KR200453917Y1 - Apparatus for processing substrate - Google Patents

Abstract

The present invention provides a chamber, a shower head disposed in the upper part of the chamber to supply a reaction gas into the chamber, a substrate supporting part installed to be lifted in the lower part of the chamber, and a substrate inserted into the chamber; A shadow ring positioned on an upper portion of the substrate support to cover an edge of the substrate, the shadow ring being supported on an inner wall of the chamber by a plurality of seating protrusions protruding outwardly, the bottom surface of each seating protrusion; A curved surface portion is formed in an area close to the center of the shadow ring, and each of the seating protrusions has a horizontal cross-sectional area that gradually increases from a lower portion to an upper portion by the curved portion.

The present invention as described above forms a part of the lower surface of the seating protrusion supporting the shadow ring on the inner wall of the chamber in a curved shape, thereby preventing the thin film from being deposited on the bottom surface of the seating protrusion, or the thin film deposited thereon. Therefore, the phenomenon in which either of the shadow rings is lifted up even during long-term use does not occur. In addition, it is possible to prevent the film quality from being degraded by particles deposited on the lower surface of the shadow ring and falling off again.

Substrate, Wafer, Deposition, Chamber, CVD, Shadow Ring

Description

Substrate Processing Unit {APPARATUS FOR PROCESSING SUBSTRATE}

The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus having a shadow ring to cover the edge of the substrate during the thin film process to prevent the thin film is deposited there.

In the process for manufacturing a semiconductor device, a process of forming a film of a required material by reacting a reactant on a wafer surface is called a chemical vapor deposition process (hereinafter referred to as a “CVD”) process, and a process chamber which performs a CVD process. The edge of the substrate includes a showerhead for supplying a reaction gas into the process chamber, a substrate support on which the substrate inserted into the process chamber is seated, and a reaction gas used in the CVD process on the substrate edge during the CVD process. A covering shadow ring is installed. The shadow ring is supported by the inner wall of the chamber, and is usually installed to be moved up and down in a predetermined range along the inner wall of the chamber.

However, in order to stably support the inner shadow ring of the conventional shadow ring, the diameter of the outer circumference is slightly smaller than the inner wall of the chamber, so that the gap between the shadow ring and the inner wall of the chamber is maintained little. Therefore, exhaust holes formed for exhausting the reaction gas supplied into the chamber are formed in the chamber inner wall at a position close to the shower head. In addition, a substrate is seated at the center of the substrate support, and a shadow ring covering the substrate and the substrate support is located at the edge of the substrate support to form a stepped structure having a higher edge than the height of the center.

For this reason, the reaction gas supplied from the shower head should be evenly supplied to the upper part of the substrate and then smoothly exhausted through the exhaust hole. The exhaust gas is not smooth and the congestion phenomenon and the vortex phenomenon occur near the shadow ring and the exhaust hole. The problem that the thin film formed at the edge of the film becomes thicker than the thin film formed at the center of the substrate has occurred.

Further, when the shadow ring moves up and down, the deposits formed on the inner wall of the chamber are sharpened and are deposited on the lower surface of the shadow ring. Therefore, even in the long-term use, even if the inside of the chamber is periodically cleaned, the thin film deposited on the lower surface of the shadow ring is not completely removed and continues to grow, thereby limiting the vertical movement range of the shadow ring and causing one of the shadow rings to be lifted up. This causes a decrease in the operation rate of the equipment. In addition, some deposits that fall off the lower surface of the shadow ring may adversely affect the thin film process, causing a decrease in thin film quality.

The present invention is proposed to solve the above problems, and the size of the shadow ring is equal to or smaller than the substrate support to form a sufficient flow path for the reaction gas to pass between the substrate support assembly and the chamber to smoothly exhaust the reaction gas. The present invention provides a substrate processing apparatus having a shadow ring for uniformly forming a thin film deposited on a substrate.

In addition, the present invention provides a substrate processing apparatus having a shadow ring to improve the shape of the upper surface of the shadow ring to minimize the phenomenon of stagnation and vortex of the reaction gas.

In addition, by improving the shape of the lower surface of the shadow ring, the shadow ring prevents the thin film from being deposited on the lower surface of the shadow ring, or the thin film deposited thereon to continue to grow, thereby minimizing the drop of the shadow ring even after long use. It provides the substrate processing apparatus provided with.

