JPS55102239A - Apparatus for plasma-gas-phase growth - Google Patents

Apparatus for plasma-gas-phase growth

Info

Publication number
JPS55102239A
JPS55102239A JP1025379A JP1025379A JPS55102239A JP S55102239 A JPS55102239 A JP S55102239A JP 1025379 A JP1025379 A JP 1025379A JP 1025379 A JP1025379 A JP 1025379A JP S55102239 A JPS55102239 A JP S55102239A
Authority
JP
Japan
Prior art keywords
products
chamber
plasma
reacted
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1025379A
Other languages
Japanese (ja)
Other versions
JPS592374B2 (en
Inventor
Tadao Konishi
Morio Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP1025379A priority Critical patent/JPS592374B2/en
Publication of JPS55102239A publication Critical patent/JPS55102239A/en
Publication of JPS592374B2 publication Critical patent/JPS592374B2/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To prevent attachment of a non-reacted gas and reacted by-products to the unnecessary portions due to the disturbance of plasma distribution around the peripheral portion of electrodes; in the case when plasma is generated between the electrodes comprising parallel plates, and a film is grown on a substrate. CONSTITUTION:A basic structure is the same as conventional chambers. When a chamber 3 is hermetically sealed, the back surface of a top-side high-frequency electrode 5 is contacted with a ceiling 3a of said chamber. Qaurtz partitioning walls 15a-15d are provided around the electrode 5 so that the walls can be installed and removed freely. By these partitioning walls are surrounded the peripheries of the top and bottom high-frequency electrodes and the plasma-generating region between the electrode so as to form one body. In this constitution, reacted by-products do not attach to the back of the top electrode 5 and the ceiling 3a of the chamber, and the cleaning after the gaseous-phase growth is simple. The partitioning walls 15a- 15d specify the exhausting path of the reacted by-products and the like, prevent the attachment of the by-products and the like to the inside walls of the chamber, and introduce them to an exhausting hole. Therefore, cleaning is achieved by only removing the partitioning walls and eliminating the attached materials.
JP1025379A 1979-01-30 1979-01-30 Plasma vapor phase growth equipment Expired JPS592374B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1025379A JPS592374B2 (en) 1979-01-30 1979-01-30 Plasma vapor phase growth equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1025379A JPS592374B2 (en) 1979-01-30 1979-01-30 Plasma vapor phase growth equipment

Publications (2)

Publication Number Publication Date
JPS55102239A true JPS55102239A (en) 1980-08-05
JPS592374B2 JPS592374B2 (en) 1984-01-18

Family

ID=11745145

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1025379A Expired JPS592374B2 (en) 1979-01-30 1979-01-30 Plasma vapor phase growth equipment

Country Status (1)

Country Link
JP (1) JPS592374B2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57167630A (en) * 1981-03-13 1982-10-15 Fujitsu Ltd Plasma vapor-phase growing device
JPS59104118A (en) * 1982-12-06 1984-06-15 Agency Of Ind Science & Technol Plasma deposition device
JPS60224215A (en) * 1984-04-20 1985-11-08 Semiconductor Energy Lab Co Ltd Plasma vapor-phase reactor
JPS60224216A (en) * 1984-04-20 1985-11-08 Semiconductor Energy Lab Co Ltd Plasma vapor-phase reactor
JPS60179033U (en) * 1984-05-08 1985-11-28 株式会社富士電機総合研究所 discharge electrode
JPH01309975A (en) * 1988-06-08 1989-12-14 Matsushita Electric Ind Co Ltd Plasma cvd device
JPH0245916A (en) * 1988-08-05 1990-02-15 Nec Kyushu Ltd Vapor phase growth device
JPH0525647A (en) * 1991-02-12 1993-02-02 Fujitsu Ltd Plasma vapor growth method
EP0658918A2 (en) * 1993-12-14 1995-06-21 Nissin Electric Company, Limited Plasma processing apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01133970U (en) * 1988-03-07 1989-09-12

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57167630A (en) * 1981-03-13 1982-10-15 Fujitsu Ltd Plasma vapor-phase growing device
JPS59104118A (en) * 1982-12-06 1984-06-15 Agency Of Ind Science & Technol Plasma deposition device
JPH0514415B2 (en) * 1982-12-06 1993-02-25 Kogyo Gijutsuin
JPS60224215A (en) * 1984-04-20 1985-11-08 Semiconductor Energy Lab Co Ltd Plasma vapor-phase reactor
JPS60224216A (en) * 1984-04-20 1985-11-08 Semiconductor Energy Lab Co Ltd Plasma vapor-phase reactor
JPH0236058B2 (en) * 1984-04-20 1990-08-15 Handotai Energy Kenkyusho
JPS60179033U (en) * 1984-05-08 1985-11-28 株式会社富士電機総合研究所 discharge electrode
JPH01309975A (en) * 1988-06-08 1989-12-14 Matsushita Electric Ind Co Ltd Plasma cvd device
JPH0245916A (en) * 1988-08-05 1990-02-15 Nec Kyushu Ltd Vapor phase growth device
JPH0525647A (en) * 1991-02-12 1993-02-02 Fujitsu Ltd Plasma vapor growth method
EP0658918A2 (en) * 1993-12-14 1995-06-21 Nissin Electric Company, Limited Plasma processing apparatus
EP0658918A3 (en) * 1993-12-14 1995-07-05 Nissin Electric Company, Limited Plasma processing apparatus

Also Published As

Publication number Publication date
JPS592374B2 (en) 1984-01-18

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