KR200454189Y1 - Chemical Vapor Deposition Apparatus - Google Patents

Abstract

The present invention relates to a chemical vapor deposition apparatus.

According to the present invention, since the shower head is composed of a dual structure in which the shower head body and the bottom plate can be separated, the bottom plate is separated and washed only when the shower head is washed. It can be very economical.

In addition, in separating or coupling the shower head body and the bottom plate, the shower head body and the bottom plate can be easily and conveniently separated / joined using a screw or a coupling hook.

Shower head body, bottom plate, removable structure

Description

Chemical Vapor Deposition Apparatus {Chemical Vapor Deposition Apparatus}

The present invention relates to a chemical vapor deposition apparatus of a semiconductor manufacturing facility, and more particularly to a chemical vapor deposition apparatus formed of a structure that can be separated / combined with the bottom plate having a shower head body and the injection hole.

Recently, in the semiconductor manufacturing industry, the minimum line width applied to the semiconductor integrated circuit process has been steadily decreasing to increase the operation speed of the semiconductor chip and increase the information storage capability per unit area.

In addition, the size of semiconductor devices such as transistors integrated on semiconductor wafers has been reduced to sub-half microns or less. Such a semiconductor device may be manufactured through a deposition process, a photo process, an etching process, and a diffusion process, and at least one semiconductor device may be manufactured when these processes are repeated several times several times.

In particular, the deposition process is an essential process requiring improvement in the reproducibility and reliability of semiconductor device fabrication. The sol-gel method, the sputtering method, the electro-plating method, and the evaporation method are required. , Chemical vapor deposition, molecular beam epitaxy, and the like.

Among them, the chemical vapor deposition method is most commonly used because the deposition characteristics such as step coverage, uniformity, and mass productivity of the thin film formed on the wafer are superior to other deposition methods.

Such chemical vapor deposition methods include low pressure chemical vapor deposition (LPCVD), atmospheric pressure chemical vapor deposition (APCVD), low temperature chemical vapor deposition (LTCVD), plasma enhanced chemical vapor deposition (PECVD), and the like.

For example, the PECVD is a process of forming a dielectric film by depositing a chemical reaction in a gas through an electrical discharge on a wafer surface.

In the PECVD process, a plurality of wafers are introduced into a plasma chemical vapor deposition facility, and then a specific film is formed on the plurality of wafers by performing a PECVD process at a time. However, as semiconductor devices have been highly integrated and wafers have been largely enlarged in recent years, Injecting one wafer into the plasma chemical vapor deposition facility and proceeding the PECVD process, and after the PECVD process is performed on one wafer, cleaning to remove residual gas and reaction products present in the plasma chemical vapor deposition facility. And a purge process. The chemical vapor deposition process such as PECVD process is a process for introducing a raw material into the reaction chamber in a gaseous state to deposit a predetermined film quality through a chemical reaction on the wafer.

Here, when the raw material is in a gaseous state, it may be directly connected to the reactor and supplied, but when the raw material is in a liquid state condensed at room temperature, a bubble method, a vapor flow controller method, and a liquid supply are provided. The raw material is gasified using a Liquid Delivery method or an injection method and then supplied to the shower head of the reaction chamber. For example, the injection method is a liquid raw material by injecting a liquid raw material at a substantially higher pressure than the active gas in the atmosphere of an active gas, such as oxygen gas having a temperature close to or at room temperature and a predetermined pressure lower than the normal pressure And vaporizing the material into the shower head of the reaction chamber. At this time, the liquid raw material is vaporized by the injection pressure while reacting with an active gas such as the oxygen gas. The vaporized raw material is deposited to a predetermined film quality through a chemical reaction on the wafer.

1 is a longitudinal sectional view showing a conventional chemical vapor deposition apparatus.

As shown in FIG. 1, the conventional chemical vapor deposition apparatus 10 includes a process chamber 11 providing a predetermined closed space therein, and a source gas (oxygen gas and TEOS gas) into the process chamber 11. A source gas supply unit 12 for supplying a, and an exhaust unit 14 for pumping air in the process chamber 11 through an exhaust line 13 in communication with the process chamber 12.

Here, the source gas supply unit 12 chemically reacts in the process chamber 11 to generate a plurality of source gases for forming the oxide film, and supply the source gas to the process chamber 11 at a predetermined flow rate.

