CN110760820A - Gas suspension device in vapor deposition furnace - Google Patents
Gas suspension device in vapor deposition furnace Download PDFInfo
- Publication number
- CN110760820A CN110760820A CN201911233422.2A CN201911233422A CN110760820A CN 110760820 A CN110760820 A CN 110760820A CN 201911233422 A CN201911233422 A CN 201911233422A CN 110760820 A CN110760820 A CN 110760820A
- Authority
- CN
- China
- Prior art keywords
- hole
- gas
- air
- air outlet
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
Abstract
The invention provides a gas suspension device in a vapor deposition furnace, which comprises a graphite disc and a base which are arranged in parallel and are matched in a rotating manner, wherein the base is provided with a main gas inlet hole, a first gas distribution hole, a second gas distribution hole, a first inclined gas outlet hole and a second inclined gas outlet hole, the first gas distribution hole and the second gas distribution hole are respectively positioned at two sides of the main gas inlet hole, and the first gas distribution hole and the second gas distribution hole are respectively intersected and communicated with the main gas inlet hole at the same point. The invention has the beneficial effects that: the first gas distribution hole and the second gas distribution hole are distributed at the same position of the main gas inlet hole, and then the first inclined gas outlet hole and the second inclined gas outlet hole respectively generate rotary gas to push the graphite plate to suspend and rotate, so that the consistency of gas flow resistance is ensured, the two inclined gas flows are effectively ensured to be the same, the suspension effect is good, the rotation is smooth, the uniformity and the quality of the film can be obviously improved, and the service cycle of the device is effectively prolonged.
Description
Technical Field
The invention relates to a vapor deposition furnace, in particular to a gas suspension device in the vapor deposition furnace.
Background
The basic principles of vapor deposition relate to reaction chemistry, thermodynamics, kinetics, transfer mechanisms, film growth phenomena, and reaction engineering. The vapor of metal vapor, volatile metal halide, hydride or metal organic compound is used as material to produce gas phase thermal decomposition reaction and the reaction of two or more simple substances or compounds, and the condensation is carried out to produce various forms of material. In the chemical vapor deposition process, the uniformity of the deposited film is extremely important, and the uniformity of the film is mainly influenced by the gas distribution in the furnace. The chemical vapor deposition process is a very complicated chemical process, and whether the gas is uniformly distributed or not can greatly affect the deposition rate of the process, the compactness of a film layer, the uniformity of the film and the like. Generally speaking, the uniformity of chemical vapor deposition is difficult to guarantee due to the influence of process factors such as gas flow field, and the like, and a graphite disc rotating device is generally adopted to improve the uniformity of a coating, so that the aim of stable production can be achieved.
Graphite plate rotary device of prior art includes graphite plate and base usually, main gas passage and two slope gas pocket lug connection in the base for produce rotatory gaseous pushing graphite plate suspension and rotate, slope gas pocket one is in the front, one is after, the resistance of gas pocket is little than the resistance of back gas pocket before the flow through, so the gas that flows through preceding gas pocket is many, preceding gas pocket receives process gas's corruption also big, lead to preceding gas pocket aperture grow to influence gas flow homogeneity, thereby influence the normal suspension and the rotation of graphite plate easily, lead to the device inefficacy.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a gas suspension device in a vapor deposition furnace.
The invention provides a gas suspension device in a vapor deposition furnace, which comprises a graphite disc and a base which are arranged in parallel and are matched in a rotating manner, wherein the base is provided with a main gas inlet hole, a first gas distribution hole, a second gas distribution hole, a first inclined gas outlet hole and a second inclined gas outlet hole, the first gas distribution hole and the second gas distribution hole are respectively positioned at two sides of the main gas inlet hole, the first gas distribution hole and the second gas distribution hole are respectively communicated with the main gas inlet hole at the same point in an intersecting manner, the first gas distribution hole is connected with the first inclined gas outlet hole, the second gas distribution hole is connected with the second inclined gas outlet hole, the main gas inlet hole, the first gas distribution hole and the first inclined gas outlet hole are communicated to form a first gas passage, the main gas inlet hole, the second gas distribution hole and the second inclined gas outlet hole are communicated to form a second gas passage, and the first gas passage, and pushing the graphite disc to suspend and rotate.
