JPS55102238A - Apparatus for plasma-gas-phase growth - Google Patents
Apparatus for plasma-gas-phase growthInfo
- Publication number
- JPS55102238A JPS55102238A JP1025279A JP1025279A JPS55102238A JP S55102238 A JPS55102238 A JP S55102238A JP 1025279 A JP1025279 A JP 1025279A JP 1025279 A JP1025279 A JP 1025279A JP S55102238 A JPS55102238 A JP S55102238A
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- walls
- partitioning walls
- reacted
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
Abstract
PURPOSE:To prevent attachment of residual materials on the unnecessary portions in a chamber , by providing partititoning walls between the peripheries of electrodes and a chamber, and introducing the reacted by-products and non-reacted gas to an exhausting hole from the protion between the peripheries of the electrodes and the partitioning walls. CONSTITUTION:The basic structure is approximately the same as conventional plasma-gas-phase growing apparatuese. Now, quarts partitioning walls 15a-15d are provided around a top rectangualr high frequency electrode 5 so that the walls can be removed and installed freely. By these partitioning walls, are surrounded the peripheries of the top and bottom high-frequency electrodes and the plasma-generating region between said electrodes so as to form one body. In this constitution, the reacted by-products and the non-reacted gas are introduced to an exhausting hole 12 through the portion between the periphery of the bottom electrode and the partitioning walls 15a-15d, and are not attached to an inner wall 3a, the back surface of the top electrode 5, and the like. The removal of the residual material can be made by removing the partitioning walls 15a-15d and chemically treating them. This work is very simple, and the quality of the film which is formed by the gaseous-phase growth is improved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1025279A JPS5846056B2 (en) | 1979-01-30 | 1979-01-30 | Plasma vapor phase growth equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1025279A JPS5846056B2 (en) | 1979-01-30 | 1979-01-30 | Plasma vapor phase growth equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55102238A true JPS55102238A (en) | 1980-08-05 |
| JPS5846056B2 JPS5846056B2 (en) | 1983-10-14 |
Family
ID=11745116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1025279A Expired JPS5846056B2 (en) | 1979-01-30 | 1979-01-30 | Plasma vapor phase growth equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5846056B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08191066A (en) * | 1995-10-09 | 1996-07-23 | Canon Inc | Deposition film forming method |
| KR100925568B1 (en) | 2007-07-13 | 2009-11-05 | (주)러셀 | A chamber of chemical vapor deposition |
-
1979
- 1979-01-30 JP JP1025279A patent/JPS5846056B2/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08191066A (en) * | 1995-10-09 | 1996-07-23 | Canon Inc | Deposition film forming method |
| KR100925568B1 (en) | 2007-07-13 | 2009-11-05 | (주)러셀 | A chamber of chemical vapor deposition |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5846056B2 (en) | 1983-10-14 |
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