KR100925568B1 - A chamber of chemical vapor deposition - Google Patents

A chamber of chemical vapor deposition Download PDF

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KR100925568B1
KR100925568B1 KR1020070070632A KR20070070632A KR100925568B1 KR 100925568 B1 KR100925568 B1 KR 100925568B1 KR 1020070070632 A KR1020070070632 A KR 1020070070632A KR 20070070632 A KR20070070632 A KR 20070070632A KR 100925568 B1 KR100925568 B1 KR 100925568B1
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chamber
gas
pumping
bottom plate
hole
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KR20090007040A (en
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이상천
이강열
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(주)러셀
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]

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  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 발명에 따른 화학 기상 증착장치의 반응챔버는 반응챔버를 챔버본체 및 챔버밑판으로 분할 형성하여 챔버밑판을 분해/조립할 수 있도록 함으로써 반응기의 세정작업을 용이하게 실시할 수 있도록 하여 장치의 생산성을 향상시키며, 챔버밑판의 상면에는 배출가스유입실을 형성하고 배출가스유입실의 상부에는 다양한 크기의 배출공을 장착할수 있는 펌핑링판을 안치하여 반응가스가 균일한 상태를 유지할 수 있도록 하여 형성된 박막의 두께 균일도를 향상시키며, 챔버밑판의 배출가스유입실에는 가스배출공을 하측으로 형성하여 부산물을 용이하게 배출시킬 수 있도록 함으로써, 이물의 발생을 개선시킬 수 있다.

Figure R1020070070632

화학기상 증착 반응챔버. 반응챔버. 챔버본체. 챔버밑판.

The reaction chamber of the chemical vapor deposition apparatus according to the present invention divides the reaction chamber into a chamber body and a chamber bottom plate so that the chamber bottom plate can be disassembled / assembled to facilitate the cleaning operation of the reactor, thereby improving the productivity of the apparatus. The thickness of the thin film formed by forming a discharge gas inlet chamber on the upper surface of the chamber bottom plate and placing a pumping ring plate that can be equipped with discharge holes of various sizes on the upper part of the exhaust gas inlet chamber to maintain a uniform state of the reaction gas. The uniformity is improved, and the exhaust gas inlet chamber of the lower chamber of the chamber is formed with a gas discharge hole downward, so that by-products can be easily discharged, thereby generating foreign substances.

Figure R1020070070632

Chemical Vapor Deposition Reaction Chamber. Reaction chamber. Chamber body. Chamber bottom plate.

Description

화학 기상 증착장치의 반응챔버{A CHAMBER OF CHEMICAL VAPOR DEPOSITION}Reaction chamber of chemical vapor deposition apparatus {A CHAMBER OF CHEMICAL VAPOR DEPOSITION}

본 발명은 반도체웨이퍼 또는 패널용 투명유리와 같은 기판상(표면)에 박막을 증착시키기 위한 화학 기상 증착장치의 반응챔버에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reaction chamber of a chemical vapor deposition apparatus for depositing a thin film on a substrate (surface) such as a transparent glass for a semiconductor wafer or a panel.

반도체제조공정에서 박막증착장치가 요구되는 특성은 박막의 균일도, 이물의 저감, 높은 생산성을 들 수 있다.The characteristics required for the thin film deposition apparatus in the semiconductor manufacturing process include the uniformity of the thin film, the reduction of foreign matters, and the high productivity.

첫째로 박막의 균일도는 가스의 분포의 균일도, 웨이퍼를 히팅하는 히터의 온도 균일도 그리고 플라즈마를 사용하는 박막증착장치의 경우 플라즈마의 균일도에 따라 결정된다.First, the uniformity of the thin film is determined by the uniformity of the gas distribution, the temperature uniformity of the heater heating the wafer, and the plasma uniformity in the case of the thin film deposition apparatus using the plasma.

둘째로 이물의 저감은 박막을 형성시키는 공정조건 - 예를 들면 공정압력, 온도, 가스량, 플라즈마파워, 상세 공정순서 - 과 박막의 형성시 미 반응가스 및 반응후 생성된 부산물의 배출능력에 의해 좌우된다.Secondly, the reduction of foreign matters depends on the process conditions for forming the thin film-for example, process pressure, temperature, gas volume, plasma power, detailed process sequence-and the ability to discharge unreacted gases and by-products generated after the reaction when the thin film is formed. do.