As a further improvement of the present invention, the axes of the first air dividing hole and the second air dividing hole coincide with each other, and the first air dividing hole and the second air dividing hole are perpendicular to the main air inlet hole respectively.
As a further improvement of the invention, the axes of the main air inlet hole, the first air dividing hole and the second air dividing hole are all parallel to the horizontal plane, and the axes of the first inclined air outlet hole and the second inclined air outlet hole form an acute angle with the horizontal plane.
As a further improvement of the invention, the first inclined air outlet and the second inclined air outlet are symmetrically arranged.
As a further improvement of the invention, the surfaces of the first inclined air outlet and the second inclined air outlet are covered with silicon carbide coatings.
As a further improvement of the invention, the pedestal is provided with a rotating shaft, the graphite plate is provided with a rotating hole, and the rotating shaft is arranged in the rotating hole.
As a further improvement of the invention, the base is provided with an air passage insert, the first air dividing hole, the second air dividing hole, the first inclined air outlet hole and the second inclined air outlet hole are all located in the air passage insert, and the base and the air passage insert are in sealing fit.
As a further improvement of the invention, a rotary gas tank corresponding to the first inclined gas outlet and the second inclined gas outlet is arranged on the bottom surface of the graphite plate attached to the base, and inclined gas emitted from the first inclined gas outlet and the second inclined gas outlet enters the rotary gas tank to generate rotary gas to push the graphite plate to suspend and rotate.
As a further improvement of the invention, the plurality of the rotating gas grooves are uniformly arranged along the circumferential direction of the graphite disc at intervals, the rotating gas grooves extend outwards from the center of the graphite disc, and the rotating gas grooves and the radial direction of the graphite disc form an acute angle.
The invention has the beneficial effects that: through above-mentioned scheme, divide first minute gas pocket, second minute gas pocket in the same position of main inlet port, the rethread produces rotatory gas through first slope venthole, second slope venthole respectively, promotes the graphite plate suspension and rotates, has guaranteed that the gas flow resistance is unanimous, has effectively guaranteed that two slope gas flow are the same, and the suspension is effectual, and is rotatory smooth and easy, can show improvement film homogeneity and quality to effective extension fixture's life cycle.
Drawings
FIG. 1 is a schematic view of a gas suspension apparatus in a vapor deposition furnace according to the present invention.
FIG. 2 is a schematic view of a base of a gas suspension apparatus in a vapor deposition furnace according to the present invention.
FIG. 3 is a schematic cross-sectional view of a graphite plate of a gas suspension apparatus in a vapor deposition furnace according to the present invention.
FIG. 4 is a schematic sectional view of a base of a gas levitation apparatus in a vapor deposition furnace according to the present invention.
Detailed Description
The invention is further described with reference to the following description and embodiments in conjunction with the accompanying drawings.
As shown in fig. 1 to 4, a gas suspension device in a vapor deposition furnace comprises a graphite disc 2 and a base 1 which are arranged in parallel and are matched in a rotating manner, wherein a main gas inlet hole 12, a first gas distribution hole 13, a second gas distribution hole 14, a first inclined gas outlet hole 15 and a second inclined gas outlet hole 16 are arranged on the base 1, the first gas distribution hole 13 and the second gas distribution hole 14 are respectively positioned at two sides of the main gas inlet hole 12, the first gas distribution hole 13 and the second gas distribution hole 14 are respectively intersected and communicated with the main gas inlet hole 12 at the same point, the first gas distribution hole 13 is connected with the first inclined gas outlet hole 15, the second gas distribution hole 14 is connected with the second inclined gas outlet hole 16, the main gas inlet hole 12, the first gas distribution hole 13 and the first inclined gas outlet hole 15 are communicated to form a first gas passage, the main gas inlet hole 12, the second gas distribution hole 14 and the second inclined gas outlet hole 16 are communicated to, the first air passage and the second air passage are used for generating rotary gas to push the graphite disc 2 to suspend and rotate.