The process chamber 11 is formed above the chuck 15 for supporting the wafer W in the process chamber 11 and inside the process chamber 11 to inject a source gas onto the upper surface of the wafer W. And a plasma reaction in a high temperature ion state to form a silicon oxide film having high uniformity by mixing a source gas by forming a shower head 16 and an upper portion of the shower head 16 and a lower portion of the chuck 15. Inducing plasma upper and lower electrodes 17 are provided. The upper and lower electrodes 17 of the plasma receive RF power from the outside to induce a plasma reaction.

In the conventional chemical vapor deposition apparatus, the spray hole of the shower head may be blocked during the deposition process for a long time, and thus cleaning or repair is performed regularly to prevent the spray hole from being blocked.

However, in the conventional chemical vapor deposition apparatus, since the bottom plate and the shower head body are formed integrally with the spray holes, the shower head body as well as the bottom plate must be cleaned together, so the shower head cleaning (repair) work itself is difficult and the cleaning work is difficult. There was also a problem of poor efficiency.

In addition, since the shower head body and the bottom plate are integrally formed, there is an uneconomical aspect in that it is not possible to replace only the bottom plate of the shower head and the whole shower head is replaced with a new one.

The present invention is to solve the above-mentioned problems, by configuring the shower head in a dual structure that can be separated from the shower head body and the bottom plate, washing only the bottom plate when cleaning the shower head, easy to wash, easy to replace, Since only the bottom plate can be replaced with a new one, there is an economical side, and a step jaw is formed on the inner side of the shower head body and a catch jaw is formed on the top surface of the bottom plate correspondingly. Its purpose is to provide a chemical vapor deposition apparatus that tightly bonds tightly.

In order to achieve the above object, the chemical vapor deposition apparatus of the present invention includes a process chamber for forming an enclosed space therein; A source gas supply unit supplying a source gas into the process chamber; An exhaust unit for pumping air in the process chamber out of the process chamber through an exhaust line communicating with the process chamber; A chuck formed below the process chamber to support a wafer; A shower head formed above the process chamber to inject a source gas onto an upper surface of the wafer; And upper and lower electrodes formed on an upper portion of the shower head and a lower portion of the chuck to induce a plasma reaction in a high temperature ion state, wherein the shower head comprises: a shower head body fixed inside the process chamber; The bottom plate is detachably coupled to the shower head body and has a plurality of injection holes through which source gas is injected.

Here, the shower head body and the bottom plate may be fastened by screws (or bolts) or by fastening hooks and fastening grooves.

The separate shower head of the chemical vapor deposition apparatus of the present invention includes a shower head body fixed inside the process chamber; And a bottom plate detachably coupled to the shower head body and having a plurality of injection holes through which source gas is injected.

As described above, according to the present invention, since the shower head has a dual structure in which the shower head body and the bottom plate are removable, only the bottom plate is separated and washed when the shower head is washed, so that detailed work is easy and efficient, It is very economical because only the plate can be replaced with a new one.

In addition, in separating or coupling the shower head body and the bottom plate, the shower head body and the bottom plate can be easily and conveniently separated / joined using a screw or a coupling hook.
In addition, the present invention has a stepped jaw is formed on the inner surface of the shower head body and a locking jaw is formed on the upper surface of the bottom plate correspondingly, there is an effect that the stepped jaw and the locking jaw tightly coupled.

Hereinafter, a chemical vapor deposition apparatus according to a preferred embodiment of the present invention with reference to the accompanying drawings will be described in detail.

Figure 2 is a longitudinal cross-sectional view showing a chemical vapor deposition apparatus of the present invention, Figure 3 is an exploded perspective view showing a shower head of the present invention, Figure 4 is a combined perspective view showing a shower head of the present invention.

Referring to FIG. 2, the chemical vapor deposition apparatus 100 of the present invention includes a process chamber 110 that forms a sealed space therein; A source gas supply unit 120 supplying a source gas into the process chamber 110; An exhaust unit 140 for pumping air in the process chamber 110 to the outside of the process chamber 110 through an exhaust line 141 communicating with the process chamber 110; A chuck 150 formed below the process chamber 110 to support the wafer W; A shower head 160 formed above the process chamber 110 to inject a source gas onto an upper surface of the wafer W; And upper and lower electrodes 170 formed on an upper portion of the shower head 160 and a lower portion of the chuck 150 to induce a plasma reaction in a high temperature ion state.