셋째로 높은 생산성은 기본적으로 공정시간과 장치의 성능 - 로봇의 스피드 등 - 에 의해 영향을 받으며 장치의 가동률이 얼마나 높으냐에 의해 결정이 되고, 장치의 가동률은 장치의 고장발생빈도 및 장치의 정기적 세정 주기 및 세정시간에 의해 결정된다.Thirdly, high productivity is basically influenced by the process time and the performance of the device-the speed of the robot, etc., and it is determined by how high the operation rate of the device is. It is determined by the cycle and cleaning time.

도 1은 종래의 화학기상 증착 반응챔버(1)의 구조이다.1 is a structure of a conventional chemical vapor deposition reaction chamber 1.

챔버본체(11)의 상측에 챔버커버(15)가 장착되는 반응챔버(3)의 상측에는 가스공급부(2)와 연결되는 가스박스커버(4)가 설치되어 있고, 반응챔버(3)의 내부에 형성된 프로세스공간(19)에는 기판지지히팅판(8)이 구비되어 히터리프트어셈블리(구체적으로 도시하지 아니함)의해 작동되는 히터지지대(7)에 의해 받쳐(지지 되어) 있다.On the upper side of the reaction chamber (3) in which the chamber cover (15) is mounted on the upper side of the chamber body (11), a gas box cover (4) connected to the gas supply unit (2) is provided, and the inside of the reaction chamber (3) The substrate support heating plate 8 is provided in the process space 19 formed therein, and is supported (supported) by the heater support 7 operated by a heater lift assembly (not specifically shown).

반응챔버(3)는 가스공급부(2)에서 공급되는 가스를 분사시키는 페이스플레이트(10)가 프로세스공간(19)의 상측에 설치되고, 프로세스공간(19)의 내부에는 안치되는 웨이퍼(W)를 히팅하는 기판지지히팅판(8)이 설치되어 있으며, 챔버본체(11)의 내주면 상단부에는 배출가스측면펌핑홀(12)이 형성되고 배출가스측면펌핑홀(12)에는 가스측면배출공(13)이 형성되어 배기가스를 측면에서 배출시키도록 되어 있다.The reaction chamber 3 is provided with a face plate 10 for injecting the gas supplied from the gas supply part 2 on the upper side of the process space 19, and the wafer W placed inside the process space 19. A heating substrate supporting heating plate 8 is provided, and an exhaust gas side pumping hole 12 is formed at an upper end of the inner circumferential surface of the chamber body 11, and a gas side exhaust hole 13 is formed in the exhaust gas side pumping hole 12. This is formed to discharge the exhaust gas from the side.

그러나, 상기와 같이 형성된 종래의 화학기상 증착 반응챔버(1)는 다음과 같은 문제점이 지적된다. However, the conventional chemical vapor deposition reaction chamber 1 formed as described above is pointed out the following problems.

첫째 배기가스의 배출이 반응챔버(3)의 측벽에 형성된 배출가스측면펌핑홀(12)을 통하여 배출이 되므로 배기가스의 분포가 균일하지 못하고 한쪽으로 치우치게 되는 문제점이 발생하며, 이는 반응가스의 균일도에 영향을 미쳐 결과적으로 형성된 박막의 균일도에 영향을 미치게 된다.First, since the exhaust gas is discharged through the exhaust gas side pumping hole 12 formed in the side wall of the reaction chamber 3, the distribution of the exhaust gas is not uniform and is biased to one side, which causes uniformity of the reaction gas. This affects the uniformity of the resulting thin film.

둘째로 반응챔버(3)의 본체가 일체형으로 되어 있어 세정작업시 반응챔버(3)의 내부에 장착되어 있는 모든 부품들은 탈착하여야 하는 번거러움이 있으며, 이는 세정시간의 연장을 유발할 뿐만 아니라 결과적으로 장치의 가동률을 저하시키는 문제점이 있다.Secondly, since the main body of the reaction chamber 3 is integrated, all parts mounted inside the reaction chamber 3 during the cleaning operation have to be detached, which not only prolongs the cleaning time but also consequently the device. There is a problem of lowering the operation rate.

발명은 반도체공정에서 박막증착장치가 갖추어야 할 중요한 세가지의 특성을 개선하기 위한 화학기상 증착장치의 반응챔버의 구조에 관한 것이다.  The present invention relates to a structure of a reaction chamber of a chemical vapor deposition apparatus for improving three important characteristics that a thin film deposition apparatus should have in a semiconductor process.

