KR20110117417A - Susceptor for chemical vapor deposition apparatus and chemical vapor deposition apparatus having the same - Google Patents

Abstract

Disclosed are a susceptor for a chemical vapor deposition apparatus capable of rotating a satellite disk on which a substrate is mounted and minimizing temperature nonuniformity of the substrate, and a chemical vapor deposition apparatus having the same.
In the susceptor for the chemical vapor deposition apparatus is a susceptor provided in a chemical vapor deposition apparatus for chemically depositing a metal compound on a substrate having a chamber to which a reaction gas is supplied and a heat source for providing heat inside the chamber, A satellite disk having a substrate mounting portion on which the substrate is placed and an edge portion surrounding the substrate mounting portion, the satellite disk having a plurality of pressing grooves at the edge portion; A plurality of pockets on which the satellite disc is placed is formed on an upper surface thereof, and a gas supply passage for supplying a rotating gas to the pressurizing groove for rotating the satellite disc is provided therein and is rotatably disposed in the chamber. It characterized in that it comprises a disk.
According to the susceptor for chemical vapor deposition apparatus, the thickness of the substrate mounting portion on which the substrate is mounted among the satellite disks is uniform, and rotational gas does not flow in the lower portion of the substrate mounting portion, thereby minimizing temperature unevenness of the substrate mounted on the satellite disk. As a result, the performance of the substrate can be improved.

Description

Susceptor for chemical vapor deposition apparatus and chemical vapor deposition apparatus having the same {Susceptor for Chemical Vapor Deposition Apparatus And Chemical Vapor Deposition Apparatus Having the Same}

 The present invention relates to an apparatus for forming a high temperature chemical vapor deposition on a substrate, and more particularly, a susceptor for a chemical vapor deposition apparatus capable of minimizing temperature nonuniformity of a substrate while rotating a satellite disk on which the substrate is mounted. It relates to a chemical vapor deposition apparatus provided.

In general, chemical vapor deposition (CVD) is used as a main method for growing various crystal films on various substrates. Chemical vapor deposition generally has a higher quality of the crystals grown than the liquid phase growth method, but has a disadvantage in that the growth rate of the crystals is relatively slow. To overcome this drawback, a method of simultaneously growing on several substrates in one growth cycle is widely adopted.

Such chemical vapor deposition (CVD) is implemented in various forms, and recently, due to miniaturization of semiconductor devices, development of high efficiency, high power LED, and the like, metal organic chemical vapor deposition (MOCVD) is used in CVD technology. MOCVD refers to a gas phase growth method of a compound semiconductor that deposits and deposits a metal compound on a semiconductor substrate by thermal decomposition of an organic metal.

Meanwhile, FIG. 1 illustrates an example of a chemical vapor deposition apparatus, and the chemical vapor deposition apparatus 10 illustrated in FIG. 1 includes a chamber 11 having a predetermined size of internal space and a rotation within the chamber 11. A susceptor 12 arranged to be capable of being placed on a plurality of substrates 1, a heater 13 disposed below the susceptor 12 to heat the inside of the chamber 11, and the chamber ( And a gas inlet 14 extending from the upper surface of 11 to the upper portion of the susceptor 12. The susceptor 12 includes a main disk 12a constituting a main body and rotating about a central axis, a plurality of pockets 12b recessed on an upper surface of the main disk 12a, and each of the pockets. It comprises a satellite disk (12c) rotatably installed in (12b), the substrate 1 is provided on the upper surface of the satellite disk (12c).

The chemical vapor deposition apparatus 10 includes a source gas and a carrier gas, which are reaction gases, through the gas inlet 14 extending to the vicinity of the upper surface of the susceptor 12. The reaction gas flows into the central region of the upper surface of the substrate), and the incoming reaction gas forms a thin film on the surface of the substrate 1 due to the chemical vapor deposition reaction on the substrate 1 at a high temperature. It is configured to be discharged to the bottom on the wall.

As such, the chemical vapor deposition apparatus 10 includes a radial chemical vapor deposition apparatus 10 and a chamber in which the reaction gas moves radially from the center of the susceptor 12 according to the movement path of the reaction gas. Horizontal chemical vapor deposition device in which the reaction gas flows in the horizontal direction of the, through the plurality of gas inlet formed in the upper portion of the chamber can be divided into a vertical chemical vapor deposition device to move the reaction gas vertically.

On the other hand, the chemical vapor deposition apparatus 10 is the size of the chamber 11 is increased in order to increase the size of the substrate 1 and mass production, thereby the size of the susceptor 12 and the number of mounting of the substrate 1 Will increase.

At this time, one of the characteristics to be considered in the chemical vapor deposition apparatus 10 is to maintain the uniformity of the wavelength acting on each substrate 1, this wavelength uniformity is largely in the shape or structure of the susceptor 12 Can be influenced. That is, even if the temperature of the surface of the susceptor 12 changes only by 1 ° C., the wavelength changes by about 1 to 2 nm. Therefore, it is necessary to have a configuration in which the shape or structure of the susceptor 12 can maintain the temperature uniformly.

Such wavelength uniformity includes the inter-pocket uniformity, which is the uniformity between the substrates 1 provided in the plurality of pockets 12b, and the in-pocket uniformity, which is the uniformity inside the substrate 1, provided in one pocket 12b. Among these, inter-pocket uniformity can be solved by rotating the main disk 12a, but in order to achieve in-pocket uniformity, rotation of each substrate 1 is required, and for this purpose, a satellite disk ( The rotation of 12c) is required. As shown in FIG. 1, the rotation of the main disk 12a can be easily solved by a mechanical method such as rotating the entire main disk 12a about an axis, but it is relatively difficult to rotate the satellite disk 12c.

As described above, a mechanical method or a method using a gas is used to rotate the satellite disk 12c. However, the mechanical method has to implement another rotation inside the rotating main disk 12a. There is a problem that you have.

In view of such a problem of the mechanical rotation method, a rotation method using a gas for the rotation of the satellite disk 12c has been used a lot.

As such, an example of a rotation method of the satellite disk 40 using gas is illustrated in FIGS. 2 and 3.

2 shows a mounting state of one satellite disk 40 on the susceptor 20, the susceptor 20 having a main disk 30 and a seating groove 35 of the main disk 30. And a satellite disk 40 seated on the center pin 31 formed therein and rotated, and the substrate 2 is mounted in the substrate mounting groove 47 formed on the top surface of the satellite disk 40.

2 and 3, the satellite disk 40 has a plurality of spiral grooves 42, 43, 44 formed spirally from the center to the outside thereof, and each of the spiral grooves 42, 43, 44 has a spiral shape. ), The center side 45 is connected to the gas injection port 33 for injecting the rotating gas supplied from the gas supply port 32 of the main disk 30, the respective spiral grooves (42, 43, 44) The outer side 46 is connected to the gas outlet 34 formed in the main disk 30 to discharge the rotating gas flowing through the spiral grooves 42, 43, and 44 to the outside. Therefore, in the satellite disk 40 having the configuration as shown in FIGS. 2 and 3, the rotating gas injected from the gas injection port 33 flows along the spiral grooves 42, 43, and 44 on the lower surface of the satellite disk 40. It is rotated by the generated force.

As such, the susceptor 20 as described above includes a main disk 30 and a satellite disk (located at a portion where the substrate 1 is mounted, that is, a lower portion of the substrate 1) for the rotation of the satellite disk 40. Processing for forming the gas flow path (spiral groove) is required in the portion of 40).

In this case, when the bottom surface of the satellite disk 40 located below the substrate 1 is processed, the thickness d of the portion where the spiral grooves 42, 43, and 44 are formed and the thickness of the portion where the spiral groove is not formed ( The difference occurs in D), which causes the temperature of the portion of the substrate 1 located in the spiral grooves 42, 43, and 44 to be relatively low.

That is, the rotating gas for the rotation of the satellite disk 40 has a temperature lower than the reaction gas, as well as the thickness (D) of the portion where the spiral grooves 42, 43, 44 are formed (D). Since the temperature is lower than), a temperature nonuniformity and a wavelength nonuniformity appear largely in the portion of the substrate 1 positioned above the portion where the rotating gas is moved, which adversely affects the performance of the substrate.

The present invention is to solve at least some of the above problems, and to minimize the temperature non-uniformity of the substrate mounted on the satellite disk, a chemical vapor deposition apparatus susceptor capable of stable deposition on the substrate and a chemical vapor deposition apparatus having the same It aims to provide.

