * 1983-01-31 1984-08-10 Hitachi Ltd Dry etching device
JPS59189934A (en) * 1983-04-13 1984-10-27 Nippon Telegr & Teleph Corp <Ntt> Method and apparatus for forming amorphous membrane
JPS61267325A (en) * 1985-05-22 1986-11-26 Tokyo Denshi Kagaku Kk Removal of organic film
US5209803A (en) * 1988-08-30 1993-05-11 Matrix Integrated Systems, Inc. Parallel plate reactor and method of use
JPH08167596A (en) * 1994-12-09 1996-06-25 Sony Corp Plasma treatment device, plasma treatment method, and manufacture of semiconductor device
US7556741B2 (en) 2002-08-28 2009-07-07 Kyocera Corporation Method for producing a solar cell
US7556740B2 (en) 2002-08-27 2009-07-07 Kyocera Corporation Method for producing a solar cell
WO2012011171A1 (en) * 2010-07-21 2012-01-26 トヨタ自動車株式会社 Etching device
CN104071747A (en) * 2014-07-14 2014-10-01 大连理工大学 Method for preparing synthesis gas through methane reforming with plasma
JP2015179851A (en) * 2011-03-14 2015-10-08 プラズマ − サーム、エルエルシー Method and apparatus for plasma dicing semiconductor wafer

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5685827A (en) * 1979-12-14 1981-07-13 Fujitsu Ltd Plasma etching treating method and treatment device
JPS5852325B2 (en) * 1979-12-14 1983-11-22 富士通株式会社 Plasma etching processing method and processing equipment
JPS5858147A (en) * 1981-09-30 1983-04-06 Shimadzu Corp Plasma treating apparatus
JPS59139627A (en) * 1983-01-31 1984-08-10 Hitachi Ltd Dry etching device
JPS59189934A (en) * 1983-04-13 1984-10-27 Nippon Telegr & Teleph Corp <Ntt> Method and apparatus for forming amorphous membrane
JPS61267325A (en) * 1985-05-22 1986-11-26 Tokyo Denshi Kagaku Kk Removal of organic film
US5209803A (en) * 1988-08-30 1993-05-11 Matrix Integrated Systems, Inc. Parallel plate reactor and method of use
JPH08167596A (en) * 1994-12-09 1996-06-25 Sony Corp Plasma treatment device, plasma treatment method, and manufacture of semiconductor device
US7556740B2 (en) 2002-08-27 2009-07-07 Kyocera Corporation Method for producing a solar cell
US7556741B2 (en) 2002-08-28 2009-07-07 Kyocera Corporation Method for producing a solar cell
WO2012011171A1 (en) * 2010-07-21 2012-01-26 トヨタ自動車株式会社 Etching device
JP5382125B2 (en) * 2010-07-21 2014-01-08 トヨタ自動車株式会社 Etching device
JP2015179851A (en) * 2011-03-14 2015-10-08 プラズマ − サーム、エルエルシー Method and apparatus for plasma dicing semiconductor wafer
CN104071747A (en) * 2014-07-14 2014-10-01 大连理工大学 Method for preparing synthesis gas through methane reforming with plasma

Also Published As

Publication number Publication date
JPS6210687B2 (en) 1987-03-07

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