Substrate processing apparatus according to an aspect of the present invention, the chamber; A shower head disposed at an upper portion of the chamber to supply a reaction gas into the chamber; A substrate support part installed to be elevated below the inside of the chamber to seat the substrate drawn into the chamber; And a shadow ring positioned above the substrate support to cover an edge of the substrate. The shadow ring is supported on the inner wall of the chamber by a plurality of seating protrusions protruding outwardly, a curved portion is formed in a region close to the center of the shadow ring of each of the seating protrusions, the curved surface As a result, each of the seating protrusions gradually increases in horizontal cross-sectional area from the bottom to the top.

At least one through hole penetrating the upper and lower sides is preferably formed in the seating protrusion.

It is preferable that a liner is provided between the inner wall of the chamber and the shadow ring, and the liner is provided with a plurality of seating guide grooves extending up and down corresponding to the seating protrusions.

The substrate support portion is spaced apart from the inner wall of the chamber, the shadow ring is preferably formed in the outer circumference of the same size or smaller than the outer circumference of the substrate support.

According to the present invention, a reaction gas injected onto the substrate is moved along the inclined surface of the shadow ring to the outside of the shadow ring, and then a smooth gas exhaust flow is formed through the flow path formed between the shadow ring and the chamber inner wall. The uniformity of the thin film deposited on can be improved.

In addition, the present invention by forming a part of the lower surface of the seating protrusion for supporting the shadow ring on the inner wall of the chamber in a curved shape, to prevent the thin film is deposited on the bottom surface of the seating protrusion, or the thin film deposited thereon continues to grow. Therefore, the phenomenon in which either of the shadow rings is lifted up even during long-term use does not occur. In addition, it is possible to prevent the film quality from being degraded by particles deposited on the lower surface of the shadow ring and falling off again.

Hereinafter, with reference to the accompanying drawings will be described an embodiment according to the present invention in more detail. However, the present invention is not limited to the embodiments disclosed below, but will be implemented in a variety of different forms, only these embodiments to complete the disclosure of the present invention, complete the scope of the invention to those skilled in the art It is provided to inform you.

1 is a cross-sectional view schematically showing a substrate processing apparatus according to the present invention.

Referring to FIG. 1, the substrate processing apparatus includes a chamber 10 having an accommodating space including a reaction space therein and provided with an exhausting means 70 for exhausting a reaction gas, and inside the chamber 10. A shower head 20 disposed at an upper portion of the shower head 20 to supply a reaction gas into the chamber 10, and a substrate 1 mounted to the lower portion of the inside of the chamber 10 to be inserted into the chamber 10. And a shadow ring 40 seated on an upper portion of the substrate 1 to cover an edge of the substrate 1.

Here, the substrate 1 refers to all the workpieces capable of forming a thin film on at least one surface, and is used in a broad sense including an organic substrate for a liquid crystal display device, a wafer for semiconductor manufacture, and the like.

The chamber 10 includes a chamber body 10b having an open upper portion, and a chamber lead 10a covering an upper portion of the chamber body 10b. In addition, the shower head 20 is positioned below the chamber lid 10a to form a reaction space under the shower head 20. Of course, the chamber 10 may be integrally formed with the chamber body 10b and the chamber lead 10a, or may be formed separately from the upper chamber and the lower chamber. At this time, the receiving space in the chamber 10 including the reaction space may be formed in various ways corresponding to the shape of the substrate 1 provided, for example, in the case of a conventional wafer to have a circular horizontal cross section In the case of a rectangular glass substrate, it may be formed to have a horizontal cross section of a square.

A hollow liner 90 is provided inside the inner wall of the chamber body 10b. The liner 90 not only serves to protect the inner wall of the chamber body 10b but also has an inner portion of the upper end portion enclosing the outside of the shadow ring 40 to support the shadow ring 40 and at the same time the shadow ring. It serves to guide the vertical movement of the 40. The liner 90 may extend in the vertical direction to cover the entire inner wall of the chamber body 10b, in which case a top liner, a middle liner, It may be separately manufactured in the form of a bottom liner.