이를 상세히 설명하면, 첫째로 박막의 두께 균일도의 개선을 위해 반응가스의 분포의 균일도 개선에 관한 것이다. 반응가스의 분포의 균일도는 가스분사의 균일도와 가스배기의 균일도에 의해 결정되어 진다. 본 발명은 가스배기의 균일도에 관한 것으로써 배기가스가 배출되어 지는 펌핑링에 크기가 조정이 가능한 가스배출공을 장착함으로써 균일한 배기가스의 배출이 가능하게 하는 것이다.In detail, first, the present invention relates to improving the uniformity of the distribution of the reaction gas in order to improve the thickness uniformity of the thin film. The uniformity of the distribution of the reaction gas is determined by the uniformity of the gas injection and the uniformity of the gas exhaust. The present invention relates to the uniformity of the gas exhaust, and to uniformly discharge the exhaust gas by attaching a gas exhaust hole whose size can be adjusted to the pumping ring through which the exhaust gas is discharged.

둘째는 이물의 저감에 관한 것으로 배기가스 배출을 위한 펌핑링을 반응챔버의 하단에 위치하게 함으로써 배기가스가 축적되지 않고 용이하고 신속히 배출되게 구성되어 있다.The second is to reduce foreign matters, and the pumping ring for exhaust gas discharge is located at the bottom of the reaction chamber so that the exhaust gas is not accumulated and is easily and quickly discharged.

셋째로 생산성향상에 관한 것으로써 반응챔버의 본체와 바닥을 분리가능하게 구성함으로써 바닥부분의 세정작업이 필요시 본체에 장착되어 있는 각종 부품들을 탈착하지 않고 바닥만 분리하여 세정이 가능하게 함으로써 세정시간의 단축효과를 가짐으로써 결과적으로 장치의 가동율을 향상시켜 생산성을 향상시킬 수 있다.Thirdly, the improvement of productivity. The main body and the bottom of the reaction chamber are separable so that the cleaning time of the bottom part can be cleaned by separating the bottom without removing various parts attached to the main body. As a result, the productivity of the device can be improved by increasing the operation rate of the device.

화학 기상 증착장치의 반응챔버에 있어서;A reaction chamber of a chemical vapor deposition apparatus;

반응챔버(3)는, 상측에 챔버커버(15)가 결합되는 챔버본체(11)의 하측에 분할 형성된 챔버밑판(16)을 조립시킨 것과;The reaction chamber 3 includes an assembly of a chamber bottom plate 16 formed on a lower side of the chamber body 11 to which the chamber cover 15 is coupled to the upper side;

챔버밑판(16)은, 중앙에 유통공(17)을 상하 개방되게 뚫어 주고, 유통공(17)의 외측 상면에는 배출가스하단펌핑홀(20)을 요홈으로 형성하며, 배출가스하단펌핑홀(20)에는 가스하단배출공(21)을 챔버밑판(16)의 밑면으로 개방되게 뚫어주며, 가스하단배출공(21)의 단부에 펌핑홀더(22)를 장착한 것과;The chamber bottom plate 16 drills the distribution hole 17 at the center so as to be opened up and down, and forms a discharge gas lower pumping hole 20 as a recess on the outer upper surface of the distribution hole 17, and discharge gas lower pumping hole ( 20, the lower gas discharge hole 21 is opened to the bottom of the chamber bottom plate 16, and the pumping holder 22 is mounted at the end of the lower gas discharge hole 21;

챔버밑판(16)에 형성된 배출가스하단펌핑홀(20)의 상단에는 가스배출공(24)이 뚫어진 펌핑링판(23)을 장착시킨 것과;A pumping ring plate 23 having a gas discharge hole 24 perforated at the upper end of the exhaust gas lower pumping hole 20 formed in the chamber bottom plate 16;

펌핑링판(23)에 형성된 가스배출공(24)에는 펌핑링캡(26)을 장착한 것;이 포함되는 것을 특징으로 하는 화학 기상 증착장치의 반응챔버(1-1)에 의해 달성된다.The gas discharge hole 24 formed in the pumping ring plate 23 is equipped with a pumping ring cap 26; is achieved by the reaction chamber (1-1) of the chemical vapor deposition apparatus characterized in that it comprises a.