More specifically, the process chamber 110 forms a sealed space therein to form an oxide film on the upper surface of the wafer W using the source gas.

The source gas supply unit 120 is connected to the process chamber 110 through a pipe 121, and supplies a source gas into the process chamber 110.

The chuck 150 is formed below the process chamber 110 to support the wafer W and to suck and fix the wafer W without moving.

The shower head 160 is installed above the process chamber 110 to inject a source gas onto the upper surface of the wafer (W).

The upper and lower electrodes 170 are installed at an upper portion of the shower head 160 and a lower portion of the chuck 150 to induce a plasma reaction in a high temperature ion state. The plasma upper and lower electrodes 170 receive RF power from the outside to induce a plasma reaction.

The exhaust unit 140 serves to pump air in the process chamber 110 to the outside of the process chamber 110 through an exhaust line 141 communicating with the process chamber 110.

The shower head 160 of the present invention has a detachable structure, and is detachably coupled to the shower head body 161 fixed to the inside of the process chamber 110 and the shower head body 161 and source gas is injected. It consists of the bottom plate 163 which has several injection hole 163b.

An inner side surface of the shower head body 161 is provided with an end jaw 161a, and correspondingly, a locking jaw 163a is formed on an upper surface of the bottom plate 163.

The short jaw 161a and the catching jaw 163a may be in close contact with each other so that the shower head body 161 and the bottom plate 163 may be more stably coupled by fastening means described later.

The shower head body 161 and the bottom plate 163 is formed in a structure that can be screwed (S), for this purpose, the shower head body 161 and the bottom plate 163 is a screw (S) Screw hole (H) to be fastened is formed.

Referring to the operation of the chemical vapor deposition apparatus of the present invention configured as described above are as follows.

As shown in FIG. 2, when the wafer W is loaded into the process chamber 110, air in the process chamber 110 is pumped. Here, the pumping in the process chamber 110 is pumped to a higher vacuum than in a deposition process using a subsequent chemical vapor deposition method. That is, the air inside the process chamber 110 is pumped to a high vacuum state in order to remove the air containing contaminants from the inside of the process chamber 110 when the wafer W is loaded.

Next, oxygen gas of a predetermined flow rate is supplied into the process chamber 110. Here, oxygen gas is supplied into the process chamber 110 so that the process chamber 110 has a low vacuum state in which a subsequent deposition process may be performed in a high vacuum state.

Thereafter, TEOS gas is supplied together with oxygen gas at a predetermined flow rate into the process chamber 110. Here, the oxygen gas and the TEOS gas are mixed and flow on the upper portion of the wafer (W). At this time, since the oxygen gas and the TEOS gas do not uniformly react at room temperature, the oxygen gas and the TEOS gas may be combined and reacted by a subsequent high temperature plasma reaction to form a silicon oxide film.

Thereafter, RF power is applied to the upper and lower electrodes 170 of the plasma of the process chamber 110 in a state where oxygen gas and TEOS gas flow inside the process chamber 110, and the plasma reaction is induced to induce a plasma reaction. A silicon oxide film having a predetermined thickness is formed on W). Here, the oxygen gas and the TEOS gas may be uniformly mixed by the plasma reaction at high temperature, and the silicon oxide film may be formed on the surface of the wafer W from these coupling reactions.

Then, when the silicon oxide film is formed to a predetermined thickness, the supply of the source gas supplied into the process chamber 11 is stopped and the RF power supplied to the upper and lower electrodes 170 is cut off to perform a plasma reaction. The gas is stopped and the air inside the process chamber 110 is pumped to remove the source gas inside the process chamber 110.

In the chemical vapor deposition apparatus of the present invention, the shower head 160 has a dual structure in which the shower head body 161 and the bottom plate 163 can be separated, thereby separating only the bottom plate 163 during the shower head cleaning. Since washing is easy and efficient in washing, it is very economical because only the bottom plate 163 can be replaced with a new one.

5 is a modified example of the fastening structure of the shower head body and the bottom plate in the shower head 260 of the present invention.