As shown in fig. 1 to 4, the axes of the first air dividing hole 13 and the second air dividing hole 14 are coincident, the first air dividing hole 13 and the second air dividing hole 14 are respectively perpendicular to the main air inlet hole 12 and are distributed in a cross shape, that is, the first air dividing hole 13 and the second air dividing hole 14 are arranged in a transverse direction, and the main air inlet hole 12 is arranged in a longitudinal direction.
As shown in fig. 1 to 4, the axes of the main air inlet hole 12, the first sub air outlet hole 13 and the second sub air outlet hole 14 are all parallel to the horizontal plane, and the axes of the first inclined air outlet hole 15 and the second inclined air outlet hole 16 are all at an acute angle with the horizontal plane.
As shown in fig. 1 to 4, the first inclined outlet holes 15 and the second inclined outlet holes 16 are symmetrically arranged.
As shown in fig. 1 to 4, the surfaces of the first inclined gas outlet 15 and the second inclined gas outlet 16 are covered with a silicon carbide coating, which can protect the gas holes from being corroded by the process gas to affect the suspension and rotation of the graphite disc 2.
As shown in fig. 1 to 4, a rotating shaft 11 is arranged on the base 1, a rotating hole 21 is arranged on the graphite plate 2, the rotating shaft 11 is arranged in the rotating hole 21, and the base 1 and the graphite plate 2 are rotatably connected through the rotating shaft 11 and the rotating hole 21.
As shown in fig. 1 to 4, an air passage insert 17 is arranged on the base 1, the first air dividing hole 13, the second air dividing hole 14, the first inclined air outlet hole 15 and the second inclined air outlet hole 16 are all located in the air passage insert 17, a square hole and a positioning step are formed in the base 1 and used for installing the air passage insert 17, the air passage insert 17 is assembled on the base 1 through precision machining, and the base 1 and the air passage insert 17 are in precision sealing fit to prevent process gas from leaking.
As shown in fig. 1 to 4, the size of the airway insert 17 of the present invention is determined according to the size of the graphite disc 2, the size is 50-150mm, the aperture size of the first air dividing hole 13 and the second air dividing hole 14 inside is 5-15mm, and the aperture size of the first inclined air outlet hole 15 and the aperture size of the second inclined air outlet hole 16 are 1-8 mm.
As shown in fig. 1 to 4, a rotary air groove 22 corresponding to the first inclined air outlet 15 and the second inclined air outlet 16 is arranged on the bottom surface of the base 1 to which the graphite plate 2 is attached, and inclined air emitted from the first inclined air outlet 15 and the second inclined air outlet 16 enters the rotary air groove 22 to generate rotary air, so that the graphite plate 2 is pushed to suspend and rotate.
As shown in fig. 1 to 4, the plurality of the rotating gas grooves 22 are uniformly arranged at intervals along the circumferential direction of the graphite disc 2, the rotating gas grooves 22 extend outward from the center of the graphite disc 2, and the rotating gas grooves 22 form an acute angle with the radial direction of the graphite disc 2.
According to the gas suspension device in the vapor deposition furnace, the first gas distributing hole 13 and the second gas distributing hole 14 are distributed at the same position of the main gas inlet hole 12, and then the rotating gas is generated through the first inclined gas outlet hole 15 and the second inclined gas outlet hole 16 respectively to push the graphite disc 2 to suspend and rotate, so that the consistency of gas flow resistance is ensured, the two inclined gas flows are effectively ensured to be the same, the suspension effect is good, the rotation is smooth, the uniformity and the quality of a film can be remarkably improved, and the service cycle of the device is effectively prolonged.
The gas suspension device in the vapor deposition furnace provided by the invention is simple and reasonable in design, the uniformity of a film deposited on a substrate is effectively improved, the service life of the suspension device is prolonged, the loss of manpower and material resources can be effectively reduced, the cost is reduced, and the yield is improved.