본 발명에 따른 화학 기상 증착장치의 반응챔버는 반응챔버를 챔버본체 및 챔버밑판으로 분할 형성하여 챔버밑판을 분해/조립할 수 있도록 함으로써 반응기의 세정작업을 용이하게 실시할 수 있도록 하여 장치의 생산성을 향상시키며, 챔버밑판의 상면에는 배출가스유입실을 형성하고 배출가스유입실의 상부에는 다양한 크기의 배출공을 장착할수 있는 펌핑링판을 안치하여 반응가스가 균일한 상태를 유지할 수 있도록 하여 형성된 박막의 두께 균일도를 향상시키며, 챔버밑판의 배출가스유 입실에는 가스배출공을 하측으로 형성하여 부산물을 용이하게 배출시킬 수 있도록 함으로써, 이물의 발생을 개선시킬 수 있다. The reaction chamber of the chemical vapor deposition apparatus according to the present invention divides the reaction chamber into a chamber body and a chamber bottom plate so that the chamber bottom plate can be disassembled / assembled to facilitate the cleaning operation of the reactor, thereby improving the productivity of the apparatus. The thickness of the thin film formed by forming a discharge gas inlet chamber on the upper surface of the chamber bottom plate and placing a pumping ring plate that can be equipped with discharge holes of various sizes on the upper part of the exhaust gas inlet chamber to maintain a uniform state of the reaction gas. The uniformity is improved, and the exhaust gas inlet chamber of the lower chamber of the chamber is formed with a gas discharge hole downward, so that by-products can be easily discharged, thereby generating foreign substances.

도 2는 본 발명에 의해 구성된 화학기상 증착 반응챔버(1-1)의 구조이다.2 is a structure of a chemical vapor deposition reaction chamber 1-1 constructed in accordance with the present invention.

화학기상 증착 반응챔버(1-1)는 상하로 개방되게 형성되고 측면에 개구부(14)가 형성된 챔버본체(11)의 상측에는 챔버커버(15)를 장착하였고, 챔버본체(11)의 하측에는 별도로 성형된 챔버밑판(16)을 볼트스크루(18)에 의해 착탈할 수 있도록 장착하였으며, 상기와 같이 챔버커버(15)와 챔버본체(11) 및 챔버밑판(16)을 조립하여 형성된 반응챔버(3)의 내부에는 프로세스공간(19)이 형성되도록 하였다.The chemical vapor deposition reaction chamber 1-1 is formed to be opened up and down, and the chamber cover 15 is mounted on the upper side of the chamber body 11 having the opening 14 formed on the side thereof, and below the chamber body 11. The separately formed chamber bottom plate 16 was mounted to be detachable by a bolt screw 18, and the reaction chamber formed by assembling the chamber cover 15, the chamber body 11 and the chamber bottom plate 16 as described above. The process space 19 is formed inside the 3).

챔버밑판(16)은 중앙에 기판지지히팅판(8)이 상하동작을 하는 공간인 유통공(17)을 상하로 개방되게 뚫어 주었고, 유통공(17)의 외측에서 상면에는 배출가스의 배출을 위한 배출가스하단펌핑홀(20)을 도넛형상의 홈으로 형성하였으며, 배출가스하단펌핑홀(20)의 상단에는 가스배출공(24)이 형성된 펌핑링판(23)을 장전(결합)시켰다.The chamber bottom plate 16 drills a distribution hole 17, which is a space in which the substrate supporting heating plate 8 moves up and down, in the center so as to open up and down, and discharges exhaust gas on the upper surface from the outside of the distribution hole 17. A discharge gas lower pumping hole 20 was formed as a donut-shaped groove, and a pumping ring plate 23 having a gas discharge hole 24 was loaded (combined) at an upper end of the exhaust gas lower pumping hole 20.

또한, 펌핑링판(23)에 형성된 복수 개의 가스배출공(24)에는 펌핑링캡(26)을 각각 장전시켜 주었고, 펌핑링판(23)의 내단 가장자리에는 복수 개의 장착공(25)을 뚫어 장전핀으로 장착하였으며, 펌핑링판(23)을 챔버밑판(16)에 형성된 배출가스하단펌핑홀(20)의 상단에 결합시켰다.In addition, a plurality of gas discharge holes 24 formed in the pumping ring plate 23 were loaded with a pumping ring cap 26, respectively, and a plurality of mounting holes 25 were drilled at the inner edge of the pumping ring plate 23 to the loading pins. The pumping ring plate 23 was attached to the upper end of the exhaust gas lower pumping hole 20 formed in the chamber bottom plate 16.

챔버밑판(16)에는 가스하단배출공(21)을 하측으로 개방되게 형성하였고, 가스하단배출공(21)의 하단에는 펌핑홀더(22)를 장착하였다.The chamber bottom plate 16 was formed such that the gas lower discharge hole 21 was opened downward, and a pumping holder 22 was mounted at the lower end of the gas lower discharge hole 21.

반응챔버(3)를 형성하는 챔버커버(15)의 상면에는 가스박스커버(4)를 장착하고, 챔버커버(15)의 하측에는 페이스플레이트(10)를 장착하여 프로세스공간(19)으로 유입되게 하여 가스공급부(2)에서 공급되는 반응가스를 균일한 밀도로 분사시킬 수 있도록 하였다.The gas box cover 4 is mounted on the upper surface of the chamber cover 15 forming the reaction chamber 3, and the face plate 10 is mounted on the lower side of the chamber cover 15 to be introduced into the process space 19. Thus, the reaction gas supplied from the gas supply unit 2 can be sprayed with a uniform density.