A plurality of seating guide grooves 13 on which the shadow ring 40 is seated is formed on the inner wall of the liner 90 so as to be spaced apart from each other along the circumferential direction. At this time, each of the seating guide grooves 13 is preferably formed long vertically to guide the vertical movement of the shadow ring (40). Of course, when the liner 90 is not provided, the seating guide groove 13 may be directly formed on the inner wall of the chamber body 10b.

In addition, the chamber body (10b) is provided with an exhaust means (70). In this case, the exhaust water stage 70 is an exhaust passage 71 formed in the inner wall of the chamber body 10b and an exhaust passage connected to the exhaust hole 71 to guide unreacted gas to the outside of the chamber 10. And an exhaust pump 75 connected to the exhaust passage 73 to exhaust unreacted gas.

If the exhaust hole 71 is formed at a position lower than the substrate support 30 and is formed at a lower position than the flow path 60 to be described later, the positions, intervals, heights, and shapes of the exhaust holes 71 are not limited. It will be formed to change. In the present invention, a plurality of exhaust holes 71 are formed along the circumferential direction on the lower side of the inner wall of the chamber body 10b, that is, at the bottom side of the chamber 10 receiving space. In this case, the plurality of exhaust holes 71 may be formed at the same height with each other at equal intervals in order to exhaust the reaction gas to be exhausted evenly in all directions without being concentrated in one direction.

The exhaust path 73 communicates the plurality of exhaust holes 71 with the outside of the chamber 10, and is inserted into the chamber body 10b or formed outside the chamber body 10b. Preferably it is interpolated in the chamber body (10b) of the position where the plurality of exhaust holes 71 are formed, connected to the plurality of exhaust holes 71, is provided outside the chamber 10 at one or more points It is connected to the exhaust pipe 77 is in communication with the outside of the chamber (10).

In addition, an exhaust pump 75 is provided in the exhaust pipe 77 to exhaust unreacted gas introduced into the exhaust path 73 through the exhaust hole 71 to the outside of the chamber 10. In this case, the number of exhaust pumps 75 may preferably correspond to the number of exhaust pipes 77.

The showerhead 20 is a means for supplying the reaction gas into the chamber 10, and may be changed by any means as long as it can supply the reaction gas into the chamber 10. The shower head 20, which is a general means for supplying the reaction gas, is connected to the gas supply pipe through which the reaction gas is supplied, and uniformly supplies the reaction gas supplied through the gas supply pipe into the chamber 10.

2 is an exploded perspective view showing a substrate support assembly according to an embodiment of the present invention, Figure 3 is an enlarged cross-sectional view showing an enlarged portion of the substrate support assembly according to an embodiment of the present invention.

2 and 3, the substrate support assembly includes a substrate support for supporting the substrate and a shadow ring provided on the substrate support to cover an edge of the substrate.

The substrate support part 30 moves the substrate 1 brought into the chamber into the reaction space. A groove 31 is formed in the center of the upper surface of the substrate support 30 to allow the substrate to be seated and fixed. The shaft 33 which is elevated by means is mounted. In addition, the substrate support 30 maintains the substrate 1 seated on the upper surface at a predetermined process temperature, and at least one of a cooling means and a heating means may be installed in an inner body thereof for controlling the substrate temperature. have.

 The substrate support part 30 is manufactured to correspond to the shape of the inside of the chamber 10. For example, in this embodiment, it is manufactured in a circular shape. The substrate support 30 is a component that is elevated in the chamber 10 and is spaced apart from the inner wall of the chamber 10 by a predetermined interval. As the substrate support 30 and the inner wall of the chamber 10 are spaced apart from each other, a flow path 60 through which the reaction gas passes through the separation space is formed. Preferably, the inner wall of the chamber body 10b and the outer periphery of the substrate support part 30 are spaced at equal intervals so that the flow path 60 of the reaction gas formed between the substrate support part 30 and the chamber body 10b is constant. It is preferably formed in width.