In addition, an object of the present invention is to provide a chemical vapor deposition apparatus and a chemical vapor deposition apparatus having the same, which can stably rotate a satellite disk.

As an aspect for achieving the above object, the present invention is provided with a chemical vapor deposition apparatus for chemically depositing a metal compound on a substrate having a chamber to which a reaction gas is supplied and a heat source for providing heat inside the chamber. A susceptor comprising: a satellite disk having a substrate mounting portion on which the substrate is placed and an edge portion surrounding the substrate mounting portion, the satellite disk having a plurality of pressing grooves at the edge portion; A plurality of pockets on which the satellite disc is placed is formed on an upper surface thereof, and a gas supply passage for supplying a rotating gas to the pressurizing groove for rotating the satellite disc is provided therein and is rotatably disposed in the chamber. It provides a susceptor for chemical vapor deposition apparatus comprising a disk.

Preferably, the pressing groove may be formed at a predetermined interval on the lower surface of the rim portion.

Also preferably, the gas supply passage may have a gas injection passage formed to be inclined toward the rotation direction of the satellite disk when viewed from a tangential cross section of the satellite disk.

In addition, the pressing groove may have a shape inclined toward the rotation direction of the satellite disk when viewed from the tangential cross section of the satellite disk.

Preferably, the main disk may be formed with a plurality of the gas injection passage per one pocket.

In addition, the main disk may include a gas discharge passage for discharging the rotating gas discharged from the gas supply passage to the outside through a gas discharge port located under the edge portion.

In addition, the susceptor for chemical vapor deposition apparatus according to an aspect of the present invention is installed between the lower surface of the satellite disk and the upper surface of the pocket of the main disk so that the satellite disk is rotated to be spaced apart from the upper surface of the pocket. It may further include a rotation support member for supporting the satellite disk.

At this time, the rotation support member may have a wing portion for supporting the central lower surface of the satellite disk.

On the other hand, the present invention as another aspect, the chamber is supplied with the reaction gas; A heat source providing heat to the interior of the chamber; And a susceptor for a chemical vapor deposition apparatus having the above configuration, and providing a chemical vapor deposition apparatus for chemically depositing a metal compound on a substrate placed on the susceptor.

As described above, according to one embodiment of the present invention, the thickness of the substrate mounting portion on which the substrate is mounted among the satellite disks is uniform, and rotational gas does not flow in the lower portion of the substrate mounting portion, thereby minimizing temperature unevenness of the substrate mounted on the satellite disk. As a result, there is an effect that the performance of the crystal film formed on the substrate is improved.

In addition, according to an embodiment of the present invention, by forming a pressing groove in the rim corresponding to the edge of the satellite disk and by spraying the gas for rotation in the pressing groove can be obtained the effect that can give sufficient rotational force to the satellite disk. have. That is, since the position where the rotational force is applied to the satellite disk is the farthest part from the rotation center, a large moment can be given even when the pressure of the rotating gas is small, and a large rotational force can be obtained when the pressure of the rotating gas is the same. Stable rotation of the effect is possible.

And, according to an embodiment of the present invention, by forming a slope in the rotational direction of the satellite disk in the pressurized groove formed in the satellite disk and / or the gas injection flow path formed in the main disk it is possible to sufficiently transmit the rotational force by the rotating gas. Can be obtained.

In addition, according to an embodiment of the present invention, by forming a plurality of gas injection flow paths and / or gas discharge flow paths in one pocket, it is possible to induce stable rotation of the satellite disk, it is possible to smoothly flow the gas for rotation It will work.

In addition, according to an embodiment of the present invention, the satellite disk can be smoothly rotated by the rotation support member supporting the satellite disk so that the satellite disk rotates in a state spaced apart from the upper surface of the pocket of the main disk.

In addition, according to an embodiment of the present invention, by having the rotary support member with a wing portion for supporting the central lower surface of the satellite disk it is possible to minimize the shaking phenomenon during the rotation of the satellite disk.