반응챔버(3)를 형성하는 챔버본체(11)의 내부에 형성되는 프로세스공간(19)에는 기판(W)이 안치되는 기판지지히팅판(8)를 설치하였고, 기판지지히팅판(8)는 알루미늄으로 된 본체의 내부에 히터를 내장하였으며, 히터는 소정의 온도(150 ~ 800 ℃)로 제어할 수 있도록 하였다.In the process space 19 formed inside the chamber body 11 forming the reaction chamber 3, a substrate support heating plate 8 on which the substrate W is placed is installed, and the substrate support heating plate 8 is The heater was built in the body of aluminum, and the heater was controlled to a predetermined temperature (150 ~ 800 ℃).

상기 기판지지히팅판(8)에는 다수의 홀을 일정한 간격으로 상하로 연통되도록 뚫어 세라믹 또는 양극화된 알루미늄으로 성형된 리프트핀(9)을 장전하였고, 리프트핀(9)은 기판지지히팅판(8)가 하향하였을 때에 리프트클램프링(구체적으로 도시하지 아니함)에 의해 기판지지히팅판(8)의 상측으로 돌출(작동)되어 기판지지히팅판(8)의 상측에 안치된 웨이퍼(W)를 기판지지히팅판(8)에서 분리(상향)시켜 주도록 하였다.The substrate supporting heating plate 8 was equipped with a lift pin 9 formed of ceramic or anodized aluminum by drilling a plurality of holes to communicate vertically at regular intervals, and the lift pin 9 was provided with a substrate supporting heating plate 8. When () is downward, the wafer (W) placed on the upper side of the substrate support heating plate 8 is projected (operated) by the lift clamping ring (not specifically shown) to the upper side of the substrate support heating plate 8. The support heating plate 8 was separated (up).

기판지지히팅판(8)의 밑면 중앙에는 히터지지대(7)를 형성(장착)하여 챔버밑판(16)의 중앙에 뚫어진 유통공(17)으로 삽입시키고, 챔버밑판(16)의 하측에 설치되는 히터리프트어셈블리(구체적으로 도시하지 아니함)에 의해 승/하강 시킬 수 있도록 하였다.The heater support 7 is formed (mounted) in the center of the bottom surface of the substrate support heating plate 8 and inserted into the distribution hole 17 drilled in the center of the chamber bottom plate 16, and is installed below the chamber bottom plate 16. Heater lift assembly (not specifically shown) allows it to move up and down.

챔버밑판(16)의 밑면과 챔버지지부(5)의 상면과의 사이에는 벨로우즈(6)를 장착하여, 프로세스공간(19)에 있는 가스가 외부로 노출되는 것을 방지하고, 외부의 먼지와 이물질 등이 프로세스공간(19)의 내부로 침투하는 것을 방지하도록 하였다.A bellows 6 is mounted between the bottom surface of the chamber bottom plate 16 and the top surface of the chamber support 5 to prevent the gas in the process space 19 from being exposed to the outside. Infiltration into the process space 19 was prevented.

이하, 본 발명에 따른 화학기상 증착 반응챔버(1-1)의 작동관계를 설명한다.Hereinafter, the operating relationship of the chemical vapor deposition reaction chamber 1-1 according to the present invention will be described.

본 발명에 따른 화학기상 증착 반응챔버(1-1)는 기판지지히팅판(8)이 하향되어 있는 상태에서 작동한다.The chemical vapor deposition reaction chamber 1-1 according to the present invention operates in a state where the substrate supporting heating plate 8 is downward.

작동스위치를 조작하게 되면, 기판지지히팅판(8)의 내부에 내장된 히터에 전원이 공급되어 기판지지히팅판(8)는 일정한 온도(대체로 150 ~ 800℃ 정도)로 가열시킨다.When the operation switch is operated, power is supplied to a heater built in the substrate support heating plate 8 so that the substrate support heating plate 8 is heated to a constant temperature (approximately 150 to 800 ° C.).

또 구체적으로 도시하지 아니하였으나, 로봇(구체적으로 도시하지 아니함)의 로봇팔에 의해 웨이퍼(W)를 챔버본체(11)에 형성된 개구부(14)를 통해 프로세스공간(19)의 내부로 유입시켜 기판지지히팅판(8)의 상측으로 돌출되는 리프트핀(9)의 상측에 안치시키고, 웨이퍼(W)를 기판지지히팅판(8)의 상측으로 돌출된 리프트핀(9)에 안치시킨 로봇팔은 챔버본체(11)의 외부로 인출된다.Although not shown in detail, the wafer W is introduced into the process space 19 through the opening 14 formed in the chamber body 11 by a robot arm of a robot (not specifically shown). The robot arm placed on an upper side of the lift pin 9 protruding upward of the support heating plate 8 and placed on the lift pin 9 protruding upward of the substrate support heating plate 8 is provided. It is drawn out of the chamber body 11.

로봇팔이 개구부(14)를 통하여 챔버본체(11)의 외부로 인출된 상태에서 반응챔버(3)의 내부 즉, 프로세스공간(19)의 내부는 진공상태로 유지시키고, 동시에 가스공급부(2)를 통하여 기상 증착에 필요한 가스(GAS)를 공급 충진시킨다.In the state where the robot arm is drawn out of the chamber body 11 through the opening 14, the inside of the reaction chamber 3, that is, the inside of the process space 19 is maintained in a vacuum state, and at the same time, the gas supply unit 2 The gas (GAS) is supplied and filled through the vapor deposition.

챔버지지부(5)의 하단에 구성된 히터리프트어셈블리(구체적으로 도시하지 아니함)를 작동시켜 웨이퍼(W)가 안치된 기판지지히팅판(8)를 상승시키면 리프트 핀(9)이 하향하면서 웨이퍼(W)를 기판지지히팅판(8)의 상면에 안치시키고, 웨이퍼(W)가 안치된 기판지지히팅판(8)은 페이스플레이트(10)의 밑면에 근접하도록 직 하방까지 상승하여 정지하며, 기판지지히팅판(8)의 상면에 안치된 웨이퍼(W)는 기판지지히팅판(8)에 열기가 전열되어 가열된 상태를 유지하게 된다.By operating a heater lift assembly (not specifically shown) configured at the lower end of the chamber support part 5 to raise the substrate supporting heating plate 8 on which the wafer W is placed, the lift pin 9 moves downward while the wafer W ) Is placed on the upper surface of the substrate support heating plate 8, and the substrate support heating plate 8, on which the wafer W is placed, rises and stops directly downward to approach the bottom surface of the face plate 10, and supports the substrate. The wafer W placed on the upper surface of the heating plate 8 maintains a heated state in which heat is heated on the substrate supporting heating plate 8.

가스(GAS)는 페이스플레이트(10)를 통하여 균일하게 분사되어, 페이스플레이트(10)와 기판지지히팅판(8)와의 사이 즉, 프로세스공간(19)으로 유입되고, 페이스플레이트(10)와 기판지지히팅판(8)와의 사이로 유입된 가스(GAS)는 기판지지히팅판(8)에 안치된 웨이퍼(W)의 표면과 접촉되면서 증착이 이루어진다.The gas GAS is uniformly injected through the face plate 10 and flows in between the face plate 10 and the substrate support heating plate 8, that is, into the process space 19, and the face plate 10 and the substrate. The gas GAS introduced into the support heating plate 8 is deposited while contacting the surface of the wafer W placed on the substrate support heating plate 8.

특히, 프로세스공간(19)으로 유입되는 가스(GAS)는 하단에 형성된 배출가스하단펌핑홀(20)의 상단에 안치된 펌핑링판(23)에 의해 차단되어 일시에 배출되지 못하고 펌핑링판(23)에 뚫어진 가스배출공(24)에 의해서 일부만 배출되며, 따라서 가스(GAS)는 프로세스공간(19)에서 거의 정체된 상태를 유지하게 되므로 웨이퍼(W)의 표면에는 증착이 균일한 상태로 이루어진다.In particular, the gas GAS introduced into the process space 19 is blocked by the pumping ring plate 23 placed at the upper end of the exhaust gas lower pumping hole 20 formed at the bottom thereof, and thus cannot be discharged at once. Only a part of the gas is discharged by the gas discharge hole 24, and thus, the gas GAS is maintained in a substantially static state in the process space 19, so that the deposition of the gas on the surface of the wafer W is uniform.

증착이 완료되면 가스(GAS)의 공급을 중단시키고, 프로세스공간(19)의 내부에 잔류된 가스(GAS)는 펌핑장치(구체적으로 도시하지 아니함)의 작동에 의해 배출가스하단펌핑홀(20)로 배기되면서 가스하단배출공(21)과 펌핑홀더(22)를 통해 외부로 배출된다.When the deposition is completed, the supply of the gas GAS is stopped, and the gas GAS remaining in the process space 19 is discharged by the operation of a pumping device (not specifically shown). While being exhausted to the outside through the gas discharge outlet 21 and the pumping holder 22 is discharged to the outside.