The shadow ring 40 is a member covering an edge of the substrate 1 seated on the substrate support 30, and has a body, ie, a ring portion, having a center penetrating through the circumferential direction. The outer circumferential diameter of the shadow ring 40 may be any size if spaced apart from the inner wall of the chamber body 10b can secure a flow path 60 through which reaction gas can pass at least in part. . However, it is preferable that the outer circumferential diameter of the shadow ring 40 is equal to or smaller than the diameter of the substrate support 30. Through this, it is possible to sufficiently secure the flow path 60 of the reaction gas formed between the substrate support 30 and the inner wall of the chamber 10.

In addition, the shadow ring 40 preferably has an inclined surface 41, the inner side of the upper surface of which is inclined downward from the outer side of the predetermined section. As a result, when the reaction gas is exhausted through the flow path 60 formed between the outer circumference of the substrate support assembly 50 and the inner wall of the chamber body 10b and exhausted to the exhaust hole 71, the shadow ring 40 and the substrate ( 1) Minimize congestion or vortex caused by the height difference between them.

In particular, the shadow ring 40 is spaced apart from each other along the circumferential direction, a plurality of seating projections 43 protruding in the outward direction is formed. At this time, the number of seating protrusions 43 is not necessarily limited to four as shown in Figure 1, it may be provided in the number less or more. As the seating protrusion 43 spans the seating guide groove 13, the shadow ring 40 is supported on the inner wall of the chamber body 10b, and when the seating protrusion 43 is seated on the substrate support 30 and rises together, The protrusion 43 is guided to the seating guide groove 13. In addition, it is preferable that the through hole 43a is formed in the seating protrusion 43 to allow the reaction gas to pass therethrough to assist the exhaust of the unreacted gas as much as possible. In addition, the seating protrusion 43 has a curved portion 43c formed at an area close to the center of the shadow ring 40 of the lower surface thereof, and the curved portion 43c has a seating protrusion 43 from the lower portion to the upper portion thereof. Is formed into a shape in which the horizontal cross-sectional area is increased. Therefore, the horizontal area in which the thin film is likely to be deposited in the lower surface 43b of the mounting protrusion 43 can be minimized. For this reason, it becomes difficult to deposit a thin film in the lower surface 43b of the mounting protrusion 43, and it becomes more difficult for the deposited thin film to grow. That is, the deposit deposited on the inner wall of the chamber 10, in particular, the seating guide groove 13 of the liner 90 during the thin film process, and then collected while being moved up and down by the shadow ring 40, is collected on the bottom surface of the seating protrusion 43. Most of them cannot be deposited on the lower surface 43b of the mounting protrusion 43, and are exhausted to the outside of the chamber 10 during the subsequent cleaning process.

On the other hand, the substrate processing apparatus according to the present embodiment receives the substrate 1 carried into the chamber 10 to be seated on the substrate support 30 (loading, loading), on the contrary, the substrate seated on the substrate support 30 And a substrate lift 80 for lifting (1) to the unloading position.

The substrate lift 80 includes a plurality of lift pins 81 penetrating through the substrate support part 30, a pin support 83 to which lower ends of the lift pins 81 are integrally fixed, and the pin support. And a pin lifting portion 85 for moving the 83 up and down. At this time. A plurality of lift pins 81 integrally fixed to the pin support 83 in accordance with the vertical movement of the pin lifting unit 85 can move to the same height to maintain a stable substrate loading and unloading by maintaining the substrate surface in a horizontal state. have.

Referring to the substrate processing method using a substrate processing apparatus according to the present embodiment having such a configuration as follows.

4 to 6 are operation cross-sectional views showing the operation of the substrate processing apparatus according to the embodiment of the present invention.

First, when the substrate G is loaded into the chamber 10 by the substrate transfer means, for example, a robot arm, the lift pin 81 is raised on the surface of the substrate support part 30 to raise the substrate G. ) Is received, and the transferred substrate G is seated in the upper groove 31 of the substrate support 30 as the lift pin 81 descends.

Subsequently, as the substrate support 30 is raised, the edge of the substrate 1 is covered by the shadow ring 40, and as the substrate support 30 is further raised, the substrate 1 and the shadow ring 40 are also together. Ascend, the substrate 1 is moved to the process position. In this case, since the shadow ring 40 has the same or smaller diameter as the substrate support part 30, the shadow ring 40 is spaced apart between the substrate support assembly 50 and the inner wall of the chamber body 10b to secure an unreacted gas flow path 60. .