Referring to FIG. 5, in a modified example of the fastening structure of the shower head body 261 and the bottom plate 263, a coupling hook 261a is formed at an end of the shower head body 261, and the coupling hook 261a is provided. A coupling groove 263a may be formed at the end of the bottom plate 263 corresponding to

In the modified example of the fastening structure of the shower head body 261 and the bottom plate 263 comprised in this way, when the shower head body 261 and the bottom plate 263 are aligned and pressed against each other, the said coupling hook 261a is carried out. Is elastically deformed and inserted into the coupling groove 263a so that the shower head body 261 and the bottom plate 263 may be easily coupled to each other.

When the shower head body 261 and the bottom plate 263 are to be separated, the shower head body 261 and the bottom plate 263 are pulled to both sides, and the coupling hook 261a is elastically deformed and the As the engaging hook 261a is removed from the engaging groove 263a, the shower head body 261 and the bottom plate 263 are easily separated.

As described above, according to the present invention, since the shower head has a dual structure in which the shower head body and the bottom plate are removable, only the bottom plate is separated and washed when the shower head is washed, so the washing work is easy and efficient, and the floor is replaced even when it is replaced. It is very economical because only the plate can be replaced with a new one.

In addition, in separating or coupling the shower head body and the bottom plate, the shower head body and the bottom plate can be easily and conveniently separated / joined using a screw or a coupling hook.

In addition, the close jaw of the shower head body and the locking jaw of the bottom plate is in close contact with the shower head body and the bottom plate has an effect that is more stable and firmly coupled.

As such, the right of the present invention is not limited to the above-described embodiment, but is defined by the claims, and a person skilled in the art of the present invention may make various modifications within the scope of the claims. It is self evident.

Figure 1 is a longitudinal cross-sectional view showing a conventional chemical vapor deposition apparatus

Figure 2 is a longitudinal cross-sectional view showing a chemical vapor deposition apparatus of the present invention

Figure 3 is an exploded perspective view showing a shower head of the present invention

Figure 4 is a perspective view showing a shower head of the present invention

5 is a modified example of the fastening structure of the shower head body and the bottom plate in the shower head of the present invention

* Description of the main parts

100: chemical vapor deposition apparatus

110: process chamber

120: source gas supply unit

140: exhaust

141: exhaust line

W: wafer

150: chuck

160: shower head

161: shower head body

161a: chin

163: bottom plate

163a: hanging jaw

163b: spray hole

170: plasma upper and lower electrodes

S: screw

H: screw hole

Claims (4)

A process chamber 110 forming an airtight space therein; A source gas supply unit 120 supplying a source gas into the process chamber 110; An exhaust unit 140 for pumping air in the process chamber 110 to the outside of the process chamber 110 through an exhaust line 141 communicating with the process chamber 110; A chuck 150 formed below the process chamber 110 to support the wafer W; A shower head 160 formed above the process chamber 110 to inject a source gas onto an upper surface of the wafer W; And And upper and lower electrodes 170 formed on an upper portion of the shower head 160 and a lower portion of the chuck 150 to induce a plasma reaction in a high temperature ion state. The shower head 160 includes a shower head body 161 fixed inside the process chamber 110 and a plurality of injection holes 163b detachably coupled to the shower head body 161 and into which source gas is injected. Consists of a bottom plate 163 having, Step jaw 161a is formed on the inner surface of the shower head body 161, and correspondingly, the step jaw 163a is formed on the top surface of the bottom plate 163. (163a) is in close contact, the shower head body 161 and the bottom plate 163, the chemical vapor deposition apparatus, characterized in that a screw hole (H) to which the screw (S) is fastened. delete A process chamber 110 forming an airtight space therein; A source gas supply unit 120 supplying a source gas into the process chamber 110; An exhaust unit 140 for pumping air in the process chamber 110 to the outside of the process chamber 110 through an exhaust line 141 communicating with the process chamber 110; A chuck 150 formed below the process chamber 110 to support the wafer W; A shower head 260 formed above the process chamber 110 to inject a source gas onto an upper surface of the wafer W; And And upper and lower electrodes 170 formed on an upper portion of the shower head 260 and a lower portion of the chuck 150 to induce a plasma reaction in a high temperature ion state. The shower head 260 is coupled to a shower head body 261 fixed inside the process chamber 110 and a plurality of injection holes 263b detachably coupled to the shower head body 261 and injecting a source gas. Consists of a bottom plate 263 having, A coupling hook 261a is formed at the end of the shower head body 261, and a coupling groove 263a is formed at the end of the bottom plate 263 corresponding to the coupling hook 261a. Vapor deposition apparatus. delete

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