동시에 챔버지지부(5)의 하단에 구성된 히터리프트어셈블리(구체적으로 도시하지 아니함)가 역으로 작동하여 기판지지히팅판(8)을 하향시킨다.At the same time, a heater lift assembly (not specifically shown) configured at the lower end of the chamber support 5 operates in reverse to lower the substrate support heating plate 8.

기판지지히팅판(8)이 하향하면 기판지지히팅판(8)에 장전된 리프트핀(9)이 챔버밑판(16)에 의해 받쳐 지면서 상승하게 되고, 리프트핀(9)이 기판지지히팅판(8)의 상측으로 돌출되면 리프트핀(9)에 의해 받쳐지는 웨이퍼(W)는 기판지지히팅판(8)에서 분리(이격)되어 상측으로 부상된 상태를 유지하게 된다.When the substrate support heating plate 8 is downward, the lift pins 9 loaded on the substrate support heating plate 8 are supported by the chamber bottom plate 16 to rise, and the lift pins 9 are supported by the substrate support heating plate ( 8, the wafer W supported by the lift pin 9 is separated (spaced) from the substrate support heating plate 8 to maintain the floating state upward.

로봇(구체적으로 도시하지 아니함)은 기판지지히팅판(8)의 상측으로 부상되어 있는 웨이퍼(W)를 인출하여 차기 공정으로 이송시키고, 이어서 새로운 웨이퍼(W)를 리프트핀(9)의 위에 안치시켜 주며, 새로운 웨이퍼(W)가 기판지지히팅판(8)에 안치되면 전술한 바와 같은 증착 공정이 반복적으로 실시되면서 웨이퍼(W)의 표면에 박막을 화학기상 증착시키게 된다.The robot (not specifically shown) pulls out the wafer W floating on the upper side of the substrate support heating plate 8 and transfers it to the next process, and then places the new wafer W on the lift pin 9. When the new wafer W is placed on the substrate support heating plate 8, the deposition process as described above is repeatedly performed to chemically deposit a thin film on the surface of the wafer W.

본 발명은 상기와 같은 과정이 반복적으로 실시되면서 웨이퍼(W)의 표면에 박막을 화학기상 증착시키게 된다.In the present invention, the thin film is deposited on the surface of the wafer W while the above process is repeatedly performed.

상기에서 본 발명은 특정한 실시 예에 대하여만 설명 및 도시되었지만, 본 발명의 기술사상범위 내에서 다양한 변형 및 수정할 수 있음은 당업자에 있어 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속함은 당연한 것이다.While the invention has been described and illustrated only with respect to specific embodiments thereof, it will be apparent to those skilled in the art that various changes and modifications can be made within the spirit and scope of the invention, and such modifications and variations are within the scope of the appended claims. It is natural.

도 1는 기존의 화학 기상증착장치의 반응 챔버 단면도.1 is a cross-sectional view of a reaction chamber of a conventional chemical vapor deposition apparatus.

도 2는 본 발명에 따른 화학 기상 증착장치의 단면도.2 is a cross-sectional view of a chemical vapor deposition apparatus according to the present invention.

도 3a 및 도 3b는 펌핑 플레이트의 평면도/단면도.3A and 3B are plan / sectional views of the pumping plate.

도 4는 본 발명에 따른 가스배출공에 탈/부착되는 펌핑링캡의 단면도.Figure 4 is a cross-sectional view of the pumping ring cap detachable / attached to the gas discharge hole according to the present invention.

* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

1. 1-1: 화학기상 증착 반응챔버 2: 가스공급부1.1-1: Chemical Vapor Deposition Reaction Chamber 2: Gas Supply Section

3: 반응챔버 4: 가스박스커버 5: 챔버지지부3: reaction chamber 4: gas box cover 5: chamber support

6: 벨로우즈 7: 히터지지부 8: 기판지지히팅판6: bellows 7: heater support part 8: board support heating plate

9: 리프트핀 10: 페이스플레이 11: 챔버본체9: lift pin 10: face play 11: chamber body

12: 배출가스측면펌핑홀 13: 가스측면배출공 14: 개구부12: exhaust gas side pumping hole 13: gas side exhaust hole 14: opening

15: 챔버커버 16: 챔버밑판 17: 유통공15: Chamber cover 16: Chamber bottom plate 17: Distribution hole

18: 볼트스크류 19: 프로세스공간 20: 배출가스하단펌핑홀18: Boltscrew 19: Process space 20: Exhaust gas bottom pumping hole