Subsequently, the reaction gas is injected onto the substrate through the shower head 20. A portion of the reaction gas is deposited on the upper surface of the substrate to form a thin film, and the unreacted gas is not reacted with the chamber 10 through the flow path 60 between the substrate support assembly 50 and the inner wall of the chamber body 10b. ) Move to the lower side inside. At this time, since the inclined surface is formed inside the upper surface of the shadow ring 40, stagnation and vortex phenomena of the unreacted gas generated by the height difference between the wafer 1 and the shadow ring 40 are minimized. As such, the unreacted gas is moved to the lower portion of the chamber 10 through the flow path 60 in a state in which stagnation and vortex phenomena are minimized, and then through the exhaust hole 71 formed in the lower portion of the chamber 10 ( 73, and is smoothly exhausted to the outside of the chamber 10 through the exhaust pipe 77 by the operation of the exhaust pump (75).

Subsequently, when the substrate lift 30 is lowered to the original position, as the lift pin 81 is raised again, the substrate 1 is unloaded on the substrate support 30 and transferred to the robot arm (not shown). The robot arm is taken out of the chamber 10 and put into a subsequent process.

In the process of substrate processing, a thin film may be deposited on the inner wall of the chamber 10, in particular, the seating guide groove 13 formed inside the liner 90, and the thin film may be cut while moving up and down of the shadow ring 40. The lower surface 43b of the seating protrusions 43 may be collected and deposited there. However, the present invention forms a curved portion 43c in a region close to the center of the shadow ring 40 in the lower surface of the mounting protrusion 43, thereby minimizing a horizontal region in which a thin film is likely to be deposited. As a result, the thin film is prevented from being deposited on the lower surface 43b of the seating protrusion 43, or the deposited thin film is continuously grown. Therefore, either of the shadow rings 40 is lifted even during long-term use. Do not. In addition, it is possible to prevent the film quality from deteriorating due to particles deposited on the lower surface 43b of the shadow ring 40 and falling off again.

As described above, the present invention has been described with reference to the foregoing embodiments and the accompanying drawings, but the present invention is not limited thereto, and is defined by the utility model registration claims to be described below. Therefore, it will be apparent to those skilled in the art that the present invention may be variously modified and modified without departing from the technical spirit of the utility model registration claims described below.

1 is a cross-sectional view schematically showing a substrate processing apparatus according to the present invention.

Figure 2 is an exploded perspective view showing a substrate support assembly according to an embodiment of the present invention.

Figure 3 is an enlarged cross-sectional view showing an enlarged portion of the substrate support assembly according to an embodiment of the present invention.

4 to 6 is an operation cross-sectional view showing the operation of the substrate processing apparatus according to an embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

10: chamber 11: inlet

13: Seating guide groove 20: Shower head

30: substrate support 31: groove

40: shadow ring 41: inclined surface

43: seating protrusion 43a: through hole

43b: lower surface portion 43c: curved surface portion

50: substrate support assembly 60: flow path

70: exhaust means 71: exhaust hole

73: exhaust passage 75: exhaust pump

77: exhaust pipe 80: lift pin

81: lift pin 83: pin support

85: pin lifting portion 90: liner

Claims (4)

chamber; A shower head disposed at an upper portion of the chamber to supply a reaction gas into the chamber; A substrate support part installed to be elevated below the inside of the chamber to seat the substrate drawn into the chamber; A shadow ring positioned over the substrate support to cover an edge of the substrate; A liner provided between the inner wall of the chamber and the shadow ring and having a plurality of seating guide grooves extending vertically; Produced to protrude in the outward direction of the shadow ring, one end is combined with the shadow ring, the other end includes a seating projection supported on the seating guide groove formed in the liner, And a lower portion of the seating protrusion includes a curved portion extending from a bottom surface thereof and formed in a direction in which the shadow ring is positioned, wherein the seating protrusion gradually increases in horizontal cross-sectional area from the bottom to the top thereof. The method according to claim 1, And at least one through hole is formed in the seating protrusion. delete The method according to claim 1, The substrate support is provided spaced apart from the inner wall of the chamber, The shadow ring is formed of a substrate processing apparatus having an outer circumference having a size equal to or smaller than that of the substrate support.

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