1 is a schematic view showing a general chemical vapor deposition apparatus.
2 is a schematic diagram of a susceptor of a conventional chemical vapor deposition apparatus using a gas to rotate a satellite disk.
3 is a bottom view of the lower surface of the satellite disk in the susceptor shown in FIG.
Figure 4 is a schematic diagram showing a chemical vapor deposition apparatus according to an embodiment of the present invention.
5 is a plan view of the main disk shown in FIG.
6 is a cross-sectional view taken along line AA of FIG. 5.
FIG. 7 illustrates the satellite disk shown in FIG. 4.
(a) is a top view, (b) is sectional drawing along the BB line of (a), (c) is a bottom view.
8 (a) to 8 (e) are cross-sectional views showing various embodiments of the pressing grooves along the line CC of FIG. 7 (a).
9 (a) and 9 (b) are schematic views showing various embodiments of the fixed support member shown in FIG.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

Figure 4 is a schematic view showing a chemical vapor deposition apparatus according to an embodiment of the present invention, Figure 5 is a plan view of the main disk shown in Figure 4, Figure 6 is a cross-sectional view taken along line AA of Figure 5, Figure 7 4 shows a satellite disk shown in FIG. 4, (a) is a plan view, (b) is a sectional view taken along the line BB of (a), and (c) is a bottom view. 8 (a) to 8 (e) are cross-sectional views showing various embodiments of the pressing grooves along the line CC of FIG. 7 (a), and FIGS. 9 (a) and 9 (b) are FIGS. It is a schematic diagram showing various embodiments of the fixed support member shown in FIG.

Referring to FIG. 4, the chemical vapor deposition apparatus 200 according to an aspect of the present invention has a chamber 210 having a predetermined size of internal space therein and a rotatable inside the chamber 210. A susceptor 100 on which a plurality of substrates 101 are placed, a heat source 230 disposed below the susceptor 100, and a heater to heat the inside of the chamber 210, and the chamber It is configured to include a gas inlet 240 extending from the upper surface of the 210 to the upper portion of the susceptor 100. The susceptor 100 forms a main body, rotates about a central axis, and includes a main disk 110 having a plurality of pockets 115 recessed in an upper surface thereof, and a rotation in each of the pockets 115. It is configured to include a plurality of satellite disk (Satellite disk) 120 is installed, the substrate 101 is installed on the upper surface of the satellite disk (120).

In the chemical vapor deposition apparatus 200, a source gas and a carrier gas, which are reaction gases, are introduced into the central region of the upper surface of the susceptor 100 through the gas inlet 240, and the reaction is introduced. The gas forms a thin film on the surface of the substrate 101 due to the chemical vapor deposition reaction on the substrate 101 of the high temperature, the residual gas or by-products are configured to be discharged to the lower portion on the wall of the chamber 210.

In FIG. 4, the radial chemical vapor deposition apparatus 200 in which the reaction gas moves radially in the center of the susceptor 100 is illustrated and described. However, the chemical vapor deposition apparatus 200 according to the present invention is connected to the susceptor 100. If the satellite disk 110 is configured to rotate is not limited in relation to the shape of the movement path of the reaction gas. For example, in the chemical vapor deposition apparatus 200 according to the present invention, the reaction gas moves vertically through a horizontal chemical vapor deposition apparatus in which the reaction gas flows in the horizontal direction of the chamber, or through a plurality of gas inlets formed in the upper portion of the chamber. It may include various forms such as a vertical chemical vapor deposition apparatus.

5 to 9, it looks at the susceptor 100 provided in the chemical vapor deposition apparatus 200 according to an aspect of the present invention.

As described with reference to Figure 4, the susceptor 100 for chemical vapor deposition apparatus 200 according to an aspect of the present invention, the chamber 210 is supplied with the reaction gas, and the inside of the chamber 210 It is used in the chemical vapor deposition apparatus 200 having a heat source 230 for providing heat to chemically deposit a metal compound on the substrate 101 placed on the susceptor 100.

5 to 9, the susceptor 100 according to an aspect of the present invention includes a satellite disk 120 on which a substrate 101 is placed, and a plurality of pockets 115 on which the satellite disk 120 is placed. ) Is formed on the top surface and includes a main disk 110 rotatably disposed in the chamber 210.