21: 가스하단배출공 22: 펌핑홀드 23: 펌핑링판21: gas bottom discharge hole 22: pumping hold 23: pumping ring plate

24: 가스배출공 25: 장착공 26: 펌핑링캡24: gas discharge hole 25: mounting hole 26: pumping ring cap

Claims (4)

화학 기상 증착장치의 반응챔버에 있어서;A reaction chamber of a chemical vapor deposition apparatus; 반응챔버(3)는, 상측에 챔버커버(15)가 결합되는 챔버본체(11)의 하측에 분할 형성된 챔버밑판(16)을 조립시킨 것과;The reaction chamber 3 includes an assembly of a chamber bottom plate 16 formed on a lower side of the chamber body 11 to which the chamber cover 15 is coupled to the upper side; 챔버밑판(16)은, 중앙에 유통공(17)을 상하 개방되게 뚫어 주고, 유통공(17)의 외측 상면에는 배출가스하단펌핑홀(20)을 요홈으로 형성하며, 배출가스하단펌핑홀(20)에는 가스하단배출공(21)을 챔버밑판(16)의 밑면으로 개방되게 뚫어주며, 가스하단배출공(21)의 단부에 펌핑홀더(22)를 장착한 것과;The chamber bottom plate 16 drills the distribution hole 17 at the center so as to be opened up and down, and forms a discharge gas lower pumping hole 20 as a recess on the outer upper surface of the distribution hole 17, and discharge gas lower pumping hole ( 20, the lower gas discharge hole 21 is opened to the bottom of the chamber bottom plate 16, and the pumping holder 22 is mounted at the end of the lower gas discharge hole 21; 챔버밑판(16)에 형성된 배출가스하단펌핑홀(20)의 상단에는 가스배출공(24)이 뚫어진 펌핑링판(23)을 장착시킨 것과;A pumping ring plate 23 having a gas discharge hole 24 perforated at the upper end of the exhaust gas lower pumping hole 20 formed in the chamber bottom plate 16; 펌핑링판(23)에 형성된 가스배출공(24)에는 펌핑링캡(26)을 장착한 것;이 포함되는 것을 특징으로 하는 화학 기상 증착장치의 반응챔버.The gas discharge hole (24) formed in the pumping ring plate (23) is equipped with a pumping ring cap (26); the reaction chamber of the chemical vapor deposition apparatus comprising a. 청구항 1에 있어서, 챔버밑판(16)에 형성되는 배출가스하단펌핑홀(20)의 상단에 장착되는 펌핑링판(23)은 링 형상으로 형성한 것;을 특징으로 하는 화학 기상 증착장치의 반응챔버.The reaction chamber of the chemical vapor deposition apparatus according to claim 1, wherein the pumping ring plate 23 mounted at the upper end of the exhaust gas lower pumping hole 20 formed in the chamber bottom plate 16 is formed in a ring shape. . 삭제delete 청구항 2에 있어서, 펌핑링판(23)에 뚫어지는 가스배출공(24)은 원형으로 형성한 것을 특징으로 하는 화학 기상 증착장치의 반응챔버.The reaction chamber according to claim 2, wherein the gas discharge hole (24) formed in the pumping ring (23) is formed in a circular shape.
KR1020070070632A 2007-07-13 2007-07-13 A chamber of chemical vapor deposition KR100925568B1 (en)

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Citations (4)

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Publication number Priority date Publication date Assignee Title
JPS55102238A (en) 1979-01-30 1980-08-05 Matsushita Electronics Corp Apparatus for plasma-gas-phase growth
KR20020000588A (en) * 2000-06-24 2002-01-05 서성기 Reactor for depositing thin film on wafer
JP2004342703A (en) 2003-05-13 2004-12-02 Tokyo Electron Ltd Device and method for plasma treatment
KR100515262B1 (en) 2001-08-28 2005-09-15 엔이씨 엘씨디 테크놀로지스, 엘티디. Substrate processing apparatus and method for performing exposure process in gas atmosphere

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55102238A (en) 1979-01-30 1980-08-05 Matsushita Electronics Corp Apparatus for plasma-gas-phase growth
KR20020000588A (en) * 2000-06-24 2002-01-05 서성기 Reactor for depositing thin film on wafer
KR100515262B1 (en) 2001-08-28 2005-09-15 엔이씨 엘씨디 테크놀로지스, 엘티디. Substrate processing apparatus and method for performing exposure process in gas atmosphere
JP2004342703A (en) 2003-05-13 2004-12-02 Tokyo Electron Ltd Device and method for plasma treatment

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