The foregoing is a more detailed description of the invention in connection with specific preferred embodiments and it is not intended that the invention be limited to these specific details. For those skilled in the art to which the invention pertains, several simple deductions or substitutions can be made without departing from the spirit of the invention, and all shall be considered as belonging to the protection scope of the invention.
Claims (8)
1. The utility model provides a gaseous suspending device in vapour deposition stove, includes parallel arrangement and rotation fit's graphite dish and base, its characterized in that: the base is provided with a main air inlet hole, a first air distribution hole, a second air distribution hole, a first inclined air outlet hole and a second inclined air outlet hole, the first air distribution hole and the second air distribution hole are respectively located on two sides of the main air inlet hole, the first air distribution hole and the second air distribution hole are respectively communicated with the main air inlet hole in an intersecting mode at the same point, the first air distribution hole is connected with the first inclined air outlet hole, the second air distribution hole is connected with the second inclined air outlet hole, the main air inlet hole, the first air distribution hole and the first inclined air outlet hole are communicated to form a first air passage, the main air inlet hole, the second air distribution hole and the second inclined air outlet hole are communicated to form a second air passage, and the first air passage and the second air passage are used for generating rotary gas to push the graphite plate to suspend.
2. The gas suspension apparatus in a vapor deposition furnace according to claim 1, wherein: the axes of the first air distributing hole and the second air distributing hole are overlapped, and the first air distributing hole and the second air distributing hole are respectively vertical to the main air inlet hole.
3. The gas suspension apparatus in a vapor deposition furnace according to claim 1, wherein: the axes of the main air inlet hole, the first air dividing hole and the second air dividing hole are all parallel to the horizontal plane, and the axes of the first inclined air outlet hole and the second inclined air outlet hole form an acute angle with the horizontal plane.
4. The gas suspension apparatus in a vapor deposition furnace according to claim 1, wherein: the first inclined air outlet and the second inclined air outlet are symmetrically arranged.
5. The gas suspension apparatus in a vapor deposition furnace according to claim 1, wherein: the surfaces of the first inclined air outlet and the second inclined air outlet are covered with silicon carbide coatings.
6. The gas suspension apparatus in a vapor deposition furnace according to claim 1, wherein: the air passage insert is arranged on the base, the first air distribution hole, the second air distribution hole, the first inclined air outlet hole and the second inclined air outlet hole are all located in the air passage insert, and the base is in sealing fit with the air passage insert.
7. The gas suspension apparatus in a vapor deposition furnace according to claim 1, wherein: graphite plate laminating be equipped with on the bottom surface of base with the corresponding rotatory gas tank of first slope venthole, second slope venthole, the gaseous entering of slope that first slope venthole, second slope venthole jetted out rotatory gas tank produces rotatory gas, promotes graphite plate suspension and rotation.
8. The gas suspension apparatus in a vapor deposition furnace according to claim 7, wherein: rotatory gas tank has the multichannel and follows the circumference interval of graphite dish evenly sets up, rotatory gas tank certainly the center of graphite dish outwards extends, rotatory gas tank with the radial acute angle that is of graphite dish.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911233422.2A CN110760820A (en) | 2019-12-05 | 2019-12-05 | Gas suspension device in vapor deposition furnace |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911233422.2A CN110760820A (en) | 2019-12-05 | 2019-12-05 | Gas suspension device in vapor deposition furnace |
Publications (1)
Publication Number | Publication Date |
---|---|
CN110760820A true CN110760820A (en) | 2020-02-07 |