6 and 7, the satellite disk 120 includes a substrate mounting portion 125 on which the substrate 101 is placed, and an edge portion 126 surrounding the outside of the substrate mounting portion 125. Specifically, the satellite disk 120 is formed on the top surface is formed with a substrate mounting portion 125 recessed to the height of the step (125a), the substrate 101 is mounted on the substrate mounting portion 125. In addition, a plurality of pressing grooves 122 are formed in the edge portion 126, and as described below, a gas for rotation flows into the pressing grooves 122 so that the satellite disk 120 and the substrate 101 placed thereon are provided. Rotation will be made.

As shown in FIG. 7, a plurality of the pressing grooves 122 are formed at predetermined intervals on the lower surface of the edge portion 126, and as shown in FIG. 8, a rotational force F is generated by the gas for rotation. .

As shown in FIGS. 7 and 8, the pressing groove 122 has a shape inclined toward the rotational direction of the satellite disk when viewed from a tangential cross section of the satellite disk 120 (see FIG. 8). It is preferable that it is formed to receive sufficient rotational force F by the dedicated gas. To this end, the pressing groove 122 may have a variety of shapes as shown in Figure 8 (a) to 8 (e). In addition, the pressing groove 122 may have a slightly inwardly inclined shape as shown in FIG. 7 (a) to correspond to the direction of the gas injection passage 113 to be described later, but the shape of the pressing groove 122 Is not limited to this.

As such, the moment due to the injection of the rotating gas acts greatly by injecting the rotating gas into the pressure groove 122 formed in the edge portion 126 of the satellite disk 120, thereby providing sufficient rotational force to the satellite disk 120. It can be given.

5 and 6, the main disk 110 includes a plurality of pockets 115 on which a satellite disk 120 is placed, and a satellite disk (not shown) for rotating the satellite disk 120. A gas supply passage 112 for supplying a gas for rotation to the pressure groove 122 formed in the 120 is provided therein.

Specifically, the gas supply passage 112 is connected to the gas inlet passage 119 formed in the center and a plurality of radially installed, the pressing groove 122 formed on the lower surface of the edge portion 126 of the satellite disk 120. The gas for rotation for the rotation of the satellite disk 120 is supplied to. To this end, each gas supply passage 112 is provided with a closed portion (S) at both ends of the main disk 110, the satellite to inject a rotating gas through the gas injection port (113a) in the pressure groove (112). It may be provided with a gas injection passage 113 having an inclination toward the rotation direction of the disk 120.

The gas injection passage 113 is inclined toward the rotation direction (ie, the circumferential direction) of the satellite disk 120 when viewed from the tangential cross section of the satellite disk so that the satellite disk 120 can rotate. It is preferable to form, and the shape is not specifically limited. For example, as shown in FIGS. 5 and 6, the gas injection passage 113 acts so that the action force due to the gas for rotation acts in both the circumferential direction (ie, the rotation direction) and the radial direction of the satellite disk 120. It may be formed, or may be formed so that the action force due to the gas for rotation is applied only in the circumferential direction (ie, rotational direction) of the satellite disk 120.

In addition, in order to provide sufficient rotational force to the satellite disk 120, the main disk 110 preferably has a plurality of gas injection passages 113 per one pocket (115). For example, although two gas injection passages 113 are formed in one pocket 115 in FIG. 5, the number may be changed in various ways.

In addition, the main disk 110 is a gas discharge passage 114 for discharging the rotating gas injected from the gas supply passage 113 to the outside through the gas discharge port 114a located below the edge portion 126. It may be provided. Accordingly, the rotating gas discharged through the gas injection port 113a of the gas injection passage 113 pressurizes the pressing groove 122 formed on the lower surface of the edge portion 125 of the satellite disk 120 to thereby satellite disk 120. ) Is rotated, and the rotating gas is then discharged to the outside through the gas discharge passage 114 formed in the main disk 110. The gas discharge passage 114 may also be formed in plural like the gas supply passage 113 to facilitate the discharge of the gas.

Thus, the susceptor 100 for chemical vapor deposition apparatus according to an aspect of the present invention is uniform because the thickness of the substrate mounting portion 125 to which the substrate 101 is mounted in the satellite disk 120 is possible uniform heat transfer In addition, since the gas for rotation of the satellite disk 120 does not flow in the lower portion of the substrate mounting part 125, the temperature of the substrate 101 may be prevented from being lowered, and the temperature unevenness and the wavelength unevenness of the substrate in the pocket may be minimized. In this way, there is an effect that a substrate having improved performance can be manufactured.

Meanwhile, referring to FIGS. 6 and 9, the susceptor 100 according to an aspect of the present invention is installed between the lower surface of the satellite disk 120 and the upper surface of the pocket 115 of the main disk 110. It may further include a rotation supporting member 130. The rotation support member 130 supports the satellite disk 120 so that the satellite disk 120 rotates to be spaced apart from the top surface of the pocket 115 so that the satellite disk 120 can rotate smoothly.

Specifically, as shown in Figure 9 (a), the rotation support member 130, one end is fixed to the fixing groove 117 formed in the center of the upper surface of the pocket 115 of the main disk 110, the other end is a satellite The satellite disk 120 is rotatably inserted into the support groove 121 formed at the center of the lower surface of the disk 120 so that the satellite disk 120 is rotated while being spaced apart from the top of the pocket 115 of the main disk 110. can do.

At this time, as shown in Figure 9 (b), the rotation support member 130 is a wing portion 132 to widely support the central lower surface of the satellite disk 120 to prevent shaking during the rotation of the satellite disk 120. ) May be provided. As an example, the wing 132 may have a disk shape extending outward from the central axis 131.

While the invention has been shown and described with respect to particular embodiments, it will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention as set forth in the claims below. I want to make it clear.

101 ... substrate 100 ... susceptor
110 ... main disk 112 ... gas supply flow path
113.Gas injection path 113a ... Gas injection port
114 gas outlet 114a gas outlet
115 ... Pocket 120 ... Satellite Disc
121 ... support groove 122 ... pressurization groove
125 ... PCB Mount 126 ... Edge
130 ... rotating support member 131 ... wing
200 ... Chemical Vapor Deposition System 210 ... Chamber
230 ... heat source 240 ... gas inlet

Claims (9)

A susceptor provided in a chemical vapor deposition apparatus having a chamber to which a reaction gas is supplied and a heat source for providing heat inside the chamber to chemically deposit a metal compound on a substrate.
A satellite disk having a substrate mounting portion on which the substrate is placed and an edge portion surrounding the substrate mounting portion, the satellite disk having a plurality of pressing grooves at the edge portion;
A plurality of pockets on which the satellite disc is placed is formed on an upper surface thereof, and a gas supply passage for supplying a rotating gas to the pressurizing groove for rotating the satellite disc is provided therein and is rotatably disposed in the chamber. disk;
Susceptor for chemical vapor deposition apparatus comprising a. The method of claim 1,
The pressing groove is a chemical vapor deposition apparatus susceptor, characterized in that formed on the lower surface of the rim at a predetermined interval. The method of claim 1,
And said gas supply flow passage has a gas injection flow passage formed inclined toward the rotation direction of said satellite disk when viewed from a tangential cross section of said satellite disk. The method of claim 2,
The pressing groove has a susceptor for a chemical vapor deposition apparatus, characterized in that it has a shape inclined toward the rotation direction of the satellite disk when viewed from the tangential cross section of the satellite disk. The method of claim 3,
The main disk is a susceptor for chemical vapor deposition apparatus, characterized in that a plurality of the gas injection passage is formed per one pocket. The method of claim 1,
The main disk susceptor for chemical vapor deposition apparatus comprising a gas discharge passage for discharging the rotating gas discharged from the gas supply passage to the outside through a gas discharge port located in the lower portion of the rim. The method of claim 1,
And a rotation support member installed between a lower surface of the satellite disk and an upper surface of the pocket of the main disk to support the satellite disk so that the satellite disk rotates while being spaced apart from the upper surface of the pocket. Susceptor for chemical vapor deposition apparatus. The method of claim 7, wherein
The rotation support member susceptor for chemical vapor deposition apparatus characterized in that it comprises a wing for supporting the central lower surface of the satellite disk. A chamber through which a reaction gas is supplied;
A heat source providing heat to the interior of the chamber; And
A susceptor according to any one of claims 1 to 8;
Chemical vapor deposition apparatus for chemically depositing a metal compound on a substrate placed on the susceptor including.

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