Family
ID=69340938
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201911233422.2A Pending CN110760820A (en) | 2019-12-05 | 2019-12-05 | Gas suspension device in vapor deposition furnace |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN110760820A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115537919A (en) * | 2022-11-01 | 2022-12-30 | 江苏汉印机电科技股份有限公司 | High-temperature gas suspension rotating mechanism |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4860687A (en) * | 1986-03-21 | 1989-08-29 | U.S. Philips Corporation | Device comprising a flat susceptor rotating parallel to a reference surface about a shift perpendicular to this surface |
US20060054091A1 (en) * | 2002-12-10 | 2006-03-16 | Natale Speciale | Support system for a treatment apparatus |
KR20110117417A (en) * | 2010-04-21 | 2011-10-27 | 삼성엘이디 주식회사 | Susceptor for chemical vapor deposition apparatus and chemical vapor deposition apparatus having the same |
CN106435719A (en) * | 2016-12-21 | 2017-02-22 | 东莞市天域半导体科技有限公司 | SiC epitaxial growth master disk structure with satellite disks auto-rotating |
CN211079325U (en) * | 2019-12-05 | 2020-07-24 | 深圳市志橙半导体材料有限公司 | Gas suspension device in vapor deposition furnace |
-
2019
- 2019-12-05 CN CN201911233422.2A patent/CN110760820A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4860687A (en) * | 1986-03-21 | 1989-08-29 | U.S. Philips Corporation | Device comprising a flat susceptor rotating parallel to a reference surface about a shift perpendicular to this surface |
US20060054091A1 (en) * | 2002-12-10 | 2006-03-16 | Natale Speciale | Support system for a treatment apparatus |
KR20110117417A (en) * | 2010-04-21 | 2011-10-27 | 삼성엘이디 주식회사 | Susceptor for chemical vapor deposition apparatus and chemical vapor deposition apparatus having the same |
CN106435719A (en) * | 2016-12-21 | 2017-02-22 | 东莞市天域半导体科技有限公司 | SiC epitaxial growth master disk structure with satellite disks auto-rotating |
CN211079325U (en) * | 2019-12-05 | 2020-07-24 | 深圳市志橙半导体材料有限公司 | Gas suspension device in vapor deposition furnace |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115537919A (en) * | 2022-11-01 | 2022-12-30 | 江苏汉印机电科技股份有限公司 | High-temperature gas suspension rotating mechanism |
CN115537919B (en) * | 2022-11-01 | 2024-01-19 | 江苏汉印机电科技股份有限公司 | High-temperature gas suspension rotating mechanism |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105493230B (en) | Hot wall reactor with cooling vacuum obturator | |
JP5544669B2 (en) | Gas injection unit and thin film deposition apparatus and method using the same | |
US8778079B2 (en) | Chemical vapor deposition reactor | |
TW201439369A (en) | Atmospheric lid with rigid plate for carousel processing chambers | |
JP2016184734A (en) | Chamber components for epitaxial growth apparatus | |
CN105369348B (en) | A kind of wafer carrier for MOCVD reaction systems | |
CN211079325U (en) | Gas suspension device in vapor deposition furnace | |
CN110760820A (en) | Gas suspension device in vapor deposition furnace | |
US11680316B2 (en) | Deposition apparatus | |
CN113818011B (en) | Chemical vapor deposition reaction equipment | |
CN110241401A (en) | Chemical vapor deposition optimizes chamber | |
CN103243311A (en) | Gas transport reaction chamber with orthogonal perpendicular inlet gas/horizontal inlet gas on substrate surface | |
CN103748663A (en) | Mocvd apparatus | |
CN113383110A (en) | Susceptor for CVD reactor | |
KR20110117417A (en) | Susceptor for chemical vapor deposition apparatus and chemical vapor deposition apparatus having the same | |
CN105580127A (en) | Heater member and substrate processing apparatus having same | |
CN214655215U (en) | Thin outer diameter magnetic control rotary cathode | |
CN213925010U (en) | Rotating device with labyrinth seal structure | |
CN103774120A (en) | Gas uniformizing device for PECVD (Plasma Enhanced Chemical Vapor Deposition) system | |
US20220259737A1 (en) | Gas-inlet element for a cvd reactor | |
CN210974871U (en) | Photovoltaic cell coating reaction furnace | |
CN206052143U (en) | Long handle Tool PVD coating processes universal bracket | |
CN220265834U (en) | Gas suspension device for vapor deposition furnace | |
CN206316971U (en) | Angle-inserting type spin coating fixture | |
CN205635849U (en) | Top cap dismantled of epitaxial furnace reacting chamber |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination |